Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: An electronic load for a semiconductor element is provided. The electronic load includes at least two slope generating circuits, each of which generates a current according to a current for the electronic load corresponding to an output voltage of a power supply. Each slope generating circuit comprises at least a first slope generating circuit that simulates a first slope when the output voltage of the power supply is between 0V to a rated voltage, and a second slope generating circuit that simulates a second slope when the output voltage of the power supply is higher than the conducting state voltage of the semiconductor element by subtracting the forward bias voltage from the output voltage of the power supply.

Abstract: A saved power measuring circuit comprises a control unit, a clock signal generating circuit connected to the control unit for generating a clock signal to the control unit, a power consumption measuring circuit connected to a power supply loop for measuring the power consumption of an electric appliance load operated in operation mode, a power consumption memory unit connected to the control unit for memorizing the power consumption, a break loop status signal generating circuit for generating a break loop status signal to the control unit. When the control unit receives the break loop status signal generated from the break loop status signal generating circuit, it calculates saved power of the electric appliance load in power saving mode according to the power consumption and the lasting time after receiving the break loop status signal.

Abstract: An electronic load for a semiconductor element is provided. The electronic load includes at least two slope generating circuits, each of which generates a current according to a current for the electronic load corresponding to an output voltage of a power supply. Each slope generating circuit comprises at least a first slope generating circuit that simulates a first slope when the output voltage of the power supply is between 0V to a rated voltage, and a second slope generating circuit that simulates a second slope when the output voltage of the power supply is higher than the conducting state voltage of the semiconductor element by subtracting the forward bias voltage from the output voltage of the power supply.

Abstract: A smart electronic connecting device applicable to control the electronic connection between an external power supply and an external electronic connector includes an input unit connected to the external power supply, a processing module, a mode generation unit, an output unit and a relay unit connected between the input unit and the output unit. The processing module has a timing generation unit generating a timing signal, a control unit generating a control signal, and a memory unit. The mode generation unit generates multiple mode selecting signals to the control unit. The output unit is to connected to the external electronic connector. The relay unit is turned on/off selectively according to the control signal of the control unit to conduct the input unit and the output unit, wherein the memory unit records the turn-on connection status of the relay unit within the predetermined period to recur the turn-on connection status.

Abstract: A control circuit is provided for a power-saving socket and includes a central processing unit, a relay, a sensor unit, a time counting unit, a standby current setting unit, and a current monitoring unit. The central processing unit, upon receiving a human approaching signal from the sensor unit, issues a control signal to the relay to switch a contact of the relay to a closed condition, whereby an electrical appliance plugged to the socket is allowed to operate. When the electrical appliance plugged to the socket stays in a standby mode, the central processing unit receives a current value from the current monitoring unit, which is equal to or smaller than an appliance standby current level, and the time counting unit starts time counting for a specific period of time.

Abstract: An electrical socket apparatus with over-current protection is disclosed, including at least two sockets, at least one breaker switch, a current detection unit and a microprocessor. The sockets are coupled in parallel to a power system. The breaker switch is installed in the path of one of the sockets coupled to the power system for breaking or connecting the path of the sockets to the power system. The current detection unit detects the current flowing into the sockets and outputs a set of current values. The microprocessor is coupled to the current detection unit for receiving the set of current values, determining whether a total current flowing into the sockets exceeds a current threshold value and breaking the breaker switch according to a predetermined breaking data when total current flowing into the sockets exceeds the current threshold value.

Abstract: An electronic tag testing device and method includes a feeding mechanism, a retaining mechanism and an R/W system.

Abstract: A hand-held tester includes a testing kit and a measuring machine, wherein the testing kit has, mounted thereon, a wave absorbing material, an emitting antenna, and a RFID tag. The wave absorbing material is mounted around the inner side of the testing kit, and the emitting antenna and the RFID tag are disposed at the opposite sides of the testing kit, and further, the measuring machine and the testing kit are electrically connected, thereby a benefit way to find the best position for adhering the RFID tag can be achieved.

Abstract: An electronic tagged box comprises a box body; a buffer layer mounted inside the box body; an absorber mounted on one side of the buffer layer; and a RFID tag mounted outside the box body corresponding to the buffer layer, whereby receiving distance and range of the RFID tag can be increased.

Abstract: An electronic tagged box comprises a box body; a buffer layer mounted inside the box body; an absorber mounted on one side of the buffer layer; and a RFID tag mounted outside the box body corresponding to the buffer layer, whereby receiving distance and range of the RFID tag can be increased.