Patents by Inventor Yi-Ping Kuo
Yi-Ping Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11968556Abstract: A network quality measurement method and system are provided. In the method, a movement path and a movement speed of a vehicle device are determined according to a size of a space and an endurance time of the vehicle device, and the vehicle device is controlled to move on the movement path at the movement speed. During a movement of the vehicle device, a network quality in the space is measured according to a measurement frequency to generate network quality data. Whether the network quality in the space is changed is determined according to the network quality data. Whether there is an obstacle around the vehicle device is detected. When it is determined that the network quality in the space is changed or the obstacle is detected around the vehicle device, at least one of the movement path, the movement speed, and the measurement frequency is adjusted.Type: GrantFiled: December 26, 2021Date of Patent: April 23, 2024Assignee: Industrial Technology Research InstituteInventors: Hui-Ping Kuo, Sheng-Chieh Huang, Hsin-Hui Hwang, Yi-Ming Wu, Man Ju Chien
-
Patent number: 11936238Abstract: An uninterruptible power apparatus is coupled between a power grid and a load. The uninterruptible power apparatus includes a bypass path, a power conversion module, and a control module. The bypass path is coupled to the power grid through a grid terminal, and coupled to the load through a load terminal. The control module turns off a first thyristor and a second thyristor by injecting a second voltage into the load terminal during a forced commutation period. The control module calculates a magnetic flux offset amount based on an error amount between the second voltage and a voltage command, and provides a compensation command in response to the magnetic flux offset amount. The control module controls the DC/AC conversion circuit to provide a third voltage to the load terminal based on the compensation command and the voltage command.Type: GrantFiled: June 15, 2022Date of Patent: March 19, 2024Assignee: DELTA ELECTRONICS, INC.Inventors: Hsin-Chih Chen, Hung-Chieh Lin, Chao-Lung Kuo, Yi-Ping Hsieh, Chien-Shien Lee
-
Patent number: 11887660Abstract: The present invention provides a pseudo dual-port memory. The pseudo dual-port memory includes a single-port memory, a multiplexer, a timing control circuit and an output circuit. The multiplexer is configured to sequentially output a first address and a second address to the single-port memory. The output circuit is configured to receive output data from the single-port memory to generate a first reading result corresponding to the first address and a second reading result corresponding to the second address. The output circuit includes a first sense amplifier and a second sense amplifier, wherein the first sense amplifier receives the output data to generate first data serving as the first reading result according to a first control signal, and the second sense amplifier receives the output data to generate second data serving as the second reading result according to a second control signal.Type: GrantFiled: August 24, 2022Date of Patent: January 30, 2024Assignee: MEDIATEK INC.Inventors: Yi-Ping Kuo, Yi-Te Chiu
-
Patent number: 11880607Abstract: A self-repair memory circuit includes a cell array, a controller, a row repair decoder, and a column repair decoder. The cell array includes rows and columns of memory cells. The controller receives an input indicating row repair or column repair, and a repair address shared by the row repair and the column repair of the cell array. The row repair decoder maps the repair address of a defective row to a redundant row of the cell array when the input indicates the row repair. The column repair decoder maps the repair address of a defective column to another column of the cell array when the input indicates the column repair.Type: GrantFiled: November 17, 2021Date of Patent: January 23, 2024Assignee: MEDIATEK SINGAPORE PTE. LTD.Inventors: Kim Soon Jway, Shu-Lin Lai, Yi-Ping Kuo
-
Patent number: 11676657Abstract: The present invention provides a pseudo dual-port memory. The pseudo dual-port memory includes a single-port memory, a multiplexer, a timing control circuit and an output circuit. The multiplexer is configured to sequentially output a first address and a second address to the single-port memory. The output circuit is configured to receive output data from the single-port memory to generate a first reading result corresponding to the first address and a second reading result corresponding to the second address. The output circuit includes a first sense amplifier and a second sense amplifier, wherein the first sense amplifier receives the output data to generate first data serving as the first reading result according to a first control signal, and the second sense amplifier receives the output data to generate second data serving as the second reading result according to a second control signal.Type: GrantFiled: March 24, 2021Date of Patent: June 13, 2023Assignee: MEDIATEK INC.Inventors: Yi-Ping Kuo, Yi-Te Chiu
-
Publication number: 20220406373Abstract: The present invention provides a pseudo dual-port memory. The pseudo dual-port memory includes a single-port memory, a multiplexer, a timing control circuit and an output circuit. The multiplexer is configured to sequentially output a first address and a second address to the single-port memory. The output circuit is configured to receive output data from the single-port memory to generate a first reading result corresponding to the first address and a second reading result corresponding to the second address. The output circuit includes a first sense amplifier and a second sense amplifier, wherein the first sense amplifier receives the output data to generate first data serving as the first reading result according to a first control signal, and the second sense amplifier receives the output data to generate second data serving as the second reading result according to a second control signal.Type: ApplicationFiled: August 24, 2022Publication date: December 22, 2022Applicant: MEDIATEK INC.Inventors: Yi-Ping Kuo, Yi-Te Chiu
-
Publication number: 20220171543Abstract: A self-repair memory circuit includes a cell array, a controller, a row repair decoder, and a column repair decoder. The cell array includes rows and columns of memory cells. The controller receives an input indicating row repair or column repair, and a repair address shared by the row repair and the column repair of the cell array. The row repair decoder maps the repair address of a defective row to a redundant row of the cell array when the input indicates the row repair. The column repair decoder maps the repair address of a defective column to another column of the cell array when the input indicates the column repair.Type: ApplicationFiled: November 17, 2021Publication date: June 2, 2022Inventors: Kim Soon Jway, Shu-Lin Lai, Yi-Ping Kuo
-
Publication number: 20210327500Abstract: The present invention provides a pseudo dual-port memory. The pseudo dual-port memory includes a single-port memory, a multiplexer, a timing control circuit and an output circuit. The multiplexer is configured to sequentially output a first address and a second address to the single-port memory. The output circuit is configured to receive output data from the single-port memory to generate a first reading result corresponding to the first address and a second reading result corresponding to the second address. The output circuit includes a first sense amplifier and a second sense amplifier, wherein the first sense amplifier receives the output data to generate first data serving as the first reading result according to a first control signal, and the second sense amplifier receives the output data to generate second data serving as the second reading result according to a second control signal.Type: ApplicationFiled: March 24, 2021Publication date: October 21, 2021Inventors: Yi-Ping Kuo, Yi-Te Chiu
-
Patent number: 10176853Abstract: A pre-processing circuit is used for pre-processing a data-line voltage representative of a data output of a memory device. The pre-processing circuit includes a pre-charging circuit and a clamping circuit. The pre-charging circuit pre-charges a data line to adjust the data-line voltage at the data line that is coupled to the memory device. The clamping circuit clamps the data-line voltage to generate a clamped data-line voltage when the data-line voltage is pre-charged to a level that enables a clamping function of the clamping circuit, wherein the clamped data-line voltage is lower than a supply voltage of the pre-processing circuit. The clamping circuit includes a feedback circuit that feeds back a control voltage according to the data-line voltage at the data line, and further reduces its direct current (DC) leakage when the data-line voltage is clamped, wherein the clamping function of the clamping circuit is controlled by the control voltage.Type: GrantFiled: April 27, 2017Date of Patent: January 8, 2019Assignee: MEDIATEK INC.Inventors: Chi-Hao Hong, Dao-Ping Wang, Yi-Wei Chen, Yi-Ping Kuo, Shu-Lin Lai
-
Publication number: 20170345469Abstract: A pre-processing circuit is used for pre-processing a data-line voltage representative of a data output of a memory device. The pre-processing circuit includes a pre-charging circuit and a clamping circuit. The pre-charging circuit pre-charges a data line to adjust the data-line voltage at the data line that is coupled to the memory device. The clamping circuit clamps the data-line voltage to generate a clamped data-line voltage when the data-line voltage is pre-charged to a level that enables a clamping function of the clamping circuit, wherein the clamped data-line voltage is lower than a supply voltage of the pre-processing circuit. The clamping circuit includes a feedback circuit that feeds back a control voltage according to the data-line voltage at the data line, and further reduces its direct current (DC) leakage when the data-line voltage is clamped, wherein the clamping function of the clamping circuit is controlled by the control voltage.Type: ApplicationFiled: April 27, 2017Publication date: November 30, 2017Inventors: Chi-Hao Hong, Dao-Ping Wang, Yi-Wei Chen, Yi-Ping Kuo, Shu-Lin Lai