Patents by Inventor Ying-Ti Lu

Ying-Ti Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stress reduction apparatus with an inverted cup-shaped layer
    Patent number: 10290576
    Abstract: A device comprises a metal via having a lower portion in a first etch stop layer and an upper portion in a first dielectric layer over a substrate, a second etch stop layer over and in direct contact with the first dielectric layer, a second dielectric layer over and in direct contact with the first etch stop layer, a stress reduction layer over and in direct contact with the second dielectric layer, a third etch stop layer over and in direct contact with the stress reduction layer and a metal structure over the metal via, wherein the metal structure comprises a lower portion in the second etch stop layer and the second dielectric layer and an upper portion in the stress reduction layer.
    Type: Grant
    Filed: January 3, 2018
    Date of Patent: May 14, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ying-Ti Lu, Wen-Tsao Chen, Ming-Ray Mao, Kuan-Chi Tsai
  • Stress Reduction Apparatus
    Publication number: 20180145025
    Abstract: A device comprises a metal via having a lower portion in a first etch stop layer and an upper portion in a first dielectric layer over a substrate, a second etch stop layer over and in direct contact with the first dielectric layer, a second dielectric layer over and in direct contact with the first etch stop layer, a stress reduction layer over and in direct contact with the second dielectric layer, a third etch stop layer over and in direct contact with the stress reduction layer and a metal structure over the metal via, wherein the metal structure comprises a lower portion in the second etch stop layer and the second dielectric layer and an upper portion in the stress reduction layer.
    Type: Application
    Filed: January 3, 2018
    Publication date: May 24, 2018
    Inventors: Ying-Ti Lu, Wen-Tsao Chen, Ming-Ray Mao, Kuan-Chi Tsai
  • Stress reduction apparatus
    Patent number: 9865534
    Abstract: A device comprises a metal via having a lower portion in a first etch stop layer and an upper portion in a first dielectric layer over a substrate, a second etch stop layer over and in direct contact with the first dielectric layer, a second dielectric layer over and in direct contact with the first etch stop layer, a stress reduction layer over and in direct contact with the second dielectric layer, a third etch stop layer over and in direct contact with the stress reduction layer and a metal structure over the metal via, wherein the metal structure comprises a lower portion in the second etch stop layer and the second dielectric layer and an upper portion in the stress reduction layer, wherein a top surface of the metal structure is level with a top surface of the stress reduction layer.
    Type: Grant
    Filed: June 13, 2016
    Date of Patent: January 9, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ying-Ti Lu, Wen-Tsao Chen, Ming-Ray Mao, Kuan-Chi Tsai
  • Stress Reduction Apparatus
    Publication number: 20160300794
    Abstract: A device comprises a metal via having a lower portion in a first etch stop layer and an upper portion in a first dielectric layer over a substrate, a second etch stop layer over and in direct contact with the first dielectric layer, a second dielectric layer over and in direct contact with the first etch stop layer, a stress reduction layer over and in direct contact with the second dielectric layer, a third etch stop layer over and in direct contact with the stress reduction layer and a metal structure over the metal via, wherein the metal structure comprises a lower portion in the second etch stop layer and the second dielectric layer and an upper portion in the stress reduction layer, wherein a top surface of the metal structure is level with a top surface of the stress reduction layer.
    Type: Application
    Filed: June 13, 2016
    Publication date: October 13, 2016
    Inventors: Ying-Ti Lu, Wen-Tsao Chen, Ming-Ray Mao, Kuan-Chi Tsai
  • Stress reduction apparatus
    Patent number: 9373536
    Abstract: A stress reduction apparatus comprises a metal structure formed over a substrate, an inter metal dielectric layer formed over the substrate, wherein a lower portion of the metal structure is embedded in the inter metal dielectric layer and an inverted cup shaped stress reduction layer formed over the metal structure, wherein an upper portion of the metal structure is embedded in the inverted cup shaped stress reduction layer.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: June 21, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ying-Ti Lu, Wen-Tsao Chen, Ming-Ray Mao, Kuan-Chi Tsai
  • Stress Reduction Apparatus
    Publication number: 20140106563
    Abstract: A stress reduction apparatus comprises a metal structure formed over a substrate, an inter metal dielectric layer formed over the substrate, wherein a lower portion of the metal structure is embedded in the inter metal dielectric layer and an inverted cup shaped stress reduction layer formed over the metal structure, wherein an upper portion of the metal structure is embedded in the inverted cup shaped stress reduction layer.
    Type: Application
    Filed: December 20, 2013
    Publication date: April 17, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ying-Ti Lu, Wen-Tsao Chen, Ming-Ray Mao, Kuan-Chi Tsai
  • Stress reduction apparatus with an inverted cup-shaped layer
    Patent number: 8629559
    Abstract: A stress reduction apparatus comprises a metal structure formed over a substrate, an inter metal dielectric layer formed over the substrate, wherein a lower portion of the metal structure is embedded in the inter metal dielectric layer and an inverted cup shaped stress reduction layer formed over the metal structure, wherein an upper portion of the metal structure is embedded in the inverted cup shaped stress reduction layer.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: January 14, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ying-Ti Lu, Wen-Tsao Chen, Ming-Ray Mao, Kuan-Chi Tsai
  • Stress Reduction Apparatus
    Publication number: 20130207264
    Abstract: A stress reduction apparatus comprises a metal structure formed over a substrate, an inter metal dielectric layer formed over the substrate, wherein a lower portion of the metal structure is embedded in the inter metal dielectric layer and an inverted cup shaped stress reduction layer formed over the metal structure, wherein an upper portion of the metal structure is embedded in the inverted cup shaped stress reduction layer.
    Type: Application
    Filed: February 9, 2012
    Publication date: August 15, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ying-Ti Lu, Wen-Tsao Chen, Ming-Ray Mao, Kuan-Chi Tsai