Patents by Inventor Yichen Ma

Yichen Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11993013
    Abstract: A multi-nozzle concurrent printing system includes a plurality of extrusion type nozzle assemblies, a three-axial translation mechanism and an objective table. Each nozzle assembly is provided with a nozzle, a storage barrel and a temperature control module; the three-axial translation mechanism includes an X-axial translation unit, a Y-axial translation unit and a Z-axial translation unit, and the nozzle assemblies are mounted on the Z-axial translation unit; and there are a plurality of nozzle assemblies, the printing system is provided with a concurrent calibration sensor, and the concurrent calibration sensor is taken as an original point of a coordinate system of the printing system. The printing system is provided with the plurality of nozzle assemblies which can work cooperatively or sequentially, the printing mode is flexible and changeable, and non-uniform mixing system forming of materials can be realized; and stable output of the materials in a formal printing task is guaranteed.
    Type: Grant
    Filed: January 18, 2022
    Date of Patent: May 28, 2024
    Assignee: Zhejiang University
    Inventors: Bin Zhang, Qi Li, Yichen Luo, Teng Yang, Bo Zhang, Liang Ma, Huayong Yang
  • Publication number: 20240136382
    Abstract: A photosensor provided herein includes a sensing structure and a microlens. The sensing structure includes an epitaxial layer, a deep trench and a scattering structure. The epitaxial layer has an illuminated surface and a non-illuminated surface. The deep trench isolation is located along an edge of the epitaxial layer. The scattering structure is embedded in the epitaxial layer and extends inwardly from the illuminated surface. The scattering structure includes a first circular ring pattern and a peripheral pattern. The deep trench isolation surrounds the scattering structure, the peripheral pattern is connected with the deep trench isolation and the first circular ring pattern is separated from the peripheral pattern and the deep trench isolation. The microlens is disposed on the epitaxial layer, wherein the illuminated surface of the epitaxial layer is relatively close to the microlens than the non-illuminated surface.
    Type: Application
    Filed: October 18, 2022
    Publication date: April 25, 2024
    Applicant: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Eknath Sarkar, Yichen Ma, Yu-Chieh Lee, Chee-Wee Liu