Abstract: A method for silicon carbide ingot peeling includes the steps of: placing the silicon carbide ingot between first and second suckers; having a pressing head disposed on a top surface of the first sucker to apply mechanical oscillatory energy to both the silicon carbide ingot and the second sucker through the first sucker; and, having an elastic element disposed under the second sucker to absorb part of the mechanical oscillatory energy to transmit longitudinal waves thereof to a modified layer of the silicon carbide ingot for propagating individually intermittent invisible cracks at the modified layer to break silicon carbide chains at different levels. Till the cracks connect together for forming a continuous crack across the silicon carbide ingot, a top portion of the silicon carbide ingot is then separable therefrom to form a wafer. In addition, an apparatus for silicon carbide ingot peeling is also provided.

Abstract: The present invention provides a wireless communication method of an electronic device, wherein the electronic device includes a first radio and a second radio, a maximum bandwidth or a maximum. NSS supported by the first radio is different from a maximum bandwidth or a maximum NSS supported by the second radio. The wireless communication method includes the step of: using the first radio to communicate with another electronic device; determining if parameters of the electronic device satisfy a condition; and in response to the parameters of the electronic device satisfying the condition, enabling the second radio and using the second radio to communicate with the another electronic device, and disabling the first radio.

Abstract: The present invention relates to a plasma processing device, comprising: an upper electrode has a plurality of protruding posts which made by conducting material and protruded out of one surface of the upper electrode and connected to a plasma producing source and formed a plurality of circles that around a center, each circle has at least one protruding post, the surface of the upper electrode that has protruding posts is covered with dielectric material, a plurality of gas holes disposed between protruding posts and connected to working gas source; a rotatable lower electrode is made of conducting material and covered with dielectric material which has a carry surface facing the surface of the upper electrode that has protruding posts for carrying workpiece.

Abstract: A modular electrode device comprises a plurality of main bodies, a first electrode, at least one second electrode, at least one first connecting member and two second connecting members. Each main body has a side edge, an internal chamber and a gas inlet communicative in space between the chamber and the atmosphere. The first electrode is mounted at the side edge of one main body, while the in-serial second electrodes connected to one end of the first electrode are mounted at the side edges of the other main bodies. The main bodies are separated by the parallel third electrodes. The third, the second and the third electrodes are connected to each other. The first connecting member bridges in-serially the first electrode and the neighboring second electrode. The second connecting members are applied to both opposing end of the in-serial combination of the first and the second electrodes.

Abstract: A plasma deposition apparatus including a plasma generation unit and a droplet separation unit is provided. The plasma generation unit includes an inlet end and an outlet end. The droplet separation unit is located at the inlet end. Besides, the droplet separation unit includes a first chamber, an import port, and a connection port. The import port and the connection port are connected to the first chamber. The connection port is connected to the inlet end, and the import port serves to receive an atomized precursor. The atomized precursor is separated into a first portion and a second portion after entering the first chamber, and droplets of the first portion are smaller than droplets of the second portion. The first portion of the atomized precursor is suitable for entering the inlet end through the connection port.

Abstract: A method for deposition of a selenium thin-film includes the following steps. First, a plasma head is provided. Then, a substrate is supported in an atmospheric pressure. Next, a solid-state selenium source is dissociated by the plasma head to deposit the selenium thin-film on the substrate. The plasma head includes a chamber, a housing and the solid-state selenium source. Plasma is produced in the chamber. The chamber is surrounded by the housing. The solid-state selenium source is supported by the housing.

Abstract: A liquid crystal (LC) alignment system includes an alignment film having a single or plurality of liquid crystal molecules aligned by a plurality of plasma generating devices, such that the liquid crystal molecules are aligned at a stable pretilt angle. Compared with the prior art, the present invention is suitable for modifying the alignment film surface by adjusting directions and angles of the liquid crystal molecules, and can attain the effect of alignment stability with a pretilt angle in a single process, thus overcoming the drawbacks of the prior art.

Abstract: A fabrication method for an alignment film is proposed. A film is deposited on a substrate by an atmosphere plasma in a predetermined direction at a predetermined angle, while moving the substrate and the atmosphere plasma relative to each other. Thereby, a uniform isotropic alignment film with strong anchoring energy is formed and the pre-tilt angle can be designed according to the need. Problems such as static charge and dust generated during a conventional rubbing process are prevented. In addition, since the above fabrication method eliminates the need of vacuum devices that are required in conventional ion beam alignment and plasma beam alignment processes, the fabrication method can be used to fabricate large sized alignment film. Moreover, fabrication cost is lowered through the use of the fabrication method.

Abstract: An ejector with multi-ejection pins is used in the post-processes of the semiconductor industry and is used by a selection device to choose a predetermined quantity of ejection pins. When a propelling device lifts the selection device, a pin-base vertical driver controls the vertical motion of a pin base, and a pin-base motion device controls the planar motion of the pin base; the chosen ejection pins can be lifted to elevate the respective dies for separation from adhesive film.

Abstract: An ejector with multi-ejection pins is used in the post-processes of the semiconductor industry and is used by a selection device to choose a predetermined quantity of ejection pins. When a propelling device lifts the selection device, a pin-base vertical driver controls the vertical motion of a pin base, and a pin-base motion device controls the planar motion of the pin base; the chosen ejection pins can be lifted to elevate the respective dies for separation from adhesive film.