Patents by Inventor Yi Tang
Yi Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11979156Abstract: A level shifter includes a buffer circuit, a first shift circuit, and a second shift circuit. The buffer circuit provides a first signal and a first inverted signal to the first shift circuit, such that the first shift circuit provides a second signal and a second inverted signal to the second shift circuit. The second shift circuit generates a plurality of output signals according to the second signal and the second inverted signal. The first shift circuit includes a plurality of first stacking transistors and a first voltage divider circuit. The first voltage divider circuit is electrically coupled between a first system high voltage terminal and a system low voltage terminal. The first voltage divider circuit is configured to provide a first inner bias to gate terminals of the first stacking transistors.Type: GrantFiled: March 21, 2023Date of Patent: May 7, 2024Assignee: AU OPTRONICS CORPORATIONInventors: Yi-Chen Lu, Hsu-Chi Li, Yi-Jan Chen, Boy-Yiing Jaw, Chin-Tang Chuang, Chung-Hung Chen
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Publication number: 20240145545Abstract: The semiconductor structure comprises: semiconductor channels, first gate structures, second gate structures and bit lines. Each semiconductor channel extends in a third direction and has an L-shaped cross-section in a plane perpendicular to the third direction, each of the semiconductor channels comprises a first L-shaped sidewall and a second L-shaped sidewall which are opposite to each other and extend in the third direction, the first L-shaped sidewall comprises a first face extending in a first direction and a second face extending in a second direction. Each first gate structure is in contact with the first face. Each second gate structures is in contact with the second face, each first gate structure is in contact with the respective second gate structure. The bit lines extend in the second direction and are located on a side of each of the semiconductor channels in the third direction.Type: ApplicationFiled: November 16, 2023Publication date: May 2, 2024Inventor: Yi TANG
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Publication number: 20240123821Abstract: A powertrain system and an electric vehicle to reduce a structure size of the powertrain system. The powertrain system includes two subsystems. The two subsystems are disposed side by side in a first direction and are symmetrical to each other. Each of the subsystems includes a motor, a deceleration mechanism, and an output shaft. A rotation shaft of the motor is disposed in a second direction. The deceleration mechanism includes a cylindrical gear pair and a bevel gear pair. The cylindrical gear pair includes an active cylindrical gear and a driven cylindrical gear, and the active cylindrical gear is connected to the rotation shaft of the motor. The driven cylindrical gear is located on a side that is of the active cylindrical gear and that is away or distal from the other subsystem. The bevel gear pair includes an active bevel gear and a driven bevel gear.Type: ApplicationFiled: December 22, 2023Publication date: April 18, 2024Applicant: Huawei Digital Power Technologies Co., Ltd.Inventors: Zhengyi TANG, Wenwu MA, Jingzhou WEI, Yi CAO
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Patent number: 11962526Abstract: A method for obtaining a quantity of resource elements in a communication process, comprising: determines a downlink control information format of downlink control information, obtains, based on the downlink control information format, a quantity of resource elements occupied by a demodulation reference signal (DMRS); and determines a size of transport block (TBS) based on the quantity of resource elements occupied by the DMRS.Type: GrantFiled: February 19, 2021Date of Patent: April 16, 2024Assignee: Huawei Technologies Co., Ltd.Inventors: Ting Wang, Yongzhao Cao, Yi Wang, Hao Tang, Zhenfei Tang
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Patent number: 11952307Abstract: A method for preparing a microstructure on the surface of glass by titanium oxide nanoparticle-assisted infrared nanosecond laser, including the following steps: (1) dropwise applying a titanium oxide nanoparticle hydrogel onto the surface of a glass sample; (2) pressing another piece of glass on the surface of the hydrogel, so the hydrogel is evenly distributed between the two pieces of glass, and allowing the two pieces of glass to stand horizontally for a period of time to air-dry the hydrogel; (3) separating the two pieces of glass to obtain a glass with a uniform titanium oxide nanoparticle coating; (4) forming a microstructure using an infrared nanosecond laser with a wavelength of 1064 nm; and (5) performing after-treatment, including ultrasonically cleaning the sample with acetone, absolute ethanol and deionized water respectively for 10 min to remove titanium oxide nanoparticles attached to the surface, to obtain a glass sample with the microstructure.Type: GrantFiled: December 28, 2019Date of Patent: April 9, 2024Assignee: SHANDONG UNIVERSITYInventors: Yukui Cai, Zhanqiang Liu, Xichun Luo, Yiping Tang, Yi Wan, Qinghua Song, Bing Wang
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Patent number: 11945542Abstract: Disclosed is an express tricycle target object, falling within the field of intelligent connected vehicle (ICV) test equipment. A base plate, vehicle body support plates, two lateral support plates, a vehicle head support plate, several locking mechanisms and skins are included. The vehicle body support plates, the lateral support plates and the vehicle head support plate are assembled into the shape of the express tricycle target object via the locking mechanisms, and different parts of the skins are arranged with wave-absorbing sponges to reduce a radar cross section or with metal substances to enhance a radar cross section, to solve the problem of the insufficient coverage of traffic accident scenes in current tests of the active safety performance of ICVs.Type: GrantFiled: November 28, 2023Date of Patent: April 2, 2024Assignees: China Automotive Engineering Research Institute Co., Ltd., Intelligent Connected Technology of CAERI Co., Ltd.Inventors: Xinming Wan, Qiang Zhang, Xin Zhang, Yu Tang, Tao Chen, Wei Pan, Yi Li
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Patent number: 11950491Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.Type: GrantFiled: November 17, 2020Date of Patent: April 2, 2024Assignee: RAYNERGY TEK INCORPORATIONInventors: Yi-Ming Chang, Chuang-Yi Liao, Wei-Long Li, Yu-Tang Hsiao, Chun-Chieh Lee, Chia-Hua Li, Huei-Shuan Tan
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Patent number: 11947069Abstract: A method can include accessing a measurement model in memory of a downhole tool; determining an optimal parameter set using a processor of the downhole tool and the measurement model; and performing at least one measurement using at least one sensor of the downhole tool operated according to the optimal parameter set.Type: GrantFiled: May 15, 2019Date of Patent: April 2, 2024Assignee: SCHLUMBERGER TECHNOLOGY CORPORATIONInventors: Yiqiao Tang, Yi-Qiao Song, Nicholas Heaton, Martin Hurlimann, Scott DiPasquale, Diogenes Molina, Albina Rishatovna Mutina
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Patent number: 11948836Abstract: Apparatuses and methods to provide electronic devices having metal films are provided. Some embodiments of the disclosure utilize a metallic tungsten layer as a liner that is filled with a metal film comprising cobalt. The metallic tungsten layer has good adhesion to the cobalt leading to enhanced cobalt gap-fill performance.Type: GrantFiled: October 11, 2021Date of Patent: April 2, 2024Assignee: Applied Materials, Inc.Inventors: Yu Lei, Sang-Hyeob Lee, Chris Pabelico, Yi Xu, Tae Hong Ha, Xianmin Tang, Jin Hee Park
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Publication number: 20240099121Abstract: An organic optoelectronic device comprises a first electrode, an active layer and a second electrode. Active layer materials of the active layer comprise a block conjugated polymer materials which includes a structure of formula I: The polymer 1 is a p-type polymer with high energy gap, and the polymer 1 comprises a first electron donor and a first electron acceptor arranged alternately. The polymer 2 is a p-type polymer with low energy gap, and the polymer 2 comprises a second electron donor and a second electron acceptor arranged alternately. Wherein, o and p>0. The organic optoelectronic device of the present invention transfers carriers through the polymer 2 with low energy gap, and suppresses the recombination probability of carriers through the polymer 1 with high energy gap, thereby reducing the leakage current of the organic optoelectronic device.Type: ApplicationFiled: August 18, 2023Publication date: March 21, 2024Inventors: Yi-Ming Chang, Chuang-Yi Liao, Yu-Tang Hsiao, CHENG-CHANG LAI
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Publication number: 20240094343Abstract: A method, device, system, and storage medium for tracking a moving target are provided. The method uses three-dimensional radar observation data to construct a state vector and a motion model of the moving target, thereby to construct a state equation and an observation equation for achieving filtering and tracking within a linear Gaussian framework. The disclosure is also suitable for a moving target in a two-dimensional scene with a distance and an azimuth, and the disclosure use a two-dimensional observation vector to construct a dynamic system to achieving tracking of the moving target. The disclosure can be used in radar systems containing Doppler measurements, and tracking of moving targets can be implemented by performing dimension-expansion processing on observation equations.Type: ApplicationFiled: August 16, 2023Publication date: March 21, 2024Inventors: XuanZhi Zhao, Wen Zhang, ZengLi Liu, Kang Liu, HaiYan Quan, Yi Peng, JingMin Tang, YaoLian Song, Zheng Chen
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Publication number: 20240098966Abstract: A transistor includes a source structure, a trench, a drain structure, and a gate structure. The trench sequentially has first and second end faces which are arranged opposite in a first direction. The source structure extends from the first end face in a second direction. The source structure sequentially has third and fourth end faces which are arranged opposite in the first direction. The fourth end face is connected to the first end face. The drain structure extends from the second end face in a direction opposite to the second direction. The drain structure sequentially has fifth and sixth end faces which are arranged opposite in the first direction. The fifth end face is connected to the second end face. The second direction intersects the first direction. The gate structure surrounds the trench and is connected to the fourth and the fifth end face.Type: ApplicationFiled: February 13, 2023Publication date: March 21, 2024Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.Inventor: Yi TANG
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Publication number: 20240096498Abstract: A method for evaluating a risk of a subject getting a specific disease includes steps of: storing a reference database that contains original parameter sets; selecting target alleles from an SNP profile derived from genome sequencing data of a subject; selecting target parameter sets from among the original parameter sets; calculating, for each of the target parameter sets, a race factor based on a global risk allele frequency and a group-specific risk allele frequency included in the target parameter set; calculating a genetic factor based on statistics, global reference allele frequencies, the race factors for the target parameter sets, and numbers of chromosomes in homologous chromosome pairs included in the target parameter sets; calculating a citation factor based on numbers of citation times included in the target parameter sets; and calculating a risk score based on the genetic factor and the citation factor.Type: ApplicationFiled: August 28, 2023Publication date: March 21, 2024Inventors: Yi-Ting CHEN, Sing-Han HUANG, Ching-Yung LIN, Xiang-Yu LIN, Cheng-Tang WANG, Raksha NANDANAHOSUR RAMESH, Pei-Hsin CHEN
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Patent number: 11933828Abstract: A measurement method for a device includes, for each antenna group other than a target antenna group in an antenna array, determining compensation values of the antenna group based on characteristic parameters of the antenna group and characteristic parameters of the target antenna group, and adjusting, based on the compensation values of the antenna group, an electromagnetic wave transmitted by each antenna unit in the antenna group such that electromagnetic waves transmitted by all antenna units in the antenna array have a same phase or amplitude when the electromagnetic waves arrive at a measurement probe of a second device, where the electromagnetic wave is used to measure an over-the-air beam parameter of the first device, and a distance between the first device and the measurement probe is less than a far-field boundary distance.Type: GrantFiled: December 10, 2020Date of Patent: March 19, 2024Assignee: HUAWEI TECHNOLOGIES CO., LTD.Inventors: Yi Tang, Zhiwei Zhang, Feng Li
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Publication number: 20240087955Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.Type: ApplicationFiled: September 1, 2023Publication date: March 14, 2024Inventors: Yi XU, Xianyuan ZHAO, Zhimin QI, Aixi ZHANG, Geraldine VASQUEZ, Dien-Yeh WU, Wei LEI, Xingyao GAO, Shirish PETHE, Wenting HOU, Chao DU, Tsung-Han YANG, Kyoung-Ho BU, Chen-Han LIN, Jallepally RAVI, Yu LEI, Rongjun WANG, Xianmin TANG
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Publication number: 20240085858Abstract: The present invention discloses a smart watch, including a housing with a mounting cavity, a top cover that covers the housing, a movement in the mounting cavity, a watch dial for displaying time, a light emitting module, a shake sensing module, a tap sensing module, and an audio player. The light emitting module is configured to be turned on when the shake sensing module senses that the smart watch is shaken and turned off when the tap sensing module senses that the smart watch is tapped. The audio player is configured to be started when the smart watch is tapped or shaken. According to the present invention, when needing to turn on the light emitting module, a user only needs to shake the smart watch worn on his/her wrist, and when needing to turn off the light emitting module, the user only needs to tap the smart watch with his/her hand. Compared with the way of turning on the light emitting module by pressing a physical button, the smart watch is simpler and more convenient in operation.Type: ApplicationFiled: September 9, 2022Publication date: March 14, 2024Inventors: Yangde Li, Wenxuan Li, Mixin Tang, Yi Li, Yucheng Liang, Mingyang Cui
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Publication number: 20240090191Abstract: Embodiments provide a method for fabricating a semiconductor structure and a semiconductor structure. The method includes: providing a substrate; forming, on a surface of the substrate, stacked structures arranged at intervals in a first direction and a first isolation layer located between adjacent stacked structures, the stacked structure including a first interlayer dielectric layer, an initial active layer, and a second interlayer dielectric layer; etching a portion of the initial active layer to form a first trench; forming a metal conductive layer in the first trench, the metal conductive layer being in contact connection with the remained initial active layer; and etching a portion of the metal conductive layer to form lower electrode structures arranged in an array in the first direction and a second direction, where the first direction is perpendicular to the surface of the substrate, and the second direction is parallel to the surface of the substrate.Type: ApplicationFiled: November 14, 2023Publication date: March 14, 2024Inventor: Yi TANG
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Publication number: 20240089198Abstract: A packet processing method and system, and a network device are disclosed, and belong to the field of network technologies. A first network device sends a first packet to a second network device through a first tunnel, and sends a second packet to a third network device through a second tunnel. The second network device forwards the first packet to the third network device through a third tunnel. The third network device processes the first packet and the second packet. The first network device is located at a first site. The second network device and the third network device are located at a second site. The first site and the second site are connected through a wide area network. Wide area network multipath transmission may be implemented in a multi-gateway scenario.Type: ApplicationFiled: November 17, 2023Publication date: March 14, 2024Inventors: Boyuan YU, Qi YU, Penghe TANG, Yi KAI, Huanhuan ZHANG, Nu XIA
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Patent number: 11924141Abstract: This application provides example communication methods, terminal devices, and network devices. One example method includes configuring, by a network device, a first bandwidth part BP and a second BP for a terminal device. The network device then sends a first TB to the terminal device. When the first BP and the second BP correspond to a same physical parameter, the first TB is mapped onto the first BP and the second BP. When the first BP and the second BP correspond to different physical parameters, the network device further sends a second TB to the terminal device, where the first TB is mapped onto the first BP, and the second TB is mapped onto the second BP.Type: GrantFiled: May 13, 2022Date of Patent: March 5, 2024Assignee: Huawei Technologies Co., Ltd.Inventors: Hua Li, Hao Tang, Yi Wang, Zhenfei Tang
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Patent number: D1025930Type: GrantFiled: November 22, 2022Date of Patent: May 7, 2024Assignee: EMOMO TECHNOLOGY CO., LTD.Inventors: Wei Zhou, Wenji Tang, Jing Song, Yushu Zhao, Xiaolian Zhou, Zhigang Wang, Jun Yang, Qishuang Lu, Juntao Chen, Yi Wang