Patents by Inventor Yiannakis Manoli

Yiannakis Manoli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integratable capacitative pressure sensor
    Patent number: 5431057
    Abstract: A process for manufacturing an integratable capacitative pressure sensor includes the following steps, starting from a semiconductor substrate (1): application of a guard film (2), precipitation of a polycrystalline semiconductor film (4), doping the polycrystalline semiconductor film (4) and removal of the guard film (2) by etching; then insulating the semiconductor zone (7) from the semiconductor substrate (1), and applying an insulator film (8) on the insulated semiconductor zone (7). The pressure sensor product, which is compatible with CMOS circuits and has increased sensor accuracy, includes a semiconductor zone (7) insulated from the semiconductor substrate (1) and an insulator film (8) applied on the insulated semiconductor zone (7), the polycrystalline semiconductor film (4) being located on the insulator film (8) above the insulated semiconductor zone (7).
    Type: Grant
    Filed: February 18, 1994
    Date of Patent: July 11, 1995
    Assignee: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung e.V.
    Inventors: Gunther Zimmer, Jorg Eichholz, Wilfried Mokwa, Michael Kandler, Yiannakis Manoli
  • Integratable capacitative pressure sensor and process for its manufacture
    Patent number: 5321989
    Abstract: A process for manufacturing an integratable capacitative pressure sensor includes the following steps, starting from a semiconductor substrate (1): application of a guard film (2), precipitation of a polycrystalline semiconductor film (4), doping the polycrystalline semiconductor film (4) and removal of the guard film (2) by etching; then insulating the semiconductor zone (7) from the semiconductor substrate (1), and applying an insulator film (8) on the insulated semiconductor zone (7). The pressure sensor product, which is compatible with CMOS circuits and has increased sensor accuracy, includes a semiconductor zone (7) insulated from the semiconductor substrate (1) and an insulator film (8) applied on the insulated semiconductor zone (7), the polycrystalline semiconductor film (4) being located on the insulator film (8) above the insulated semiconductor zone (7).
    Type: Grant
    Filed: February 26, 1993
    Date of Patent: June 21, 1994
    Assignee: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung e.V.
    Inventors: Gunther Zimmer, Jorg Eichholz, Wilfried Mokwa, Michael Kandler, Yiannakis Manoli