Abstract: This invention pertains to the discovery of mutant phytochromes that when introduced into a plant alter the photomorphogenic properties of that plant. In certain embodiments transfection of plants by nucleic acid constructs expressing the mutant phytochromes produced plants having a phenotype characterized by light-independent’ activation. Thus, in certain embodiments, this invention provides a transgenic plant or plant cell comprising a mutant phytochrome where the mutant phytochrome is a light-stable phytochrome; and the transgenic plant shows decreased shade avoidance as compared to the same species or strain of plant lacking the mutant phytochrome. In various embodiments the mutant phytochrome comprises a mutation at the position corresponding to tyrosine residue 276 in an Arabidopsis phytochrome where the mutation is to a residue other than tyrosine.

Abstract: This invention pertains to the discovery of mutant phytochromes that when introduced into a plant alter the photomorphogenic properties of that plant. In certain embodiments transfection of plants by nucleic acid constructs expressing the mutant phytochromes produced plants having a phenotype characterized by light-independent’ activation. Thus, in certain embodiments, this invention provides a transgenic plant or plant cell comprising a mutant phytochrome where the mutant phytochrome is a light-stable phytochrome; and the transgenic plant shows decreased shade avoidance as compared to the same species or strain of plant lacking the mutant phytochrome. In various embodiments the mutant phytochrome comprises a mutation at the position corresponding to tyrosine residue 276 in an Arabidopsis phytochrome where the mutation is to a residue other than tyrosine.

Abstract: This invention pertains to the discovery of mutant phytochromes that when introduced into a plant alter the photomorphogenic properties of that plant. In certain embodiments transfection of plants by nucleic acid constructs expressing the mutant phytochromes produced plants having a phenotype characterized by light-independent activation. Thus, in certain embodiments, this invention provides a transgenic plant or plant cell comprising a mutant phytochrome where the mutant phytochrome is a light-stable phytochrome; and the transgenic plant shows decreased shade avoidance as compared to the same species or strain of plant lacking the mutant phytochrome. In various embodiments the mutant phytochrome comprises a mutation at the position corresponding to tyrosine residue 276 in an Arabidopsis phytochrome where the mutation is to a residue other than tyrosine.

Abstract: This invention pertains to the discovery of mutant phytochromes that when introduced into a plant alter the photomorphogenic properties of that plant. In certain embodiments transfection of plants by nucleic acid constructs expressing the mutant phytochromes produced plants having a phenotype characterized by light-independent activation. Thus, in certain embodiments, this invention provides a transgenic plant or plant cell comprising a mutant phytochrome where the mutant phytochrome is a light-stable phytochrome; and the transgenic plant shows decreased shade avoidance as compared to the same species or strain of plant lacking the mutant phytochrome. In various embodiments the mutant phytochrome comprises a mutation at the position corresponding to tyrosine residue 276 in an Arabidopsis phytochrome where the mutation is to a residue other than tyrosine.

Abstract: A method of using nanoparticles to fabricate an emitting layer of an optical communication light source on a substrate is proposed, in which a host capable of reacting with unstable ions on the surface of a rare earth ions nanomaterial is used as a carrier of nanoparticles to make the rare earth ions nanomaterial release rare earth ions, thereby forming an emitting layer that can be excited by an external current or light source to emit light.

Abstract: Disclosed is a method of increasing the tunable range of wavelength of a semiconductor laser by rearranging the configuration of the semiconductor laser and the semiconductor laser formed thereby. Such method uses a specific arrangement of quantum well structures to minimize the diversity between the electron distribution and the hole distribution within the quantum well structures, and a uniform carrier distribution can be obtained within the quantum well structures. Accordingly, each quantum well structure is able to receive carrier and a better luminescent bandwidth can be produced, and the tunable range of wavelength of the semiconductor laser can be extended to a wide extent. Such method is quite convenient for testing semiconductor laser device. Furthermore, such method can also be applied in an optical communication system to replace other versatile components, and thus reduce the cost necessary for system integration.

Abstract: A high-power semiconductor laser is mainly a light-emitting semiconductor comprising a waveguide structure. The waveguide structure is provided with a plurality of waveguides capable of transmitting light wave, in which a reflective surface for reflecting light wave is formed on a boundary defined by the waveguide and the light-emitting semiconductor unit. A cleaved facet of the light-emitting semiconductor unit has a plurality of interfaces, which are formed by extending the waveguide to reach the cleaved facet of the light-emitting semiconductor unit. The interfaces are provided for either reflecting or transmitting light wave, in which at least a interface would serve for a light-transmitting mechanism. The output power of the present invention could be heightened up to 2 W with an even intensity distribution for a close field without bringing about any catastrophic optical damage (COD).