Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A blood pressure detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a gas-pressure-sensing element, a driving-chip element, an encapsulation layer and a valve layer. The substrate includes inlet apertures. The microelectromechanical element and the gas-pressure-sensing element are stacked and integrally formed on the substrate. The encapsulation layer is encapsulated and positioned on the substrate. A flowing-channel space is formed above the microelectromechanical element and the gas-pressure-sensing element. The encapsulation layer includes an outlet aperture in communication with an airbag. The driving-chip element controls the microelectromechanical element, the gas-pressure-sensing element and valve units to transport gas.

Abstract: Disclosed is a self-powered formaldehyde sensing device, comprising: a triboelectric material electrode layer including a first substrate and a first electrode layer formed on the first substrate; a triboelectric material dielectric layer including a second substrate, a second electrode layer formed on the second substrate, a dielectric reacting layer formed on the second electrode layer, and a reaction modification layer formed on the dielectric reacting layer to surface-modify the dielectric reacting layer, the reaction modification layer being a phosphomolybdic acid complex (cPMA) layer, the phosphomolybdic acid complex of the phosphomolybdic acid complex layer being obtained by dissolving 4,4?-bipyridine (BPY) in isopropanol (IPA) and then mixing with phosphomolybdic acid (PMA) solution; an elastic spacer; and an external circuit.

Abstract: A semiconductor package is provided. The semiconductor package includes a heat dissipation substrate including a first conductive through-via embedded therein; a sensor die disposed on the heat dissipation substrate; an insulating encapsulant laterally encapsulating the sensor die; a second conductive through-via penetrating through the insulating encapsulant; and a first redistribution structure and a second redistribution structure disposed on opposite sides of the heat dissipation substrate. The second conductive through-via is in contact with the first conductive through-via. The sensor die is located between the second redistribution structure and the heat dissipation substrate. The second redistribution structure has a window allowing a sensing region of the sensor die receiving light. The first redistribution structure is electrically connected to the sensor die through the first conductive through-via, the second conductive through-via and the second redistribution structure.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A method for operating a chemical deposition chamber is disclosed. First, a digital liquid flow controller is provided to guide a precursor fluid into a chemical deposition chamber. Then, a pre-cleaning step is performed in the chemical deposition chamber. Later, a pre-tuning step is performed on the digital liquid flow controller so that the precursor fluid can be substantially stably guided into the chemical deposition chamber. Afterwards, the chemical deposition chamber is used to carry out the chemical deposition.

Abstract: A pump ring. The pump ring is suitable for a reaction chamber and capable for extracting gas from the reaction chamber in a uniform gas flow rate. The pump ring comprises a ring body and a top ring part located on the ring body. The top ring part is apart from an inner wall of the reaction chamber with a fixed distance. Therefore, a gas-extraction path composed of the reaction chamber, the ring body and the top ring part is unobstructed. Hence, the turbulence flow of the extracted gas can be efficiently suppressed and the problems of the accumulation of the impurities and reaction chamber contamination can be solved.

Abstract: A method for operating a chemical deposition chamber is disclosed. First, a digital liquid flow controller is provided to guide a precursor fluid into a chemical deposition chamber. Then, a pre-cleaning step is performed in the chemical deposition chamber. Later, a pre-tuning step is performed on the digital liquid flow controller so that the precursor fluid can be substantially stably guided into the chemical deposition chamber. Afterwards, the chemical deposition chamber is used to carry out the chemical deposition.

Abstract: A throttle valve connects with a chamber for adjusting air pressure in the chamber. The throttle valve has a housing having a channel in it, a piston ring positioned at an end of the channel, a stopper positioned in the channel, and a driver for rotating the stopper. The piston ring has a plane surface contacting with the housing, a first cambered surface contacting with the housing and vertically connecting with the plane surface, and a second cambered surface connecting with the first cambered surface. The second cambered surface of the piston ring contacts with a third cambered surface of the stopper.

Abstract: A pump ring. The pump ring is suitable for a reaction chamber and capable for extracting gas from the reaction chamber in a uniform gas flow rate. The pump ring comprises a ring body and a top ring part located on the ring body. The top ring part is apart from an inner wall of the reaction chamber with a fixed distance. Therefore, a gas-extraction path composed of the reaction chamber, the ring body and the top ring part is unobstructed. Hence, the turbulence flow of the extracted gas can be efficiently suppressed and the problems of the accumulation of the impurities and reaction chamber contamination can be solved.

Abstract: A lift pin mechanism is applied to a process chamber for carrying a substrate and moving the substrate upward or downward. The mechanism includes a plurality of lift pins positioned in a plurality of through holes of a pedestal and a lift ring positioned below the lift pins. The lift pins are fixed on the lift ring perpendicularly and are smaller than the through holes so that the lift pins can move upward or downward in the through holes.

Abstract: A throttle valve connects with a chamber for adjusting air pressure in the chamber. The throttle valve has a housing having a channel in it, a piston ring positioned at an end of the channel, a stopper positioned in the channel, and a driver for rotating the stopper. The piston ring has a plane surface contacting with the housing, a first cambered surface contacting with the housing and vertically connecting with the plane surface, and a second cambered surface connecting with the first cambered surface. The second cambered surface of the piston ring contacts with a third cambered surface of the stopper.