Abstract: A process for making a fluid ejector head for a micro-fluid ejection device. In one embodiment, the process comprises depositing a thin film resistive layer on a substrate to provide a plurality of thin film heaters. The thin film resistive layer comprises a tantalum-aluminum-nitride material consisting essentially of AlN, TaN, and TaAl alloys, and containing from about 30 to about 70 atomic % tantalum, from about 10 to about 40 atomic % aluminum and from about 5 to about 30 atomic % nitrogen.

Abstract: A substantially planar fluid ejection actuator and methods for manufacturing substantially planar fluid ejection actuators for micro-fluid ejection heads. One such fluid ejection actuator includes a conductive layer adjacent to a substrate that is configured to define an anode segment spaced apart from a cathode segment. A thermal barrier segment is disposed between the anode and cathode segments. A substantially planar surface is defined by the anode segment, and the thermal barrier segment. A resistive layer is applied adjacent to the substantially planar surface.

Abstract: Methods for forming electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the method may include applying materials to a flexible substrate to form the electronic device. At least some of the materials applied to the flexible substrate may be applied using a printing apparatus. The substrate may be annealed when at least some of the materials are present on the flexible substrate. The resulting electronic device may have a high charge carrier mobility in the range from about 10 cm2/V-s to about 100 cm2/V-s.

Abstract: Electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the printed material and substrate are part of an electronic device having at least three terminals, wherein the electronic device has a charge carrier mobility of at least 10 cm2/V-s. Multi-terminal devices can have a substrate including a doped semiconductor layer and at least two doped regions formed upon the substrate. The doped regions can be doped oppositely from the semiconductor layer and exhibit a charge carrier mobility of greater than 10 cm2/V-s. Methods for making the same are also disclosed.

Abstract: A heater chip has a plurality of heaters each having a length, width and thickness. The length multiplied by the width (heater area) is in a range from about 50 to about 500 micrometers squared while the thickness is in a range from about 500 to about 5000 or 6000 angstroms. The energy required to jet or emit a single drop of ink from the heater during use is in a range from about 0.007 to about 0.99 or 1.19 microjoules. The heater chip is formed as a plurality of thin film layers on a substrate. Energy ranges are taught for all heaters having an area from about 50 to about 4000 micrometers squared and thicknesses ranging from about 500 to about 16,000 angstroms. Printheads containing the heater chip and printers containing the printheads are also disclosed.

Abstract: Micro-fluid ejection devices, methods for making micro-fluid ejection heads, and micro-fluid ejection heads, including a micro-fluid ejection head. One such micro-fluid ejection head has relatively high resistance thin film heaters adjacent to a substrate. The thin film material comprises silicon, metal, and carbon (SiMC wherein M is a metal). Each thin film heater has a sheet resistance ranging from about 100 to about 600 ohms per square and a thickness ranging from about 100 to about 800 Angstroms.

Abstract: The present disclosure is directed to a micro-fluid ejection head for a micro-fluid ejection device. The head includes a semiconductor substrate, a fluid ejection actuator supported by the semiconductor substrate, a nozzle member containing nozzle holes attached to the substrate for expelling droplets of fluid from one or more nozzle holes in the nozzle member upon activation of the ejection actuator. The substrate further includes a thermal insulating barrier layer between the semiconductor substrate and the fluid ejection actuator. The thermal insulating barrier layer includes a porous, substantially impermeable material having a thermal conductivity of less than about 1 W/m-K.

Abstract: A thin film heater for a micro-fluid ejection head and methods for making the thin film heater and for making micro-fluid ejection heads containing the thin film heater. In one embodiment, a thin film heater comprises a tantalum-aluminum-nitride thin film material having a nano-crystalline structure consisting essentially of AlN, TaN, and TaAl alloys. A sheet resistance of the thin film heater ranges from about 100 to about 600 ohms per square. The thin film heater has a thickness ranging from about 100 to about 800 Angstroms and exhibits improved aluminum/silicon diffusion barrier properties.

Abstract: The disclosure relates to circuits and methods for the manufacture of circuits, such as those which avoid the formation of undesirable short circuit paths. One such method maintains a layout area of a fluid composition receiving layer within a layout area of a dielectric layer. Another such method relates to the application of fluid composition receiving layers, conductive layers, and dielectric layers, such as in the provision of printed circuits.

Abstract: An aqueous composition for forming a micro-fluid jet printable dielectric film layer, methods for forming dielectric film layers, and dielectric film layers formed by the method. The aqueous composition includes from about 5 to about 20 percent by 65 weight of a polymeric binder emulsion, from about 10 to about 30 percent by weight of a humectant, from about 0 to about 3 percent by weight of a surfactant, and an aqueous carrier fluid. The aqueous composition has a viscosity ranging from about 2 to about 6 centipoise at a temperature of about 23° C.

Abstract: Heater chips for a micro-fluid ejection device, such as those having a reduced energy requirement and more efficient production process therefor. One such heater chip includes a resistive layer deposited adjacent to a substrate and a protective layer deposited adjacent to the resistive layer. The protective layer can be a tantalum oxide protective layer which has a high breakdown voltage. An optional cavitation layer of tantalum, which bonds well with the tantalum oxide layer, may be deposited adjacent to the protective layer. Alternatively, for example, the tantalum oxide layer may serve as both the protective layer and the cavitation layer.

Abstract: A substantially planar fluid ejection actuator and methods for manufacturing substantially planar fluid ejection actuators for micro-fluid ejection heads. One such fluid ejection actuator includes a conductive layer adjacent to a substrate that is configured to define an anode segment spaced apart from a cathode segment. A thermal barrier segment is disposed between the anode and cathode segments. A substantially planar surface is defined by the anode segment, and the thermal barrier segment. A resistive layer is applied adjacent to the substantially planar surface.

Abstract: Micro-fluid ejection devices, methods for making a micro-fluid ejection device, and methods for reducing a size of a substrate for a micro-fluid ejection head. One such micro-fluid ejection device has a polymeric layer adjacent a substrate and at least one conductive layer embedded in the polymeric layer. The polymeric layer comprises at least two layers of polymeric material.

Abstract: A method of fabricating a circuit lead, the method comprising: (a) depositing a slurry upon a substrate in a predetermined pattern, the substrate including a plurality of substantially uniformly patterned micropores operative to drain a fluid component of the slurry from the surface of the substrate, while maintaining conductive particles of the slurry on a surface of the substrate; and (b) drying the conductive particles to secure the conductive particles upon a surface of the substrate and provide a circuit lead. The invention also includes an electronic circuit comprising: (a) a substrate including a plurality of micropores that are substantially uniformly patterned; (b) a microchip; and (c) a circuit lead in electrical communication with the microchip and contacting the substrate, the circuit lead comprising conductive particles deposited upon the substrate by ejecting a slurry from an inkjet printer.

Abstract: An integrated circuit having a plurality of devices. The plurality of devices have a plurality of device characteristics. A sectional cut through the integrated circuit reveals the plurality of device characteristics.

Abstract: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.

Abstract: Electronic devices, such as those having a flexible substrate and printed material on the flexible substrate. In one embodiment, the printed material and substrate are part of an electronic device having at least three terminals, wherein the electronic device has a charge carrier mobility of at least 10 cm2/V-s. Multi-terminal devices can have a substrate including a doped semiconductor layer and at least two doped regions formed upon the substrate. The doped regions can be doped oppositely from the semiconductor layer and exhibit a charge carrier mobility of greater than 10 cm2/V-s. Methods for making the same are also disclosed.

Abstract: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.

Abstract: The present disclosure is directed to a micro-fluid ejection head for a micro-fluid ejection device. The head includes a semiconductor substrate, a fluid ejection actuator supported by the semiconductor substrate, a nozzle member containing nozzle holes attached to the substrate for expelling droplets of fluid from one or more nozzle holes in the nozzle member upon activation of the ejection actuator. The substrate further includes a thermal insulating barrier layer between the semiconductor substrate and the fluid ejection actuator. The thermal insulating barrier layer includes a porous, substantially impermeable material having a thermal conductivity of less than about 1 W/m-K.

Abstract: A process for making a fluid ejector head for a micro-fluid ejection device. In one embodiment, the process comprises depositing a thin film resistive layer on a substrate to provide a plurality of thin film heaters. The thin film resistive layer comprises a tantalum-aluminum-nitride material consisting essentially of AlN, TaN, and TaAl alloys, and containing from about 30 to about 70 atomic % tantalum, from about 10 to about 40 atomic % aluminum and from about 5 to about 30 atomic % nitrogen.