Abstract: A semiconductor wiring substrate includes a first circuit layer, a second circuit layer and a first dielectric layer. The first circuit layer includes a plurality of first signal traces and a plurality of first ground traces, wherein the first signal traces and the first ground traces are alternatively arranged on the first circuit layer, and one of the first signal traces is spaced at a first spacing from adjacent one of the first ground traces. The first dielectric layer is between the first circuit layer and the second circuit layer and has a first thickness in an arrangement direction of the first circuit layer, the first dielectric layer and the second circuit layer, wherein the first spacing substantially ranges from 0.78 to 1.96 times the first thickness.

Abstract: An interposer routing structure includes a first trace layer, a bump layer, a second trace layer and a third trace layer. The first trace layer is configured to receive a power. The bump layer is coupled to a die. The second trace layer and the third trace layer are coupled between the first trace layer and the bump layer, and include multiple ground traces and multiple power traces. The ground traces are located on both sides of at least one of the power traces, so that the ground traces isolate the at least one power trace and multiple signal traces. The power traces of the second trace layer are coupled to each other by a connecting power trace, and the ground traces of the third trace layer are coupled to each other by a connecting ground trace.

Abstract: A semiconductor wiring substrate includes a first circuit layer, a second circuit layer and a first dielectric layer. The first circuit layer includes a plurality of first signal traces and a plurality of first ground traces, wherein the first signal traces and the first ground traces are alternatively arranged on the first circuit layer, and one of the first signal traces is spaced at a first spacing from adjacent one of the first ground traces. The first dielectric layer is between the first circuit layer and the second circuit layer and has a first thickness in an arrangement direction of the first circuit layer, the first dielectric layer and the second circuit layer, wherein the first spacing substantially ranges from 0.78 to 1.96 times the first thickness.