Abstract: An electrostatic dust collection apparatus and an air purifier including such the electrostatic dust collection apparatus are provided. The electrostatic dust collection apparatus of the invention includes a sheet collection electrode, an insulative bearing member and a plurality of discharge electrodes. A first surface of the sheet collection electrode faces and is parallel to a second surface of the insulative bearing member. A plurality of grooves are formed on and across the second surface of the insulative bearing member, and are parallel to one another. Each discharge electrode corresponds to one of the grooves, and is disposed in the corresponding groove. An air passage is defined between the sheet collection electrode and the insulative bearing member, and allows an air to be treated to pass through. The discharge electrodes charge a plurality of floating particles in the air to be treated. The sheet collection electrode collects the charged particles.

Abstract: An air purifier includes a housing providing an air path therein, a photocatalyst module disposed in the air path, and an electrostatic dust collector disposed in the air path. The photocatalyst module includes a UV point light source emitting light along a light path, and a photocatalyst net device including at least one spatially curved member disposed in the light path, and having a configuration defined by a specific contour line of equal intensity of the emitted light. The electrostatic dust collector includes a first electrode device and a second electrode device, which have contrary electrical polarities so as to generate an electric field therebetween, and both of which have graphene on surfaces thereof.

Abstract: A LED module with separate heat-dissipation and electrical conduction paths is disclosed, having a metal substrate; a plastic layer, including one or more hollow regions, and attached to the metal substrate; one or more conducting elements attached to the plastic layer; one or more LED chips positioned in the one or more hollow regions of the plastic layer and directly attached to the metal substrate; and a plurality of conducting wires for electrically connecting the one or more conducting elements and the one or more LED chips; wherein inner sides of the one or more hollow regions include one or more inclined surfaces each having an included angle with an upper surface of the metal substrate, and the included angle is between 90˜180 degrees.

Abstract: A LED module with separate heat-dissipation and electrical conduction paths is disclosed, having a metal substrate; a plastic layer, comprising one or more hollow regions, and attached to the metal substrate; one or more conducting elements attached to the plastic layer; one or more LED chips positioned in the one or more hollow regions of the plastic layer and directly attached to the metal substrate; and a plurality of conducting wires for electrically connecting the one or more conducting elements and the one or more LED chips; wherein inner sides of the one or more hollow regions comprise one or more inclined surfaces each having an included angle with an upper surface of the metal substrate, and the included angle is between 90-180 degrees.

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.

Abstract: A method for manufacturing the light emitting diode utilizing the metal substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a multi-layered semiconductor structure on the growing substrate, bonding a metal substrate to the multi-layered semiconductor structure, removing the growing substrate, and forming a first electrode and a second electrode on the multi-layered semiconductor structure and the metal substrate respectively.

Abstract: A method for manufacturing the light emitting diode utilizing the transparent substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a semiconductor structure on the growing substrate, forming a metal bonding layer on the semiconductor structure, bonding a transparent substrate to the semiconductor structure via the metal bonding layer, removing the growing substrate, and forming a first electrode and a second electrode on the semiconductor structure and the transparent substrate respectively.

Abstract: A light emitting device includes a substrate, an n-type semiconductor layer and a p-type semiconductor layer formed on the surface of the substrate, an n-electrode formed on the n-type semiconductor layer, an evenly spread ohmic contact layer formed on the p-type semiconductor layer in the form of evenly spread dots, a net, or a honeycomb, and a transparent conducting layer selected from ITO or ZnO and covered on the ohmic contact layer.

Abstract: A blue LED epitaxial wafer grown on an Al2O3 substrate, the blue LED epitaxial wafer having a contact electrode on the bottom side after removal of the Al2O3 substrate, conducting terminals formed on the top side, and a substitute substrate selected from chrome, tungsten, molybdenum, copper, copper chrome alloy, copper molybdenum alloy, copper tungsten alloy, molybdenum tungsten alloy, or their combination alloy and bonded to the top side and connected to the conducting terminals.

Abstract: A method for manufacturing the light emitting diode utilizing the metal substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a multi-layered semiconductor structure on the growing substrate, bonding a metal substrate to the multi-layered semiconductor structure, removing the growing substrate, and forming a first electrode and a second electrode on the multi-layered semiconductor structure and the metal substrate respectively.

Abstract: A method for manufacturing the light emitting diode utilizing the transparent substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a semiconductor structure on the growing substrate, forming a metal bonding layer on the semiconductor structure, bonding a transparent substrate to the semiconductor structure via the metal bonding layer, removing the growing substrate, and forming a first electrode and a second electrode on the semiconductor structure and the transparent substrate respectively.

Abstract: A light emitting diode and manufacturing method thereof. The light emitting diode comprises a n-type semiconductor layer formed on a substrate, an active layer formed on the n-type semiconductor layer, a p-type cladding layer formed on the active layer, and a hydrogen-adsorbing layer formed on the p-type cladding layer. The hydrogen-adsorbing layer adsorbs the hydrogen atoms near the interface to the p-type cladding layer, thereby enhancing the doping concentration of p-type cladding layer, and forming a low-resist ohmic contact by which the performance and reliability of opto-electronic devices is improved.

Abstract: An electrode structure of compound semiconductor device. The compound semiconductor device has a substrate, an n-type layer over entire substrate, a mesa-like p-type layer on partial surface of the n-type layer, a transparent conductive layer on the mesa-like p-type layer; a p-contact formed on the transparent conductive layer and an n-contact formed on the exposed n-type layer. The n-contact comprises an enclosure portion compassing the p-contact, whereby the current flowed from the p-contact to the n-contact is uniform.

Abstract: The present invention proposes a method of producing a gallium nitride-based III-V Group compound semiconductor device. First, beryllium ions are diffused into the p-type layer of gallium nitride to increase hole mobility. Contacts are then added in subsequent procedures, thereby forming contacts having low-impedance ohmic contact layers.