Abstract: The present invention relates to the field of microelectronic technology. It discloses a mixed Schottky/P-N junction diode and a method of making the same. The mixed Schottky/P-N junction diode comprises a semiconductor substrate having a bulk region and a doped region, and a conductive layer on the semiconductor substrate. The doped region has opposite doping from that of the bulk region. A P-N junction is formed between the bulk region and the doped region, a Schottky junction is formed between the conductive layer and the semiconductor substrate, and an ohmic contact is formed between the conductive layer and the doped region. The mixed Schottky/P-N junction diode of the present invention has high operating current, fast switching speed, small leakage current, high breakdown voltage, ease of fabrication and other advantages.