Abstract: This disclosure relates generally to vaporizing devices and components of vaporizing devices, such as mouthpiece locking structures. In various aspects, a locking structure for a mouthpiece includes a circular body extending between a proximal end and a distal end, where an interior surface of the body defines a central lumen. The locking structures may also include a clamp disposed within the central lumen, where the clamp has an angled wall extending inwardly from a rim of the interior surface of the body towards the central lumen. The clamp may additionally include a notch within the angled wall, with the angled wall of the clamp (i) encircling a substantial entirety of a circumference of the body, (ii) defining a clamp lumen, (iii) having a thickness ranging from about 0.5 mm to about 0.7 mm, and (iv) having an angle or bias of from about 100° to about 110°.

Abstract: This disclosure relates generally to vaporizing devices and components of vaporizing devices, such as mouthpiece locking structures. In various aspects, a locking structure for a mouthpiece includes a circular body extending between a proximal end and a distal end, where an interior surface of the body defines a central lumen. The locking structures may also include a clamp disposed within the central lumen, where the clamp has an angled wall extending inwardly from a rim of the interior surface of the body towards the central lumen. The clamp may additionally include a notch within the angled wall, with the angled wall of the clamp (i) encircling a substantial entirety of a circumference of the body, (ii) defining a clamp lumen, (iii) having a thickness ranging from about 0.5 mm to about 0.7 mm, and (iv) having an angle or bias of from about 100° to about 110°.

Abstract: A cartridge for a vaping device can include a tank body forming a reservoir for holding a liquid to be vaporized. A center post has a distal atomizer portion and a proximal vapor outlet portion, the distal atomizer portion for housing a heating element. The center post is formed at least partially of a ceramic material, and the lumen of the proximal vapor outlet portion has an inner diameter of at least 2.7 mm to reduce clogging of the lumen by oil.

Abstract: A vaping system includes a tank with a reservoir for holding a liquid to be vaporized. The tank includes a main body and a distal base portion. The distal base portion includes an inwardly extending shoulder for interfacing with an outwardly extending flange of the distal base portion of the atomizer housing. The distal base portion also includes an inner, horizontal shelf, and an outer, horizontal shelf. A cut-away groove is formed in the distal end also includes a chamfered portion between the cut-away groove and the outer, horizontal shelf. A plastic oil cup atomizer comprises a connecting post, retaining rings, a first silicone ring, a steel ring, an oil cup body, a first groove, a non-woven sleeve, a ceramic heating core, a first pin, a second pin, polyformaldehyde, a convex ring, a base, an external thread, a second silicone ring, a second groove, a thimble, and a third groove.

Abstract: A ceramic core has a hollow interior with a first, inner diameter. A coil with a second diameter is embedded in the ceramic core. At least a portion of the second diameter is smaller than the first, inner diameter of the ceramic core to expose at least a portion of the coil to the hollow interior of the ceramic core. The coil may be inlaid and fixed on the inner wall of the hollow interior, one end of the coil is fixedly connected to the first pin, the first pin embedded inside the ceramic core. The other end of the coil is fixedly connected to the second pin, the second pin embedded inside the ceramic core. The inner diameter of the coil is d, the inner diameter of the hollow interior is D, d is smaller than D, the wire diameter of the coil is xd, and xd cuts D.

Abstract: A circuit for improving process robustness of sub-threshold SRAM memory cells serves as an auxiliary circuit for a sub-threshold SRAM memory cell. The output of the circuit is connected to PMOS transistors of the sub-threshold SRAM memory cell and substrate of PMOS transistors in the circuit. The circuit includes a detection circuit for threshold voltages of the PMOS transistors and a differential input and single-ended output amplifier. The circuit changes the substrate voltage of the PMOS transistors in the sub-threshold SRAM memory cell and the PMOS transistors in the circuit in a self-adapting manner by detecting threshold voltage fluctuations of PMOS and NMOS transistor resulted from process fluctuations and thereby regulates the threshold voltages of the PMOS transistors, so that the threshold voltages of the PMOS and NMOS transistors match. The circuit improves the noise margin of sub-threshold SRAM memory cells and the process robustness of sub-threshold SRAM memory cells.

Abstract: Disclosed is a noise current compensation circuit. The circuit is provided with two input and output terminals A and B, and two control terminals CON and CONF. The control terminals control a work mode (work state and pre-charge state) of the compensation circuit. The compensation circuit consists of 7 PMOS transistors and 8 NMOS transistors. In the normal work state, by detecting changes of potential change rate of two signal lines in an original circuit, the noise current compensation circuit automatically enables one end of the original circuit that discharges slowly to discharge a signal more slowly, and enables one end of the original circuit that discharges rapidly to discharge a signal more rapidly, thus eliminating the influence of the noise current on the circuit and providing assistance for correct identification of subsequent circuit signals.

Abstract: Disclosed is a noise current compensation circuit. The circuit is provided with two input and output terminals A and B, and two control terminals CON and CONF. The control terminals control a work mode (work state and pre-charge state) of the compensation circuit. The compensation circuit consists of 7 PMOS transistors and 8 NMOS transistors. In the normal work state, by detecting changes of potential change rate of two signal lines in an original circuit, the noise current compensation circuit automatically enables one end of the original circuit that discharges slowly to discharge a signal more slowly, and enables one end of the original circuit that discharges rapidly to discharge a signal more rapidly, thus eliminating the influence of the noise current on the circuit and providing assistance for correct identification of subsequent circuit signals.

Abstract: The present invention discloses a circuit for improving process robustness of sub-threshold SRAM memory cells, which serves as an auxiliary circuit for a sub-threshold SRAM memory cell. The output of the circuit is connected to the PMOS tube of the sub-threshold SRAM memory cell and the substrate of a PMOS tube in the circuit. The circuit comprises a detection circuit for threshold voltage of PMOS tube and a differential input and single-ended output amplifier. The circuit changes the substrate voltage of the PMOS tubes in the sub-threshold SRAM memory cell and the substrate voltage of the PMOS tube in the circuit in a self-adapting manner by detecting threshold voltage fluctuations of PMOS tubes and NMOS tubes resulted from process fluctuations and thereby regulate the threshold voltages of the PMOS tubes, so that the threshold voltage of PMOS tubes matches the threshold voltage of NMOS tubes.