Patents by Inventor Yi-Wei Lian

Yi-Wei Lian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Schottky barrier diode
    Patent number: 9450111
    Abstract: A Schottky barrier diode includes a substrate, a buffer layer formed on the substrate, an upper layer formed on the buffer layer, a first electrode layer formed on the upper layer as an anode of the Schottky barrier diode, a second electrode layer formed on the upper layer as a cathode of the Schottky barrier diode, and a first n-type doping region formed in the upper layer and under the first electrode layer, and contacting the first electrode layer. An edge of the first n-type doping region and an edge of the first electrode layer are separated by a first predetermined distance at a first direction at which the first electrode layer faces the second electrode layer.
    Type: Grant
    Filed: April 3, 2014
    Date of Patent: September 20, 2016
    Assignee: National Tsing Hua University
    Inventors: Yi-Wei Lian, Shuo-Hung Hsu
  • SCHOTTKY BARRIER DIODE
    Publication number: 20150171228
    Abstract: A Schottky barrier diode includes a substrate, a buffer layer formed on the substrate, an upper layer formed on the buffer layer, a first electrode layer formed on the upper layer as an anode of the Schottky barrier diode, a second electrode layer formed on the upper layer as a cathode of the Schottky barrier diode, and a first n-type doping region formed in the upper layer and under the first electrode layer, and contacting the first electrode layer. An edge of the first n-type doping region and an edge of the first electrode layer are separated by a first predetermined distance at a first direction at which the first electrode layer faces the second electrode layer.
    Type: Application
    Filed: April 3, 2014
    Publication date: June 18, 2015
    Applicant: NATIONAL TSING HUA UNIVERSITY
    Inventors: Yi-Wei Lian, Shuo-Hung Hsu
  • Schottky diode structure and method for fabricating the same
    Patent number: 8436361
    Abstract: A Schottky diode structure and a method for fabricating the same, which are based on the principle of charge compensation, wherein a P-type gallium nitride layer is added to a Schottky diode structure, and wherein the PN junction of the P-type gallium nitride layer and the N-type gallium nitride layer decreases the non-uniformity of the surface electric field distribution, whereby the breakdown voltage of the element is raised.
    Type: Grant
    Filed: June 16, 2010
    Date of Patent: May 7, 2013
    Assignee: National Tsing Hua University
    Inventors: Shuo-Hung Hsu, Yi-Wei Lian, Yu-Syuan Lin
  • SCHOTTKY DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20110309371
    Abstract: A Schottky diode structure and a method for fabricating the same, which are based on the principle of charge compensation, wherein a P-type gallium nitride layer is added to a Schottky diode structure, and wherein the PN junction of the P-type gallium nitride layer and the N-type gallium nitride layer decreases the non-uniformity of the surface electric field distribution, whereby the breakdown voltage of the element is raised.
    Type: Application
    Filed: June 16, 2010
    Publication date: December 22, 2011
    Inventors: Shuo-Hung Hsu, Yi-Wei Lian, Yu-Syuan Lin