Abstract: A method of growing an AlGaN semiconductor material utilizes an excess of Ga above the stoichiometric amount typically used. The excess Ga results in the formation of band structure potential fluctuations that improve the efficiency of radiative recombination and increase light generation of optoelectronic devices, in particular ultraviolet light emitting diodes, made using the method. Several improvements in UV LED design and performance are also provided for use together with the excess Ga growth method. Devices made with the method can be used for water purification, surface sterilization, communications, and data storage and retrieval.

Abstract: Semiconductor structures involving multiple quantum wells provide increased efficiency of UV and visible light emitting diodes (LEDs) and other emitter devices, particularly at high driving current. LEDs made with the new designs have reduced efficiency droop under high current injection and increased overall external quantum efficiency. The active region of the devices includes separation layers configured between the well layers, the one or more separation regions being configured to have a first mode to act as one or more barrier regions separating a plurality of carriers in a quantum confined mode in each of the quantum wells being provided on each side of the one or more separation layers and a second mode to cause spreading of the plurality of carriers across each of the quantum wells to increase an overlap integral of all of the plurality of carriers. The devices and methods of the invention provide improved efficiency for solid state lighting, including high efficiency ultraviolet LEDs.

Abstract: A liquid treatment device includes a base with a power source, a UV-LED module for providing UV-B or UV-C light to liquid, an LED for providing visible light, and a processor for selectively powering the UV-LED module and the LED, and having a UV transmissive material above the UV-LED module for allowing the UV-B or UV-C band light from the UV-LED module to be transmitted from the base housing, and a liquid storage housing removably coupled to the base housing with a storage portion configured to hold liquid and having a bottom portion comprising a UV transmissive material for allowing the UV-B or UV-C band light from the UV-LED module to be transmitted into the liquid, and an output coupled for restricting outflow of the liquid from the storage portion.

Abstract: A method for a water bottle comprising, coupling a cap to bottle housing such that an interior of the water bottle and the cap form a water-tight region, receiving a button push on the cap, determining with a light sensor whether visible light is present in a vicinity of a UV LED light source disposed within the cap, in response to the push of the button, initiating providing with a UV LED light source UV light to the interior in response to the push of the button and in response to absence of the visible light within the vicinity of the UV LED light source, and inhibiting providing with the UV light to the interior after a period of time after the initiating providing UV light to the interior or in response to determining the visible light being present in the vicinity of the UV LED light source.

Abstract: A UVC disinfection system is described where incoming fluid, such as water, is directed onto a transparent window in a vertical disinfection chamber. The incoming water is directed downward by a channel at an acute angle (e.g., 10-20 degrees) with respect to a central axis of the disinfection chamber and impinges on the window at an angle almost perpendicular to the window surface. One or more UVC LEDs are optically coupled to the window. The water impinging on the window becomes agitated due to the severe redirection and interaction with water already in the chamber. This randomizes (mixes) the water in the area where there is the highest UVC power. The UVC LEDs direct light along the central axis of the cylindrical chamber for maximum exposure of the water to the UVC light. Disinfection efficiency is therefore increased.

Abstract: A method of growing an AlGaN semiconductor material utilizes an excess of Ga above the stoichiometric amount typically used. The excess Ga results in the formation of band structure potential fluctuations that improve the efficiency of radiative recombination and increase light generation of optoelectronic devices, in particular ultraviolet light emitting diodes, made using the method. Several improvements in UV LED design and performance are also provided for use together with the excess Ga growth method. Devices made with the method can be used for water purification, surface sterilization, communications, and data storage and retrieval.

Abstract: A method for a water bottle comprising, coupling a cap to bottle housing such that an interior of the water bottle and the cap form a water-tight region, receiving a button push on the cap, determining with a light sensor whether visible light is present in a vicinity of a UV LED light source disposed within the cap, in response to the push of the button, initiating providing with a UV LED light source UV light to the interior in response to the push of the button and in response to absence of the visible light within the vicinity of the UV LED light source, and inhibiting providing with the UV light to the interior after a period of time after the initiating providing UV light to the interior or in response to determining the visible light being present in the vicinity of the UV LED light source.

Abstract: A storage container includes an input portion for receiving and filtering a source liquid to form an output liquid, a storage portion for storing the filtered liquid, and a base portion disposed below the storage portion including a UV light source for providing transmitted UV light to the filtered liquid, a UV light detector disposed an optical path length away from the UV light source for detecting received UV light through the filtered liquid in response to the transmitted UV light, a processor for determining an absorption or a transmission percentage in response to the transmitted UV light and the received UV light, for determining a safe condition, in response to the absorption or the transmission percentage respectively not exceeding or exceeding predetermined criteria, and one or more indicators for indicating that the liquid is safe for consumption to a user, in response to the safe condition.

Abstract: A liquid treatment device includes a base with a power source, a UV-LED module for providing UV-B or UV-C light to liquid, an LED for providing visible light, and a processor for selectively powering the UV-LED module and the LED, and having a UV transmissive material above the UV-LED module for allowing the UV-B or UV-C band light from the UV-LED module to be transmitted from the base housing, and a liquid storage housing removably coupled to the base housing with a storage portion configured to hold liquid and having a bottom portion comprising a UV transmissive material for allowing the UV-B or UV-C band light from the UV-LED module to be transmitted into the liquid, and an output coupled for restricting outflow of the liquid from the storage portion.

Abstract: Semiconductor structures involving multiple quantum wells provide increased efficiency of UV and visible light emitting diodes (LEDs) and other emitter devices, particularly at high driving current. LEDs made with the new designs have reduced efficiency droop under high current injection and increased overall external quantum efficiency. The active region of the devices includes separation layers configured between the well layers, the one or more separation regions being configured to have a first mode to act as one or more barrier regions separating a plurality of carriers in a quantum confined mode in each of the quantum wells being provided on each side of the one or more separation layers and a second mode to cause spreading of the plurality of carriers across each of the quantum wells to increase an overlap integral of all of the plurality of carriers. The devices and methods of the invention provide improved efficiency for solid state lighting, including high efficiency ultraviolet LEDs.

Abstract: A treatment device includes a base having a battery, a UV-LED for providing UV-C light during a UV sterilization process, LEDs for providing visible light during the UV sterilization process, and a controller for initiating the UV sterilization process, a translucent ring on the base for receiving the visible light from the LEDs and outputting it to the user, a first coupling structure on the base, a UV transmissive material above the UV-LED module, and a water storage removably coupled to the base having a sidewall structure for confining water, a second coupling structure below the sidewall structure for coupling with the first coupling structure to thereby create a water-tight seal between the water storage and the base, and a translucent material disposed upon the top opening of the water storage for receiving the visible light from the LEDs and outputting it to the user.

Abstract: A liquid treatment device includes a base with a power source, a UV-LED module for providing UV-B or UV-C light to liquid, an LED for providing visible light, and a processor for selectively powering the UV-LED module and the LED, and having a UV transmissive material above the UV-LED module for allowing the UV-B or UV-C band light from the UV-LED module to be transmitted from the base housing, and a liquid storage housing removably coupled to the base housing with a storage portion configured to hold liquid and having a bottom portion comprising a UV transmissive material for allowing the UV-B or UV-C band light from the UV-LED module to be transmitted into the liquid, and an output coupled for restricting outflow of the liquid from the storage portion.

Abstract: A method of growing an AlGaN semiconductor material utilizes an excess of Ga above the stoichiometric amount typically used. The excess Ga results in the formation of band structure potential fluctuations that improve the efficiency of radiative recombination and increase light generation of optoelectronic devices, in particular ultraviolet light emitting diodes, made using the method. Several improvements in UV LED design and performance are also provided for use together with the excess Ga growth method. Devices made with the method can be used for water purification, surface sterilization, communications, and data storage and retrieval.

Abstract: Embodiments of the invention include a light emitting diode including a semiconductor structure including an active layer disposed between an n-type region and a p-type region. The active layer emits UV radiation. A first metal layer is in direct contact with the p-type region. A second metal layer is in direct contact with the n-type region. The first and second metal layers are both formed on a first side of the semiconductor structure. A transparent optic is optically coupled to a major surface of the light emitting diode.

Abstract: A method of fabricating an ultraviolet (UV) light emitting device includes receiving a UV transmissive substrate, forming a first UV transmissive layer comprising aluminum nitride upon the UV transmissive substrate using a first deposition technique at a temperature less than about 800 degrees Celsius or greater than about 1200 degrees Celsius, forming a second UV transmissive layer comprising aluminum nitride upon the first UV transmissive layer comprising aluminum nitride using a second deposition technique that is different from the first deposition technique, at a temperature within a range of about 800 degrees Celsius to about 1200 degrees Celsius, forming an n-type layer comprising aluminum gallium nitride layer upon the second UV transmissive layer, forming one or more quantum well structures comprising aluminum gallium nitride upon the n-type layer, and forming a p-type nitride layer upon the one or more quantum well structures.

Abstract: Embodiments of the invention include a vessel having an opening and a detachable cover for covering the opening. The cover includes a semiconductor device with an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The cover also includes a sensor for detecting whether the cover is covering the opening.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.

Abstract: Embodiments of the invention include an elongate chamber. A UV source includes a semiconductor device, the semiconductor device including an active layer disposed between an n-type region and a p-type region. The active layer emits radiation having a peak wavelength in a UV range. The semiconductor device is positioned on a wall of the elongate chamber. An inner surface of the elongate chamber is reflective.