Abstract: A method for fabricating a patterned dichroic film is provided, wherein the method comprises steps as follows: A patterned material layer comprising at least one inorganic layer is firstly provided on a substrate. A film deposition process is then performed to form a dichroic film on the patterned material layer and the substrate. The patterned material layer is subsequently removed, whereby a portion of the dichroic film disposed on the patterned material layer can be removed simultaneously.

Abstract: An optically controlled read only memory is disclosed. The optically controlled read only memory includes a substrate, a plurality of memory cells having optical sensors disposed on the substrate, and at least one shielding structure disposed on the optical sensor, in which the shielding structure selectively shields a portion of the optical sensor according to a predetermined layout. Preferably, the optically controlled read only memory of the present invention is capable of providing two types or more program codes and outputting different program codes carrying different function under different lighting condition.

Abstract: A method for fabricating a patterned dichroic film is provided, wherein the method comprises steps as follows: A patterned material layer comprising at least one inorganic layer is firstly provided on a substrate. A film deposition process is then performed to form a dichroic film on the patterned material layer and the substrate. The patterned material layer is subsequently removed, whereby a portion of the dichroic film disposed on the patterned material layer can be removed simultaneously.

Abstract: A liquid crystal on silicon (LCoS) cell structure includes a substrate, a plurality of top metal regions arranged in an array, a dielectric material filling between the top metal regions and a composite post spacer disposed on the dielectric material and encircling to form a cell space. The composite post spacer includes a first dielectric layer disposed on the dielectric material and a spacer material layer disposed on the first dielectric layer. The spacer material layer and the first dielectric layer are substantially different.

Abstract: An image device includes a substrate having a die region defined thereon, a layout pattern positioned in the die region, and a color filter array including a plurality of color filters arranged in a matrix in the die region. The die region includes at least a die corner. The color filter array further includes at least a color filter array corner, and at least two apexes of the color filters arranged in the color filter array corner are separated from the corresponding layout pattern by a shortest distance.

Abstract: A metal layer structure includes a substrate, a metal layer and a composite passivation. The metal layer is disposed in the substrate. The composite passivation includes a first material layer covering the substrate, an opening disposed in the first material layer and exposing the metal layer as well as a second material layer. The second material layer surrounds the sidewall of the opening, covers part of the bottom of the opening and exposes the metal layer.

Abstract: A liquid crystal on silicon (LCoS) panel is disclosed. The LCoS panel includes: a substrate having at least one metal-oxide semiconductor (MOS) transistor thereon; a pixel electrode array disposed on the substrate; a plurality of color filters with at least two different colors disposed on the pixel electrode array, wherein adjacent color filters comprise a gap therebetween and at least two of the color filters are not coplanar; an inorganic film disposed on the color filters and within the gap; and an organic film covering the inorganic film entirely.

Abstract: A liquid crystal on silicon (LCoS) cell structure includes a substrate, a plurality of top metal regions arranged in an array, a dielectric material filling between the top metal regions and a composite post spacer disposed on the dielectric material and encircling to form a cell space. The composite post spacer includes a first dielectric layer disposed on the dielectric material and a spacer material layer disposed on the first dielectric layer. The spacer material layer and the first dielectric layer are substantially different.

Abstract: A liquid crystal on silicon (LCoS) panel is disclosed. The LCoS panel includes: a substrate having at least one metal-oxide semiconductor (MOS) transistor thereon; a pixel electrode array disposed on the substrate; a plurality of color filters with at least two different colors disposed on the pixel electrode array, wherein adjacent color filters comprise a gap therebetween and at least two of the color filters are not coplanar; an inorganic film disposed on the color filters and within the gap; and an organic film covering the inorganic film entirely.

Abstract: A color filter array includes a die region having at least a die corner defined therein, a plurality of color filters arranged in a matrix in the die region, and at least a step-shaped corner positioned corresponding to the die corner.

Abstract: A process of a micro-display is provided. First, a substrate having a pixel region and a periphery circuit region is provided, in which a metal reflection layer is formed in the pixel region, and a periphery circuit is formed in the periphery circuit region. Next, a dielectric layer is formed on the substrate to cover the pixel region and the periphery circuit region. Then, a patterned mask layer exposing the dielectric layer on the metal reflection layer is formed on the dielectric layer. Thereafter, a portion of the exposed dielectric layer is removed by using the patterned mask layer as a mask. Next, the patterned mask layer is removed. And then, a portion of the dielectric layer is removed to expose the metal reflection layer.

Abstract: A method of improving the flatness of a microdisplay surface is disclosed. A reflective mirror layer and a raised layer are formed in order on substrate. The raised layer may comprise a buffer layer and a stop layer, and pixel electrode areas are defined therefrom and gaps are consequently formed among the pixel electrode areas. A dielectric layer is deposited on the pixel electrode areas and fills the gaps. A dielectric layer is partially removed such that the portion on the raised layer is completely removed and the portion filling the gaps are partially removed, thereby the remaining dielectric layer in the gaps has a height not lower than the top of the mirror layer. Thereafter, the raised layer is entirely or partially removed. A transparent conductive layer may be further combined onto the semiconductor substrate and a liquid crystal filling process is performed to form an LCoS display panel.

Abstract: An optically controlled read only memory is disclosed. The optically controlled read only memory includes a substrate, a plurality of memory cells having optical sensors disposed on the substrate, and at least one shielding structure disposed on the optical sensor, in which the shielding structure selectively shields a portion of the optical sensor according to a predetermined layout. Preferably, the optically controlled read only memory of the present invention is capable of providing two types or more program codes and outputting different program codes carrying different function under different lighting condition.

Abstract: A process for fabricating a micro-display is provided. First, a wafer having a driving circuit thereon is provided. Then, a metallic reflective layer is formed on the wafer. Thereafter, an anti-reflection layer and a patterned photoresist layer are sequentially formed on the metallic reflective layer. Using the patterned photoresist layer as an etching mask, the anti-reflection layer and the metallic reflective layer are etched to form a trench pattern that exposes the surface of the wafer. After that, the patterned photoresist layer is removed. A dielectric layer is formed to cover the anti-reflection layer and fill the trench pattern. Then, a portion of the dielectric layer and the anti-reflection layer are removed to expose the surface of the metallic reflective layer.

Abstract: A structure of a micro-display is provided. The micro-display structure includes a substrate and pixel regions defined on the substrate; a dielectric layer is disposed on a surface of the substrate; a light absorbent layer is positioned on the dielectric layer; and inorganic dichroic layers which are corresponding to each of the pixel regions positioned on the light absorbent layer, respectively.

Abstract: A method of improving the flatness of a microdisplay surface. A reflective mirror layer and a raised layer are formed in order on a semiconductor substrate. The raised layer may comprise a buffer layer and a stop layer, and pixel electrode areas are defined therefrom and gaps are consequently formed among the pixel electrode areas. A dielectric layer is deposited on the pixel electrode areas and fills the gaps. A dielectric layer is partially removed such that the portion on the raised layer is completely removed and the portion filling the gaps are partially removed, thereby the remaining dielectric layer in the gaps has a height not lower than the top of the mirror layer. Thereafter, the raised layer is entirely or partially removed. A transparent conductive layer may be further combined onto the semiconductor substrate and a liquid crystal filling process is performed to form an LCoS display panel.

Abstract: A process of physical vapor depositing mirror layer with improved reflectivity is disclosed. A wafer is loaded into a PVD tool comprising a degas chamber, a Ti/TiN sputter deposition chamber, a cooling chamber, and an aluminum sputter deposition chamber. A wafer degas process is first performed within the degas chamber. The wafer is then transferred to the Ti/TiN sputter deposition chamber and deposition sputtering a layer of titanium onto the wafer. The wafer is transferred to the cooling chamber and gas cooling the wafer temperature down to 40-50° C. The wafer is then transferred to the aluminum sputter deposition chamber and deposition sputtering a layer of aluminum onto the wafer at 40-50° C. with a backside gas turned off. The deposited layer of aluminum over the wafer has a reflectivity of about 0.925 at wavelength of around 380 nm.

Abstract: A method of manufacturing a dichroic filter array is provided and comprises forming a first dichroic filter material layer on a substrate, and then forming a patterned photoresist layer on the first dichroic filter material layer. The exposed portion of the first dichroic filter material layer is removed so as to form a plurality of first dichroic filter units. A second dichroic filter material layer is formed on the substrate and the patterned photoresist layer. The patterned photoresist layer and the second dichroic filter material layer located on the patterned photoresist layer are removed, and the second dichroic filter material layer between the first dichroic filter units are transformed into a plurality of second dichroic filter units. By using etching process and the lift-off process to simultaneously remove redundant dichroic filter material and the photoreisit layer, the multi-chroic filter array device with a relatively small volume can be rapidly produced.

Abstract: A method of fabricating a color filter is provided, which includes the following steps. First, a loose composite film is formed. Next, the loose composite film is patterned to form a patterned composite film. Then, a treatment process is performed to dense the patterned composite film, thereby a color filter is formed.

Abstract: A method of improving the flatness of a microdisplay surface is disclosed. A reflective mirror layer and a raised layer are formed in order on substrate. The raised layer may comprise a buffer layer and a stop layer, and pixel electrode areas are defined therefrom and gaps are consequently formed among the pixel electrode areas. A dielectric layer is deposited on the pixel electrode areas and fills the gaps. A dielectric layer is partially removed such that the portion on the raised layer is completely removed and the portion filling the gaps are partially removed, thereby the remaining dielectric layer in the gaps has a height not lower than the top of the mirror layer. Thereafter, the raised layer is entirely or partially removed. A transparent conductive layer may be further combined onto the semiconductor substrate and a liquid crystal filling process is performed to form an LCoS display panel.