Patents by Inventor Yin-Lan Chang

Yin-Lan Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Material systems for semiconductor tunnel-junction structures
    Patent number: 6765238
    Abstract: The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
    Type: Grant
    Filed: September 12, 2002
    Date of Patent: July 20, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Yin-Lan Chang, Ashish Tandon, Michael H. Leary, Michael R. T. Tan