Abstract: A method of operating an integrated circuit includes using a first switching device to couple a bio-sensing device to a first signal path, generating, using the bio-sensing device, a bio-sensing signal on the first signal path in response to an electrical characteristic of a sensing film, using a second switching device to couple a temperature-sensing device to a second signal path, and generating, using the temperature-sensing device, a temperature-sensing signal on the second signal path in response to a temperature of the sensing film. The first and second switching devices, the bio-sensing device, the temperature-sensing device, and the sensing film are components of a sensing pixel of a plurality of sensing pixels of the integrated circuit.

Abstract: A method for the selective formation of epitaxial layers is described herein. In the method, epitaxial layers are deposited to form source and drain regions around a horizontal gate all around (hGAA structure). The method includes co-flowing a combination of chlorinated silicon containing precursors, antimony containing precursors, and n-type dopant precursors. The resulting source and drain regions are selectively grown from crystalline nanosheets or nanowires of the hGAA structure over the non-crystalline gate structure and dielectric layers. The source and drain regions are predominantly grown in a <110> direction.

Abstract: A method for adjusting time-averaged (TA) parameters of a transmitting (TX) power of a radio module includes: obtaining at least one message of the at least one other radio module or at least one message of the radio module; determining a scenario of the TX power of the radio module according to the at least one message of the at least one other radio module or the at least one message of the radio module; determining whether the scenario is different from a predetermined scenario of the TX power of the radio module; and in response to the scenario being different from the predetermined scenario, adjusting the TA parameters according to the scenario.

Abstract: A detection method for a malicious domain name in a domain name system (DNS) and a detection device are provided. The method includes: obtaining network connection data of an electronic device; capturing log data related to at least one domain name from the network connection data; analyzing the log data to generate at least one numerical feature related to the at least one domain name; inputting the at least one numerical feature into a multi-type prediction model, which includes a first data model and a second data model; and predicting whether a malicious domain name related to a malware or a phishing website exists in the at least one domain name by the multi-type prediction model according to the at least one numerical feature.

Abstract: One or more embodiments described herein relate to selective methods for fabricating devices and structures. In these embodiments, the devices are exposed inside the process volume of a process chamber. Precursor gases are flowed in the process volume at certain flow ratios and at certain process conditions. The process conditions described herein result in selective epitaxial layer growth on the {100} planes of the crystal planes of the devices, which corresponds to the top of each of the fins. Additionally, the process conditions result in selective etching of the {110} plane of the crystal planes, which corresponds to the sidewalls of each of the fins. As such, the methods described herein provide a way to grow or etch epitaxial films at different crystal planes. Furthermore, the methods described herein allow for simultaneous epitaxial film growth and etch to occur on the different crystal planes.

Abstract: A light-emitting diode and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, an LED wafer is provided. The LED wafer includes a substrate and a light-emitting semiconductor stacking structure positioned on the surface of the substrate. The light-emitting semiconductor stacking structure includes a first type semiconductor layer, an active layer, and a second type semiconductor layer from a side of the substrate. Second, dicing lanes are defined on the upper surface of the LED wafer. Third, dicing is performed along the dicing lanes of the substrate using a laser. The laser is focused on the lower surface of the substrate to form a surface hole and focused inside the substrate to form an internal hole. The diameter of the surface hole is greater than the diameter of the internal hole. Fourth, the LED wafer is separated into LED chips along the dicing lanes.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: A method for adjusting a transmitting (TX) power ratio of a radio module includes: separating multiple radio modules into multiple radio groups according to a radiofrequency (RF) regulation, wherein the multiple radio modules comprise the radio module; mapping an RF exposure limit to a TX power limit; interacting with at least one other radio module for adjusting the TX power ratio, to obtain at least one adjusted TX power ratio, wherein the radio module and the at least one other radio module are comprised in a same radio group of the multiple radio groups; and adjusting the TX power limit according to the at least one adjusted TX power ratio, to generate an adjusted TX power limit of the radio module.

Abstract: A method for improving transmission power management with compliance to regulations of radiofrequency exposure, which may comprise: at a current time, estimating whether a window average power, which may reflect average power transmitted using a radio technology during a moving time window, will exceed a power limit after the current time; if true, proceeding to at least one of a first handling subroutine and a second handling subroutine to set a power cap, and causing power transmitted to be capped by the power cap after the current time. The first handling subroutine may comprise: scheduling to set the power cap lower at a scheduled time. Estimating whether the window average power will exceed the power limit may involve discarding one of a plurality of power records. The second handling subroutine may comprise: setting the power cap not higher than the discarded one of the plurality of power records.