Abstract: Liquid crystal display panels are provided. In the display panel, a first polarization direction of a first polarizer is perpendicular to a second polarization direction of a second polarizer; each pixel unit includes a pixel electrode including a trunk electrode, the trunk electrode includes a first and a second trunk electrodes disposed along a first direction and a second direction, respectively; an angle between the first direction and the first polarization direction is different from a right angle; the trunk electrode defines an area where the pixel unit is located as four domains, each domain is provided with branch electrodes; the branch electrodes in adjacent domains arranged in a row direction form a first angle and a second angle with the first polarization direction respectively, the first angle ranges from 0 to 30 degrees, and the second angle ranges from 60 degrees to 90 degrees.

Abstract: The present invention provides a method of growing a single-crystal silicon, comprising: loading a batch of polysilicon material in a crucible of a furnace, heating the crucible to melt the polysilicon material into a mass of silicon melt, confirming a liquid surface of the mass of silicon melt, applying a superconducting magnetic field to the mass of silicon melt with a magnetic field generator and adjusting a position of the magnetic field generator to position a maximum point of the superconducting magnetic field within a predetermined range under the liquid surface, and dipping a seed crystal into the silicon melt, and pulling the seed crystal during rotation of the seed crystal to crystallize the single crystal under the seed crystal until forming an ingot of single-crystal silicon. Oxygen content in the ingot is controlled through positioning the maximum point of the superconducting magnetic field under the liquid surface.