Abstract: Systems and methods for identifying and evicting idle sessions include training a machine learning model as a session classifying model to learn rules for classifying active sessions between clients and the cloud-based service. The session classifying model is trained to receive a plurality of parameters pertaining to the document associated with an active session as input and to apply the rules to the plurality of parameters to determine a classification for the active session and to provide an output indicative of the classification for the active session. The session classifying model is then utilized in the cloud-based service to classify the active sessions. The active sessions classified as idle sessions may then be evicted from the cloud-based service.

Abstract: A processing method includes displaying at least two windows in at least two split-screen regions based on a split-screen command, obtaining an input operation for a target window in the at least two windows, determining adjustment parameters of a correlation window related to the target window and among the at least two windows in response to the input operation, and adjusting the correlation window based on the adjustment parameters. The region of each of the at least two windows corresponds to a split-screen region of the at least two split-screen regions. Each of the at least two windows includes an interactive interface. The correlation window before the correlation window adjustment is different from the correlation window after the correlation window adjustment.

Abstract: Disclosed are a thermoforming device and method for a flexible printed circuit board. The thermoforming device may include: a first forming mechanism provided with a first forming portion, the first forming portion being configured to carry the flexible printed circuit board to be processed; a second forming mechanism provided with a second forming portion which matches with the first forming portion, at least one of the first forming portion or the second forming portion is provided with a corresponding heating module configured for heat treatment of the flexible printed circuit board; a first driving mechanism configured to drive the first forming mechanism and the second forming mechanism to be displaced relative to each other in a first direction; a second driving mechanism configured to drive the second forming mechanism and the first forming mechanism to be displaced relative to each other in a second direction perpendicular to the first direction; and a controller.

Abstract: A silica-alumina material, its preparation and application thereof are provided. The silica-alumina material has a SiO2/Al2O3 molar ratio of 0.8-1.5, and has a lamellar structure with an average length of 0.5-2 ?m and an average thickness of 30-80 nm, and its calcined form has a specific XRD pattern. The silica-alumina material has the characteristics of large pore volume, two-stage gradient pore channels of mesopores and macropores, as well as high B acid content as in molecular sieve, and shows crystal characteristics of a molecular sieve, and low impurity content, and thus is suitable for use as a carrier for catalytic materials, particularly a carrier for heavy oil hydrogenation catalysts.

Abstract: Various embodiments of the present technology include an improved system for measuring the impacts of feature rollouts on machine utilization and service performance. More specifically, embodiments of the present technology include an exposure control system based on randomized machine assignments and a corresponding score card for comparing machine utilization metrics. In an embodiment, a computing apparatus identifies a new feature in a codebase, wherein the codebase has been updated with the new feature across multiple resources, enables the new feature for a target group of the multiple resources while keeping the new feature dormant for a control group of the multiple resources, collects performance information for the target group and the control group for a time period, and generates a visualization of one or more differences between the performance information for the target group and the performance information for the control group for the time period.

Abstract: A shell reinforcing structure for a fuel cell humidifier comprises a main body shell, fixed plates and grating mechanisms, wherein the side edges of the main body shell are fixedly connected with the fixed plates, the side edge of the fixed plate is provided with an end cover, the upper part of the end cover on the left side is fixedly connected with a dry air inlet tube, the left side of the upper part of the main body shell is fixedly connected with a moisture outlet tube, the right side of the upper part of the main body shell is fixedly connected with a moisture inlet tube, the upper end of the end cover on the right side is fixedly connected with a dry air outlet tube, fixed holes are formed in the side edge surface of the fixed plate.

Abstract: A sealing structure of a humidifier includes a main structure, a left end cover, and a right end cover. The left end cover and the right end cover are arranged on left and right end faces of the main structure, respectively. A dry air inlet tube is connected to a top end face of the left end cover, and a dry air outlet tube is connected to a top end face of the right end cover. A wet air outlet tube and a wet air inlet tube are connected to left and right sides of a top end face of the main structure, respectively. Membrane tubes are arranged on an inner side of the main structure. Potting resin layers are arranged on both ends of the membrane tubes. High-temperature resistant sealant layers are arranged at connecting portions between each end cover and the main structure.

Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

Abstract: A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

Abstract: A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.

Abstract: A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.

Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

Abstract: A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.