Abstract: A propulsion control device of a 3D printing-based tunnel boring machine, includes two propulsion control modules, and each of which includes tunnel support assemblies, a propulsion control assembly and a barrel body, where a propulsion sliding sleeve is arranged on an outer surface, and several tunnel support assemblies are arranged on an outer side of each propulsion sliding sleeve. Support plates on the two propulsion control modules alternately rise to support a 3D printed tunnel pipe. In the propulsion control module with the support plates in a closed state, a propulsion hydraulic cylinder controls a propulsion hydraulic cylinder extending end to contract, so as to pull the propulsion sliding sleeve to a front section of the barrel body; and in the propulsion control module with the support plates in a support state, the barrel body continuously advances relative to the propulsion sliding sleeve.

Abstract: According to an example of the present disclosure a semiconductor laser diode includes a layer of graphene between an active laser region and a semiconductor substrate structure. The semiconductor laser diode may further include a first pair of electrodes to apply a potential difference across the active laser region and a second pair of electrodes to apply a potential difference across the layer of graphene.

Abstract: Examples herein relate to semiconductor devices having contacts that provide low contact resistance for both p-type and n-type materials. An example semiconductor device includes a semiconductor device layer having at least one of a p-type material or a n-type material. A contact is manufactured on the semiconductor device layer with a complementary metal-oxide-semiconductor process. The contact includes a first layer having palladium coupled with a surface of the semiconductor device layer, a conducting second layer coupled with the first layer, and a third layer having germanium coupled with the second conducting layer.

Abstract: According to an example of the present disclosure a semiconductor laser diode includes a layer of graphene between an active laser region and a semiconductor substrate structure. The semiconductor laser diode may further include a first pair of electrodes to apply a potential difference across the active laser region and a second pair of electrodes to apply a potential difference across the layer of graphene.

Abstract: A memory managing device and method and an electronic apparatus are provided. The memory managing device is applied to a memory having a plurality of storage regions capable of being separated physically, comprising: a storage detecting unit for detecting the current storage status of the memory; a block computing unit for computing the current active block in the memory; a discreteness deciding unit for deciding whether the discreteness of a segment in the memory is larger than a predetermined threshold; a segment arranging unit for arranging the segment when the discreteness is larger than the predetermined threshold to move the active block to a set of storage regions whose number of the storage regions is less than that before the movement; and a power consumption setting unit for setting the storage regions other than the set of the storage regions in the memory to a low power consumption status.