Abstract: An electronic device is provided. The electronic device includes a first substrate, an insulating layer, a first conductive layer and a second conductive layer. The insulating layer is overlapped with the first substrate. The second conductive layer contacts with the first conductive layer. The first conductive layer and the second conductive layer are disposed between the first substrate and the insulating layer. The second conductive layer is disposed between the first conductive layer and the insulating layer. Moreover, a thermal expansion coefficient of the second conductive layer is between a thermal expansion coefficient of the first conductive layer and a thermal expansion coefficient of the insulating layer.

Abstract: The present invention discloses a detection method for low-concentration metal ions in solution, which avoids damage of strong acids and strong alkalis to the field effect transistors (FET) while using a control solution as a reference for calibration. By adjusting the electronic signals (resistance, inductance, current, voltage, etc.) generated by the solution to be tested and the control solution to be the same, the voltage difference therebetween is employed to quantitively infer the metal ions concentration of the solution to be tested.

Abstract: The present invention provides an audio control circuit comprising an USB interface and a processing circuit is disclosed. The USB interface is used to connect to a host device, and the processing circuit is configured to perform enumeration with the host device via the USB interface, and the processing circuit is further configured to determine if the host device operates in a BIOS stage or an operating system stage to generate a control signal according to packets of the enumeration. When the processing circuit determines that the host device operates in the BIOS stage, the processing circuit generates the control signal to enable a de-pop circuit; and when the processing circuit determines that the host device operates in the operating system stage, the processing circuit generates the control signal to disable the de-pop circuit.

Abstract: The application relates to a method for developing the agitation system of a scale-up polymerization vessel. A simulated prediction model is obtained by use of a small polymerization vessel and by integrating Taguchi experimental design method with artificial intelligence (AI) neural network. Accordingly, vessel parameters for the agitation system of a scale-up polymerization vessel can be rapidly and accurately predicted based on simulation qualities thereof, further facilitating a construction of the agitation system of a scale-up polymerization vessel.

Abstract: A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

Abstract: A method of treating a surface of a reticle includes retrieving a reticle from a reticle library and transferring the reticle to a treatment device. The surface of the reticle is treated in the treatment device by irradiating the surface of the reticle UV radiation while ozone fluid is over the surface of the reticle for a predetermined irradiation time. After the treatment, the reticle is transferred to an exposure device for lithography operation to generate a photo resist pattern on a wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is increased if the CDU does not satisfy a threshold CDU.

Abstract: An exosomal nucleic acid extraction method is provided. A substrate is provided, on which antibodies and silicon nanoparticles are disposed, and the antibodies have binding specificity to exosomal surface antigens. After that, based on the binding specificity between the antibodies and the exosomal surface antigens, exosomes in a specimen are separated. Next, the nucleic acids in the separated exosomes are adsorbed by the silicon nanoparticles.

Abstract: A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

Abstract: A method comprises receiving a workpiece that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further comprises patterning the absorber layer to provide first trenches corresponding to circuit patterns on a wafer, and patterning the absorber layer, the capping layer, and the reflective multilayer to provide second trenches corresponding to a die boundary area on the wafer, thereby providing an extreme ultraviolet lithography (EUVL) mask. The method further comprises treating the EUVL mask with a treatment chemical that prevents exposed surfaces of the absorber layer from oxidation.

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

Abstract: An oriented loading system is provided. The oriented loading system includes a substrate, a plurality of wells formed in the substrate, each well having a bottom and sidewalls, a plurality of particles loaded in the wells, wherein the particle comprises a core structure and an inner layer comprising magnetic material partially covering the core structure such that a part of the core structure uncovered by the inner layer is exposed, and a metal layer comprising magnetic material deposited partially in the sidewalls of the wells, wherein the inner layer is attracted by the metal layer such that the exposed core structure is oriented towards the bottom of the well or the inner layer is oriented towards the bottom of the well.

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

Abstract: In some variations, this disclosure provides a surface-modified hydrophobic clay composition for an ink formulation, the composition comprising up to 99 wt % clay particles with a particle-size distribution characterized in that at least 10% are smaller than 0.2 microns, at least 25% are smaller than 0.5 microns, and at least 95% are less than 5 microns; and from about 1 wt % to about 10 wt % of one or more organic compounds selected from quaternary ammonium compounds, organic acids, fatty acids, organic silanes, or organic polysilanes. The surface-modified hydrophobic clay composition may be produced by various methods, including a slurry method or a dry-mixing method. Ink clay loadings in heatset ink formulations may be increased to 10-15% without losing ink gloss. Inks may be produced with lower solvent, resin, and/or pigment concentrations, thereby reducing cost.

Abstract: A deep-sea anchoring device for gravity and anchor composite with a decelerating wing includes an anchoring base, a decelerating wing and an anchor body. The anchoring base provides an anchoring force by its own gravity, heavy pressure and friction with a sea floor. The decelerating wing includes a main decelerating wing, and a secondary decelerating wing that increases the cross-sectional area for diversion, so that a resistance is produced by water flowing through the main and secondary decelerating wings to reduce the falling speed of the anchoring base to a safe range, and prevent the anchoring base from being damaged by its collision with the sea floor. The anchor body is pivoted to the bottom of the anchoring base and anchored by being shoveled into a sea floor mainly consisting of gravels or deposited soil or abutted against rough rocks of a sea floor mainly consisting of rocks.

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

Abstract: A method comprises receiving a workpiece that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer. The method further comprises patterning the absorber layer to provide first trenches corresponding to circuit patterns on a wafer, and patterning the absorber layer, the capping layer, and the reflective multilayer to provide second trenches corresponding to a die boundary area on the wafer, thereby providing an extreme ultraviolet lithography (EUVL) mask. The method further comprises treating the EUVL mask with a treatment chemical that prevents exposed surfaces of the absorber layer from oxidation.

Abstract: The present invention relates to a method for detecting a target molecule, comprising forming a capturing complex comprising the target molecule; and binding the capturing complex with a signal amplifier, wherein the capturing complex has a net electrical charge; the signal amplifier has affinity to the capturing complex and has a like net electrical charge of the net electrical charge of the capturing complex. The invention improves the detection sensitivity and sensing limit of the detection.

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.