Patents by Inventor Yi Ting

Yi Ting has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240165262
    Abstract: Provided is a toroidal mixed nanoparticle including a first polymer and a second polymer interacting with the first polymer. Also provided is a method for preparing the toroidal mixed nanoparticle, including mixing the first polymer and the second polymer having cleavable hydrophobic groups to form a mixed nanoparticle; and removing a portion of cleavable hydrophobic groups from the second polymer to make the second polymer charged and to form the toroidal mixed nanoparticle. Further provided is a method for delivering a drug or a bioactive agent to a subject in need thereof, including administering to the subject a pharmaceutical composition that includes the toroidal mixed nanoparticle conjugated to an effective amount of the drug or the bioactive agent, and a pharmaceutically acceptable excipient thereof.
    Type: Application
    Filed: November 18, 2022
    Publication date: May 23, 2024
    Inventors: YI-TING CHIANG, HUI-CHANG LIN, GUAN-JHONG HUANG
  • Publication number: 20240170610
    Abstract: A light-emitting device includes a semiconductor stack, an insulating reflective structure having an opening, and an electrode located on the insulating reflective structure and filled in the opening to electrically connect to the semiconductor stack. The semiconductor stack having includes a main surface, and a side surface inclined to the main surface. The light-emitting device has a dominant wavelength and a peak wavelength. The insulating reflective structure includes: a first part located on the main surface and having a first thickness; and a second part located on the side surface and having a second thickness different from the first thickness. The second part of the insulating reflective structure has a reflectivity of more than 90% for the dominant wavelength or the peak wavelength within an incident angle of 0° to 30°.
    Type: Application
    Filed: November 21, 2023
    Publication date: May 23, 2024
    Inventors: Heng-Ying CHO, Wei-Ting CHANG, Yi-Hung LIN
  • Patent number: 11990906
    Abstract: Disclosed is an electronic device including a tunable element, a first power supply circuit, and a second power supply circuit. The first power supply circuit and the second power supply circuit are electrically connected to the tunable element. The first power supply circuit drives the tunable element during a first time period. The second power supply circuit drives the tunable element during a second time period.
    Type: Grant
    Filed: September 15, 2022
    Date of Patent: May 21, 2024
    Assignee: Innolux Corporation
    Inventors: Yi-Hung Lin, Chung-Le Chen, Shuo-Ting Hong, Yu-Ti Huang, Yu-Hsiang Chiu, Nai-Fang Hsu
  • Patent number: 11989005
    Abstract: A system performs adaptive thermal ceiling control at runtime. The system includes computing circuits and a thermal management module. When detecting a runtime condition change that affects power consumption in the system, the thermal management module determines an adjustment to the thermal ceiling of a computing circuit, and increases the thermal ceiling of the computing circuit according to the adjustment.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: May 21, 2024
    Assignee: MediaTek Inc.
    Inventors: Bo-Jr Huang, Jia-Wei Fang, Jia-Ming Chen, Ya-Ting Chang, Chien-Yuan Lai, Cheng-Yuh Wu, Yi-Pin Lin, Wen-Wen Hsieh, Min-Shu Wang
  • Patent number: 11990374
    Abstract: Embodiments of the present disclosure provide a method of forming sidewall spacers by filling a trench between a hybrid fin and a semiconductor fin structure. The sidewall spacer includes two fin sidewall spacer portions connected by a gate sidewall spacer portion. The fin sidewall spacer portion has a substantially uniform profile to provide uniform protection for vertically stacked channel layers and eliminate any gaps and leaks between inner spacers and sidewall spacers.
    Type: Grant
    Filed: December 19, 2022
    Date of Patent: May 21, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuan-Ting Pan, Kuo-Cheng Chiang, Shi Ning Ju, Yi-Ruei Jhan, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 11990167
    Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: May 21, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Bo-Jhih Shen, Kuang-I Liu, Joung-Wei Liou, Jinn-Kwei Liang, Yi-Wei Chiu, Chin-Hsing Lin, Li-Te Hsu, Han-Ting Tsai, Cheng-Yi Wu, Shih-Ho Lin
  • Publication number: 20240162007
    Abstract: Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing.
    Type: Application
    Filed: November 10, 2022
    Publication date: May 16, 2024
    Inventors: Deyang LI, Sunil SRINIVASAN, Yi-Chuan CHOU, Shahid RAUF, Kuan-Ting LIU, Jason A. KENNEY, Chung LIU, Olivier P. JOUBERT, Shreeram Jyoti DASH, Aaron EPPLER, Michael Thomas NICHOLS
  • Patent number: 11984489
    Abstract: A semiconductor structure includes a first device and a second device. The first device includes: a first gate structure formed over an active region and a first air spacer disposed adjacent to the first gate structure. The second device includes: a second gate structure formed over an isolation structure and a second air spacer disposed adjacent to the second gate structure. The first air spacer and the second air spacer have different sizes.
    Type: Grant
    Filed: November 21, 2022
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Hsiu Liu, Feng-Cheng Yang, Tsung-Lin Lee, Wei-Yang Lee, Yen-Ming Chen, Yen-Ting Chen
  • Patent number: 11982866
    Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.
    Type: Grant
    Filed: December 15, 2022
    Date of Patent: May 14, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Liang-Ting Ho, Chen-Er Hsu, Yi-Liang Chan, Fu-Lai Tseng, Fu-Yuan Wu, Chen-Chi Kuo, Ying-Jen Wang, Wei-Han Hsia, Yi-Hsin Tseng, Wen-Chang Lin, Chun-Chia Liao, Shou-Jen Liu, Chao-Chun Chang, Yi-Chieh Lin, Shang-Yu Hsu, Yu-Huai Liao, Shih-Wei Hung, Sin-Hong Lin, Kun-Shih Lin, Yu-Cheng Lin, Wen-Yen Huang, Wei-Jhe Shen, Chih-Shiang Wu, Sin-Jhong Song, Che-Hsiang Chiu, Sheng-Chang Lin
  • Publication number: 20240150713
    Abstract: The present invention provides a method for producing CAR T-cells enriched with stem cell-like memory T-cells (Tscm), comprised of: (1) providing PBMCs; (2) isolating of T cells from PBMCs using magnetic beads coated with T-cell specific antibodies; (3) positively selecting T cells by culturing them in the form of T cell-magnetic bead complexes; (4) adding CAR-expressing lentivirus to the activated human T cell-magnetic bead complexes, for transduction of human T cells into CAR-T cells on the human T cell-magnetic bead complexes to obtain human CAR-T cell-magnetic bead complexes; (5) obtaining human CAR-T cells by dissociating the human CAR-T cells from the human CAR-T cell-magnetic bead complexes; and (6) further culturing CAR-T cells to obtain CAR-T cells enriched with Tscm. The present invention expands T cells in a short period of time to obtain CAR-T cells enriched with Tscm, which is suitable for CAR-T immunotherapy.
    Type: Application
    Filed: October 13, 2023
    Publication date: May 9, 2024
    Inventors: Chien-Ting LIN, Chen-Lung LIN, Yi-Hui LAI, Xuan-Hui LIN, Tzu-Hsun TUNG
  • Publication number: 20240150592
    Abstract: Provided is a photocurable conductive black composition including: (a) at least one (meth)acrylate-functionalized urethane oligomer; (b) at least one photopolymerizable compound; (c) a photoinitiator; (d) a visible-light blocking system; (e) conductive fillers; and optionally (f) a thermal initiator. Also provided are a method for forming a cured product composed of the photocurable conductive black compositions, and an article comprising the cured product.
    Type: Application
    Filed: October 24, 2023
    Publication date: May 9, 2024
    Inventors: Chien-Ho HUANG, Yi-Ting CHEN, Tsung-Han TSAI, Li-Yen LIN
  • Publication number: 20240153874
    Abstract: A semiconductor device includes a forksheet structure extending lengthwise along a first direction over a substrate. The forksheet structure has a dielectric wall separating a stack of n-type nanostructures from a stack of p-type nanostructures. A gate structure is over the forksheet structure, the gate structure extending lengthwise along a second direction perpendicular to the first direction. The gate structure is in direct contact with the stack of n-type and p-type nanostructures and in direct contact with the dielectric wall. A first gate interconnect is over and in direct contact with the gate structure and a first gate via is over and in direct contact with the first gate interconnect.
    Type: Application
    Filed: January 26, 2023
    Publication date: May 9, 2024
    Inventors: Yi-Ju Chen, Chung-Ting Li
  • Publication number: 20240154447
    Abstract: A power system including a first battery pack, a second battery pack, and a power management circuit is disclosed. The first battery pack has a first end and a second end, and has a first battery capacity. The second battery pack has a third end and a fourth end. The third end is coupled to the second end of the first battery pack and provides a low battery voltage. The fourth end is grounded, the second battery pack has a second battery capacity, and the second battery capacity is greater than the first battery capacity. The power management circuit is coupled to the second battery pack to receive the low battery voltage, and provides a component operating voltage to an electronic components based on the low battery voltage.
    Type: Application
    Filed: August 29, 2023
    Publication date: May 9, 2024
    Applicant: PEGATRON CORPORATION
    Inventors: Yi-Hsuan Lee, Liang-Cheng Kuo, Chun-Wei Ko, Ya Ju Cheng, Chih Wei Huang, Ywh Woei Yeh, Yu Cheng Lin, Yen Ting Wang
  • Patent number: 11975741
    Abstract: An automated guided vehicle control system includes a commodity database, a historical shopping information acquisition module, a purchase-item prediction module, an automated guided vehicle database, an automated guided vehicle dispatch demand assessment module and an automated guided vehicle dispatch module. The historical shopping information acquisition module is utilized to retrieve the historical shopping information related to the customer, further to locate the instant predicted commodity to be purchased, and thereby to dispatch the suitable automated guided vehicle to the waiting area of the customer. Further, the historical shopping information is evaluated to provide the commodity type options for the customer to select, to locate the commodity type to be purchased, and thereby to organize the automated navigation path for the automated guided vehicle to travel along to reach the assigned commodity display area.
    Type: Grant
    Filed: August 3, 2021
    Date of Patent: May 7, 2024
    Assignee: TECO ELECTRIC & MACHINERY CO., LTD.
    Inventors: Yi-Ting Li, Cheng-Yun Chung
  • Patent number: 11976358
    Abstract: An atomic layer deposition system is provided, including: a main body, a platform, a gas distribution showerhead assembly and a first ring member. The main body defines a reaction chamber, and the platform is located in the reaction chamber. The gas distribution showerhead assembly is disposed on the main body and includes at least one gas inlet channel and at least one gas diffusion plate. Each of the at least one gas diffusion plate includes a plurality of through holes. The first ring member defines a radial direction and is disposed between the platform and the at least one gas diffusion plate. A region of the at least one gas diffusion plate distributed with the plurality of through holes defines an outermost distribution profile. An inner circumferential wall of the first ring member and the outermost distribution profile keep a distance in the radial direction.
    Type: Grant
    Filed: February 28, 2022
    Date of Patent: May 7, 2024
    Assignee: SYSKEY TECHNOLOGY CO., LTD.
    Inventors: Hsueh-Hsien Wu, Chih-Yuan Chan, Yi-Ting Lai
  • Patent number: 11976091
    Abstract: The present disclosure relates generally to terpene glycosides, such as certain such compounds extracted from Stevia rebaudiana Bertoni, Rubus suavissimus, or Siraitia grosvenorii. The disclosure also provides for the use of such compounds as food ingredients, flavors, and sweeteners, and related methods. The disclosure also provides ingestible compositions comprising such compounds, as well as processes for extracting such compounds selectively from certain plant sources.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: May 7, 2024
    Assignee: Firmenich SA
    Inventors: Dan-Ting Yin, Yi-Min Wang, Xian-Wen Gan
  • Publication number: 20240144426
    Abstract: A super resolution (SR) image generation circuit includes an image scale-up circuit, a stable SR processing circuit, a generative adversarial network (GAN) processing circuit, and a configurable basic block pool circuit. The image scale-up circuit is arranged to receive and process an input image to generate a scaled-up image. The stable SR processing circuit is arranged to receive a feature map of the input image to generate a stable delta value. The GAN processing circuit is arranged to receive the feature map to generate a GAN delta value. The configurable basic block pool circuit is arranged to dynamically configure a plurality of basic blocks according to a depth requirement of the input image, to generate a configuration result. The SR image generation circuit generates an SR image according to the scaled-up image, the stable delta value, and the GAN delta value.
    Type: Application
    Filed: April 20, 2023
    Publication date: May 2, 2024
    Applicant: Realtek Semiconductor Corp.
    Inventors: Shang-Yen Lin, Yi-Ting Bao, HAO-RAN WANG, Chia-Wei Yu
  • Publication number: 20240145494
    Abstract: An image sensor structure including a substrate, a first pixel structure, a second pixel structure, a dielectric layer, and a conductive layer stack is provided. The first pixel structure includes a first light sensing device. The second pixel structure includes a second light sensing device. The conductive layer stack includes conductive layers. The conductive layer stack has a first opening and a second opening. The first opening is located directly above the first light sensing device and passes through the conductive layers. The second opening is located directly above the second light sensing device and passes through the conductive layers. The second minimum width of the second opening is smaller than the first minimum width of the first opening. The luminous flux of the second pixel structure is different from the luminous flux of the first pixel structure.
    Type: Application
    Filed: November 22, 2022
    Publication date: May 2, 2024
    Applicant: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Ju-Sheng Lu, Yi-Ting Wang, Ming-Chan Liu
  • Publication number: 20240144428
    Abstract: An image processing circuit includes a receiving circuit, a transmitting circuit, a first asynchronous handshake circuit, a super resolution scale-up model and a second asynchronous handshake circuit. The receiving circuit is arranged to receive an input image with a first pixel clock frequency. The first asynchronous handshake circuit is arranged to receive the input image from the receiving circuit according to a receiving timing. The super resolution scale-up model is arranged to scale up the input image to generate an output image with a second pixel clock frequency. The second asynchronous handshake circuit is arranged to output the output image to the transmitting circuit according to a transmitting timing to transmit the output image, wherein the first asynchronous handshake circuit, the super resolution scale-up model, and the second asynchronous handshake circuit operate at a clock frequency independent of the first pixel clock frequency and the second pixel clock frequency.
    Type: Application
    Filed: June 28, 2023
    Publication date: May 2, 2024
    Applicant: Realtek Semiconductor Corp.
    Inventors: Tien-Hung Lin, Chia-Wei Yu, Yi-Ting Bao
  • Patent number: D1027937
    Type: Grant
    Filed: April 26, 2021
    Date of Patent: May 21, 2024
    Assignee: ASUSTeK COMPUTER INC.
    Inventors: Po-Nien Chen, Yi-Ting Chen