Abstract: Embodiments of the present disclosure relate to an electrostatic protection structure and an electrostatic protection circuit. The electrostatic protection structure includes: a SCR structure and a trigger structure; the SCR structure includes: a well region of a second conductivity type and a first well of a first conductivity type region, a first-doped region of the first conductivity type, and a first-doped region of the second conductivity type; the trigger structure includes: a first-doped region of the second conductivity type, a second well region of the first conductivity type, a second-doped region of two conductivity types, a third-doped region of the second conductivity type, a fourth-doped region of the second conductivity type, and a first gate electrode.

Abstract: A discharge unit is connected to a power pad, a ground pad, and an I/O pad, and can discharge an electrostatic charge when an electrostatic pulse appears on any of the power pad, the ground pad, and the I/O pad. The discharge unit includes a first discharge unit and a second discharge unit, the first discharge unit is connected to the second discharge unit, the power pad, and the I/O pad, and the second discharge unit is connected to the ground pad and the I/O pad. The first discharge unit and/or the second discharge unit can discharge electrostatic charges on different pads, respectively.

Abstract: An information processing method and apparatus, a terminal, and a storage medium. The information processing method comprises: determining first content in response to a first operation event of a first control in a first document (S11); and adding the first content to the first document on the basis of content information and type information of the first content (S12). The type information comprises first type information and/or second type information, the second type information having an association with the first type information. In the described method, first content can be added to a first document according to content information and type information of the first content, so as to distinguish different ways of adding the first content.

Abstract: A discharge unit is connected to a power pad, a ground pad, and an I/O pad, and can discharge an electrostatic charge when an electrostatic pulse appears on any of the power pad, the ground pad, and the I/O pad. The discharge unit includes a first discharge unit and a second discharge unit, the first discharge unit is connected to the second discharge unit, the power pad, and the I/O pad, and the second discharge unit is connected to the ground pad and the I/O pad. The first discharge unit and/or the second discharge unit can discharge electrostatic charges on different pads, respectively.

Abstract: The present disclosure provides a diode-triggered bidirectional silicon controlled rectifier and circuit. The silicon controlled rectifier includes: a P-type substrate; a first P well formed in the P-type substrate, a first P-type doped region and a first N-type doped region being formed in the first P well; a second P well formed in the P-type substrate, a third N-type doped region and a fourth P-type doped region being formed in the second P well; and an N well formed in the P-type substrate, a second P-type doped region, a second N-type doped region and a third P-type doped region being formed in the N well. The second N-type doped region is electrically connected with a positive electrode of a diode string, and the first P-type doped region and the fourth P-type doped region are electrically connected with a negative electrode of the diode string.