Abstract: The invention relates to the field of medicinal chemistry, in particular to a substituted diaryl compound shown as a formula (I), a preparation method of the substituted diaryl compound, a medicinal preparation containing the substituted diaryl compound and medical application of the substituted diaryl compound. Pharmacological test results show that the substituted diaryl compound disclosed by the invention has a good inhibition effect on cells of human lung cancer (A549), human ovarian cancer (SKOV3), human melanoma (A375) and human colon cancer (LOVO).

Abstract: A method for silicon carbide ingot peeling includes the steps of: placing the silicon carbide ingot between first and second suckers; having a pressing head disposed on a top surface of the first sucker to apply mechanical oscillatory energy to both the silicon carbide ingot and the second sucker through the first sucker; and, having an elastic element disposed under the second sucker to absorb part of the mechanical oscillatory energy to transmit longitudinal waves thereof to a modified layer of the silicon carbide ingot for propagating individually intermittent invisible cracks at the modified layer to break silicon carbide chains at different levels. Till the cracks connect together for forming a continuous crack across the silicon carbide ingot, a top portion of the silicon carbide ingot is then separable therefrom to form a wafer. In addition, an apparatus for silicon carbide ingot peeling is also provided.

Abstract: This application provides a face living body detection method performed by a computing device, the method including: obtaining a first face image of a target detection object in a first illumination condition and a second face image of the target detection object in a second illumination condition, determining a difference image according to the two images, decoupling an object reflectivity and an object normal vector corresponding to the target detection object from a feature map extracted from the difference image, and determining whether the target detection object is a living body according to the object reflectivity and the object normal vector. This method decouples texture information and depth information of a face, and performs living body detection by using decoupled information, which increases the defense capability against 3D attacks, thereby effectively defending against planar attacks and 3D attacks.

Abstract: Disclosed is a pyridazinone compound represented by Formula (I), or a pharmaceutically acceptable salt, prodrug, hydrate, solvate, polymorph, stereoisomer, or isotopic variant thereof. The compound can be used for preparation of medicinal products for treatment and/or prophylaxis of a disease or condition associated with thyroid hormone abnormalities. The compound has higher selectivity to TH?, better pharmacokinetic parameters, desired stability, and higher agonistic activity toward TH?.

Abstract: A method includes receiving a wafer, measuring a surface topography of the wafer; calculating a topographical variation based on the surface topography measurement performing a single-zone alignment compensation when the topographical variation is less than a predetermined value or performing a multi-zone alignment compensation when the topographical variation is greater than the predetermined value; and performing a wafer alignment according to the single-zone alignment compensation or the multi-zone alignment compensation.

Abstract: A semiconductor device includes first and second metal-insulator-metal structures. The first metal-insulator-metal structure includes a first bottom conductor plate, a first portion of a first dielectric layer, a first middle conductor plate, a first portion of a second dielectric layer, and a first top conductor plate stacked up one over another. The second metal-insulator-metal structure includes a second bottom conductor plate, a second portion of the first dielectric layer, a second middle conductor plate, a second portion of the second dielectric layer, and a second top conductor plate stacked up one over another. In a cross-sectional view, the first bottom conductor plate is wider than the first middle conductor plate that is wider than the first top conductor plate, and the second bottom conductor plate is narrower than the second middle conductor plate that is narrower than the first top conductor plate.

Abstract: The present disclosure belongs to the technical field of semiconductors, and provides a light-emitting diode epitaxial wafer, a growth method therefor, and a light-emitting diode chip. The growth method comprises: placing a sapphire substrate into a reaction chamber; introducing a reaction gas into the reaction chamber, and forming a plurality of GaN crystal nuclei containing In atoms on the surface of the sapphire substrate; growing at least one composite layer on the GaN crystal nuclei, the GaN crystal nuclei growing to form a buffer layer, and each composite layer comprising an InGaN sublayer and a GaN sublayer that is grown on the InGaN sublayer; and successively growing an N-type GaN layer, an active layer and a P-type GaN layer on the buffer layer to form an epitaxial wafer, the active layer comprising alternately stacked InGaN quantum wells and GaN quantum barriers.

Abstract: A method for object detection includes: extracting a plurality of identification features from a plurality of reference images that are related to a target object; selecting a plurality of selected identification features respectively from the identification features so as to obtain a first feature dataset, and storing the first feature dataset, a quantity of selected identification features being smaller than a quantity of the identification features; in response to receipt of a to-be-detected image, performing a feature extraction operation on the to-be-detected image to obtain a second feature dataset; performing a similarity determination operation with respect to the to-be-detected image based on the first feature dataset and the second feature dataset, and calculating a quantity of instances of the target object in the to-be-detected image.

Abstract: A method for coating a curved substrate is disclosed, which includes: providing a coating device including: a chamber, a carrying platform, a sputtering mechanism, and a position-adjusting mechanism, wherein the carrying platform is disposed in the chamber and has a first surface, the sputtering mechanism is disposed in the chamber and is disposed corresponding to the carrying platform, and the position-adjusting mechanism is disposed in the chamber; providing a curved substrate, wherein the curved substrate is disposed on the first surface of the carrying platform and the curved substrate has a second surface; adjusting the sputtering mechanism to different positions by the position-adjusting mechanism; and sputtering a coating material to different parts of the second surface of the curved substrate by the sputtering mechanism at the different positions.

Abstract: Disclosed is a method for processing an irradiation forecast. The method includes: acquiring irradiation forecast data corresponding to a target time period; calling a stacked generalization model including a first-layer generalizer and a second-layer generalizer; determining, using the first-layer generalizer, intermediate forecast data based on the irradiation forecast data corresponding to the target time period; and determining, using the second-layer generalizer, an output forecast value corresponding to the target time period based on the intermediate forecast data. In a technical solution according to an embodiment of the present disclosure, a method for processing an irradiation forecast is achieved.

Abstract: A semiconductor packaging structure includes a first passivation layer, a capacitor structure, and a second passivation layer. The capacitor structure is disposed on the first passivation layer. The second passivation layer is disposed on the capacitor structure opposite to the first passivation layer. The second passivation layer has a compressive stress that is smaller than ?0.3 GPa.

Abstract: In a method of manufacturing a semiconductor device, an opening is formed in a first dielectric layer so that a part of a lower conductive layer is exposed at a bottom of the opening, one or more liner conductive layers are formed over the part of the lower conductive layer, an inner sidewall of the opening and an upper surface of the first dielectric layer, a main conductive layer is formed over the one or more liner conductive layers, a patterned conductive layer is formed by patterning the main conductive layer and the one or more liner conductive layers, and a cover conductive layer is formed over the patterned conductive layer. The main conductive layer which is patterned is wrapped around by the cover conductive layer and one of the one or more liner conductive layers.

Abstract: A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.

Abstract: Disclosed are a method for controlling an Internet of Things (IoT) device, and a terminal device. The method is applied to a terminal device and includes: acquiring parameter information of a triggered key of a mouse; determining a target device and target operation information acting on the target device based on the parameter information; and sending device information of the target device and the target operation information to a server.

Abstract: Methods for forming a back-end-of-line (BEOL) passive device structure are provided. A method according to the present disclosure includes depositing a first conductor layer over a substrate, patterning the first conductor layer to form a patterned first conductor layer, depositing a first insulation layer over the patterned first conductor layer, depositing a second conductor layer over the first insulation layer, patterning the second conductor layer to form a patterned second conductor layer, depositing a second insulation layer over the patterned second conductor layer, depositing a third conductor layer over the second insulation layer, and patterning the third conductor layer to form a patterned third conductor layer. The patterning of the first conductor layer includes removing a right-angle edge of the first conductor layer.

Abstract: The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.

Abstract: In a method of manufacturing a semiconductor device, an opening is formed in a first dielectric layer so that a part of a lower conductive layer is exposed at a bottom of the opening, one or more liner conductive layers are formed over the part of the lower conductive layer, an inner sidewall of the opening and an upper surface of the first dielectric layer, a main conductive layer is formed over the one or more liner conductive layers, a patterned conductive layer is formed by patterning the main conductive layer and the one or more liner conductive layers, and a cover conductive layer is formed over the patterned conductive layer. The main conductive layer which is patterned is wrapped around by the cover conductive layer and one of the one or more liner conductive layers.

Abstract: A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.

Abstract: The present invention pertains to: a p-boronophenylalanine derivative that comprises a polymer to which a group represented by formula (I) is linked directly or via a linker; a composition containing same; and a kit for producing said derivative and composition.

Abstract: The present disclosure relates to a method and apparatus for modeling a photovoltaic power curve, and a computer device and a storage medium thereof. The method includes: acquiring photovoltaic data at various time points within a specified time period; dividing the photovoltaic data at the various time points into at least two photovoltaic data packets; and establishing, according to the respective photovoltaic data of the at least two photovoltaic data packets, packet photovoltaic power curves respectively corresponding to the at least two photovoltaic data packets. By the method, the photovoltaic data is fitted in different time periods during the photovoltaic curve modeling process, thereby reducing the influence of the difference between photoelectric conversion efficiencies in different time periods on photovoltaic curve modeling, and improving the accuracy of photovoltaic curve modeling.