Abstract: Within an option selection device structure and a method for fabrication thereof there is formed a terminal metal layer and an option selection device at a co-planar level over a microelectronic substrate. The option selection device is passivated with: (1) a terminal metal passivation layer having an etch stop layer within its thickness; and (2) a bond pad passivation layer. There is simultaneously also formed through the bond pad passivation layer: (1) a via which accesses a bond pad formed contacting the terminal metal layer; and (2) an aperture over the option selection device which stops at the etch stop layer.

Abstract: Within an option selection device structure and a method for fabrication thereof there is formed a terminal metal layer and an option selection device at a co-planar level over a microelectronic substrate. The option selection device is passivated with: (1) a terminal metal passivation layer having an etch stop layer within its thickness; and (2) a bond pad passivation layer. There is simultaneously also formed through the bond pad passivation layer: (1) a via which accesses a bond pad formed contacting the terminal metal layer; and (2) an aperture over the option selection device which stops at the etch stop layer.

Abstract: A container for holding substrates such as a wafer cassette for holding semiconductor wafers is provided. The container is equipped with dividers on the interior sidewalls of the container which are of different lengths or different colors such that an operator when inserting a substrate into the container can easily identify the corresponding pairs of dividers to avoid the cross-slot misplacement of and the subsequent damage to the substrate.

Abstract: An apparatus for controlling temperature of a process chamber which includes a plurality of heating elements mounted juxtaposed to a cylindrical chamber sidewall of the process chamber for heating the chamber, and a plurality of thermal sensors with one mounted juxtaposed to each of the plurality of heating elements such that the temperature of the chamber cavity can be more uniformly controlled. The method may be carried out by first forming a substantially air-tight chamber cavity by a cylindrical chamber sidewall, a top enclosure and a bottom enclosure, and then positioning a plurality of heating elements juxtaposed to and surrounds the cylindrical chamber sidewall and then mounting a plurality of thermal sensors to the plurality of heating elements with one sensor juxtaposed to each heating element, and then controlling the temperature of the process chamber by inputting signals from the plurality of thermal sensors into a controller and then outputting signals to the plurality of heating elements.