Abstract: The present invention relates to the field of fluid heat transfer, and discloses a heat transfer enhancement pipe as well as a cracking furnace and an atmospheric and vacuum heating furnace including the same. The heat transfer enhancement pipe (1) includes a pipe body (10) of tubular shape having an inlet (100) for entering of a fluid and an outlet (101) for said fluid to flow out; internal wall of the pipe body (10) is provided with a fin (11) protruding towards interior of the pipe body (10), the fin (11) spirally extends in an axial direction of the pipe body (10), wherein a height of the fin (11) gradually increases from one end in at least a part extension of the fin. The heat transfer enhancement pipe can reduce thermal stress of itself, thereby increasing service life of the heat transfer enhancement pipe.

Abstract: A semiconductor device includes a substrate. The semiconductor device also includes a semiconductor layer disposed in the substrate. The semiconductor device further includes a first dielectric layer disposed on the semiconductor layer. The semiconductor device includes a second dielectric layer disposed on the first dielectric layer. The semiconductor device also includes a pair of thermopile segments disposed on the second dielectric layer. The first dielectric layer and the second dielectric layer form a chamber.

Abstract: A molecular sieve of MFI structure has a ratio of n(SiO2)/n(Al2O3) of more than 15 and less than 70. It has a content of phosphorus of 1-15 wt %, calculated as P2O5 and based on the dry weight of the molecular sieve and a content of the supported metal in the molecular sieve 1-10 wt % based on the oxide of the supported metal and the dry weight of the molecular sieve. The supported metal is one or two selected from lanthanum and cerium. The volume of mesopores in the molecular sieve represents 40-70% by volume of the total pore volume of the molecular sieve by volume, measured by a nitrogen adsorption BET specific surface area method, and the volume of mesopores means the pore volume of the pores having a diameter of more than 2 nm and less than 100 nm.

Abstract: Methods for forming via last through-vias. A method includes providing an active device wafer having a front side including conductive interconnect material disposed in dielectric layers and having an opposing back side; providing a carrier wafer having through vias filled with an oxide extending from a first surface of the carrier wafer to a second surface of the carrier wafer; bonding the front side of the active device wafer to the second surface of the carrier wafer; etching the oxide in the through vias in the carrier wafer to form through oxide vias; and depositing conductor material into the through oxide vias to form conductors that extend to the active carrier wafer and make electrical contact to the conductive interconnect material. An apparatus includes a carrier wafer with through oxide vias extending through the carrier wafer to an active device wafer bonded to the carrier wafer.

Abstract: An electronic smoke comprises a puff detection sub-assembly module. The puff detection sub-assembly comprises a first conductive surface, a second conductive surface and an insulated ring spacer separating the first and the second conductive surfaces at an effective separation distance. The first conductive surface, the second conductive surface and the insulated ring spacer are housed inside a metallic can. The first conductive surface is electrically connected to the metal can by a first conductive ring which is disposed between the first conductive surface and a ceiling portion of the metal can. The second conductive surface is electrically connected to an output terminal through a second conductive ring, the second conductive ring elevating the puff detection sub-assembly above a floor portion of the metal can and urging the first conductive ring against a ceiling portion of the metal can.

Abstract: The present disclosure provides a superhydrophobic and self-cleaning anticoagulant composite coating material and a preparation method and use thereof, and relates to the technical field of biomedical materials. In the coating material provided by the present disclosure, a titanium dioxide nanotube-based structure increases microscopic roughness of a surface of a titanium-based metal substrate, and a hydrophobic modification layer reduces surface energy of the material. The rough structure and the hydrophobic modification layer have a synergistic effect to construct a superhydrophobic surface, making the surface of the material have self-cleaning characteristics and low adhesion. Air can be retained on the surface of the material to form an air layer, thereby reducing the contact area between the material and bacteria and platelets in the blood, and inhibiting adhesion of the bacteria, platelets, and plasma proteins to the material.

Abstract: Two types of blue light blocking contact lenses are provided and are formed by curing different compositions. The first composition includes a blue light blocking component formed by mixing or reacting a first hydrophilic monomer and a yellow dye, a first colored dye component formed by mixing or reacting a second hydrophilic monomer and a first colored dye, at least one third hydrophilic monomer, a crosslinker, and an initiator. The first colored dye includes a green dye, a cyan dye, a blue dye, an orange dye, a red dye, a black dye, or combinations thereof. The second composition includes a blue light blocking component, at least one hydrophilic monomer, a crosslinker, and an initiator. The blue light blocking component is formed by mixing or reacting glycerol monomethacrylate and a yellow dye. Further, methods for preparing the above contact lenses are provided.

Abstract: In the method, a server not only obtains a first web page request of a first terminal apparatus, but also obtains first energy consumption information of the first terminal apparatus. After determining first web page content corresponding to the first web page request, the server may select, from first web page elements included in the first web page content, a second web page element whose needed energy consumption is not greater than energy consumption indicated by the first energy consumption information, and transmit second web page content including the second web page element to the first terminal apparatus, to enable the first terminal apparatus to display the second web page content.

Abstract: In method of manufacturing a semiconductor device, a source/drain epitaxial layer is formed, one or more dielectric layers are formed over the source/drain epitaxial layer, an opening is formed in the one or more dielectric layers to expose the source/drain epitaxial layer, a first silicide layer is formed on the exposed source/drain epitaxial layer, a second silicide layer different from the first silicide layer is formed on the first silicide layer, and a source/drain contact is formed over the second silicide layer.

Abstract: A semiconductor device includes a first metal layer, a second metal layer, and an inter-metal dielectric layer disposed between the first metal layer and the second metal layer. The inter-metal dielectric layer includes: a first dielectric layer disposed on the first metal layer and in direct contact with the first metal layer, wherein the first dielectric layer has a stress value less than 0; a second dielectric layer disposed on the first dielectric layer, wherein the second dielectric layer has a stress value greater than 0; and a third dielectric layer disposed on the second dielectric layer, wherein the third dielectric layer has a stress value less than 0. A thickness of the third dielectric layer is greater than a thickness of the second dielectric layer, and the thickness of the second dielectric layer is greater than a thickness of the first dielectric layer.

Abstract: The present disclosure discloses a method for quantifying a bearing capacity of foundation containing shallow-hidden spherical cavities, comprising: in Step 1, constructing a spatial axisymmetric calculation model for stability analysis of the foundation containing shallow-hidden spherical cavities; in Step 2, solving the model to obtain a general solution which reflects the spatial stress distribution of surrounding rock containing shallow-hidden spherical cavities; in Step 3, obtain a mathematical expression by derivation for calculating the bearing capacity of the foundation containing shallow-hidden spherical cavities; and in Step 4: completing the determination of the foundation bearing capacity. Benefits: This method has many advantages such as comprehensive consideration, high accuracy and reliability of calculation results, and may provide the scientific basis for the development of prevention and control against the instability of the foundation containing shallow-hidden cavities.

Abstract: Methods for manufacturing a display device are provided. The methods include providing a plurality of light-emitting units and a substrate. The methods also include transferring the light-emitting units to a transfer head. The methods further include attaching at least one of the plurality of light-emitting units on the transfer head to the substrate by a bonding process, wherein the transfer head and the substrate satisfy the following equation during the bonding process: 0 ? ? ? T ? ? 1 T ? ? 2 ? A ? ( T ) ? dT - ? T ? ? 1 T ? ? 3 ? E ? ( T ) ? dT ? ? < 0.01 wherein A(T) is the coefficient of thermal expansion of the transfer head, E(T) is the coefficient of thermal expansion of the substrate, T1 is room temperature, T2 is the temperature of the transfer head, and T3 is the temperature of the substrate.

Abstract: A reading device for capacitive sensing element comprises a differential capacitive sensing element, a modulator, a charge-voltage conversion circuit, a phase adjustment circuit, a demodulator and a low-pass filter. The modulator outputs a modulation signal to the common node of the capacitive sensing element and modulates the output signal of the capacitive sensing element. The two input terminals of the charge-to-voltage conversion circuit are connected to two non-common nodes of the capacitive sensing element. The charge-to-voltage converter read the output charge of the capacitive sensing element and convert it into a voltage signal. The modulator generates a demodulation signal through the phase adjustment circuit. The demodulator receives the demodulation signal from the phase adjustment circuit and demodulates the output of the charge-to-voltage conversion circuit. The low-pass filter is connected to the output of the demodulator for filtering the demodulated voltage signal to output the read signal.

Abstract: Provided is a method and system for predicting a height of a confined water rising zone. The method includes: obtaining sample data; dividing the sample data into a training sample and a test sample; calculating a degree of correlation between a height and a correlation factor value sequence; screening correlation factors according to the degree of correlation to obtain screened correlation factors; calculating weights of the screened correlation factors using an entropy weight method (EWM); obtaining standardized screened correlation factor value sequences according to correlation factor value sequences corresponding to the screened correlation factors; calculating a value of each indicator according to the standardized screened correlation factor value sequences and the weights; and obtaining a height prediction model of a confined water rising zone based on principal component analysis (PCA)-particle swarm optimization (PSO)-support vector regression (SVR), the value of each indicator, and the test sample.

Abstract: A fitness device includes two support frames mounted in a box, two driving motors mounted on the two support frames, a pull rope reel connected to the driving motors, a fitness pull rope wound around the pull rope reel and extending out of the box, and a control system for controlling the driving motors. The control system includes a main controller, a power module, a communication module connected to the main controller, a driving circuit and a sampling module electrically connected to the driving motors and the main controller. The power module is electrically connected to the main controller and the communication module. The driving circuit is electrically connected to the power module, the main controller and the driving motors. The two symmetrical driving motors are used to drive the pull rope reel to drive the fitness pull rope, such that shakes and vibrations generated during exercise can be offset.

Abstract: A fingerprint spectrum construction method for Xihuang capsules and a fingerprint spectrum includes: S1: taking contents of a Xihuang capsule, adding a methanol-chloroform-phosphoric acid solution, and carrying out ultrasonic extraction to obtain a Xihuang capsule test solution; S2: dissolving cholic acid, hyodeoxycholic acid, deoxycholic acid, bilirubin, muscone, and myrrhone in ethanol to obtain a mixed standard solution 1; dissolving quassin, 11-carbonyl-?-boswellic acid, 11-carbonyl-?-acetyl-boswellic acid, acetyl-11?-methoxy-?-boswellic acid, and sandaracopimaric acid in methanol to obtain a mixed standard solution 2; S3: respectively carrying out chromatography on the Xihuang capsule test solution and the mixed standard solutions 1 and 2, and recording corresponding chromatograms; and S4: constructing a fingerprint spectrum of the Xihuang capsule according to the chromatogram of the Xihuang capsule test solution and the chromatograms of the mixed standard solutions 1 and 2.

Abstract: Provided are a display panel, a driving method of a display panel, and a display device. The display panel includes a first display region and a second display region. A working process of the display panel includes a first mode. In the first mode, a data refresh rate of the first display region is F11, a data refresh rate of the second display region is F21, and F11?F21. In the first mode, a driving parameter of the first display region is different from a driving parameter of the second display region, the driving parameter of the first display region is used for controlling brightness of the first display region, and the driving parameter of the second display region is used for controlling brightness of the second display region.

Abstract: A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.

Abstract: A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, a first deep well region, at least two second well regions, at least one isolation structure and an implantation region. The first deep well region is disposed in the semiconductor substrate, wherein the first deep well region has a first conductivity type. The second well regions are disposed on the first deep well region, wherein the second well regions have a second conductivity type. The isolation structure covers a portion of the first deep well region and surrounds at least a portion of the second well regions. The implantation region is located under a top surface of the semiconductor substrate, wherein the implantation region has a discontinuous portion, and the discontinuous portion partially overlaps the first deep well region.

Abstract: A method includes receiving a wafer, measuring a surface topography of the wafer; calculating a topographical variation based on the surface topography measurement performing a single-zone alignment compensation when the topographical variation is less than a predetermined value or performing a multi-zone alignment compensation when the topographical variation is greater than the predetermined value; and performing a wafer alignment according to the single-zone alignment compensation or the multi-zone alignment compensation.