Abstract: The disclosure discloses a method and system for constructing and analyzing a knowledge graph of a wireless communication network protocol, and a device and a medium. The method for constructing and analyzing the knowledge graph of the wireless communication network protocol includes: defining entities and a relation between the entities according to endogenous factors of a wireless communication network protocol, defining a triplet based on the defined entities and the defined relation between the entities, and constructing a knowledge graph of the endogenous factors of the wireless communication network protocol based on the defined triplet; and performing association analysis between any nodes in the knowledge graph to acquire an association relation hidden between the endogenous factors of the wireless communication network protocol.

Abstract: A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.

Abstract: A plenum, positioned beneath a first coil and above a window disposed on a top portion of a processing chamber, has side walls and a top surface covering an upper surface of the window and has a first air inlet positioned at a center portion to receive airflow from a first air amplifier. The first air inlet includes holes to distribute the air across the window within the side walls to reduce hotspots at a center portion of the window. The plenum includes a second air inlet at an edge portion of the top surface to receive the airflow from a second air amplifier to reduce hotspots at an edge portion of the window, and a third air inlet between the center and edge portions of the top surface to receive the airflow from a third air amplifier to reduce hotspots at a middle portion of the window.

Abstract: A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

Abstract: A substrate processing system for a substrate processing chamber includes a gas delivery system configured to direct process gases toward a substrate support in the substrate processing chamber and a controller. During processing of a substrate arranged on the substrate support the controller is configured to calculate, based on at least one of a position of an edge ring of the substrate support and characteristics of the process gases directed toward the substrate support, a distribution of etch by-product material redeposited onto the substrate during processing and, in response to the calculated distribution, generate control signals to cause an actuator to selectively adjust a position of the edge ring relative to the substrate and cause the gas delivery system to selectively adjust a flow of the process gases.

Abstract: A method for accelerating physical simulation models during microelectronic device fabrication may include, but is not limited to, running a physical simulation model at a first grid size having a first resolution, generating outputs at the first grid size having the first resolution from the physical simulation model, inputting the outputs at the first grid size having the first resolution from the physical simulation model into a resolution enhancement model (REM), and generating outputs at a second grid size having a second resolution via the REM to reduce at least one of a computational time cost or a computational resource cost of a controller running the physical simulation model. The physical simulation model may simulate an on-wafer performance of at least one microelectronics fabrication process. The second grid size may be smaller than the first grid size. The second resolution may be higher than the first resolution.

Abstract: A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.

Abstract: A pure bamboo fiber mattress and a manufacturing method thereof are disclosed. The manufacturing method includes the following steps: trimming and cleaning bamboo; sawing; splitting; slicing the bamboo strips; knitting; softening; directional fiber opening; dry cleaning, drying and removing dust; stacking; sewing and packing. The pure bamboo fiber mattress includes a surface layer, a transition layer, a core layer, another transition layer and another surface layer that are arranged in sequence from top to bottom. The surface layer includes 3-5 layers of first bamboo mesh fabric laid one on top of another. The transition layer includes 3-8 layers of second bamboo mesh fabric laid one on top of another. The core layer includes 3-8 layers of third bamboo mesh fabric laid one on top of another. The first bamboo mesh fabric, the second bamboo mesh fabric and the third bamboo mesh fabric are made of bamboo fibers.

Abstract: A pure bamboo fiber mattress and a manufacturing method thereof are disclosed. The manufacturing method includes the following steps: trimming and cleaning bamboo; sawing; splitting; slicing the bamboo strips; knitting; softening; directional fiber opening; dry cleaning, drying and removing dust; stacking; sewing and packing. The pure bamboo fiber mattress includes a surface layer, a transition layer, a core layer, another transition layer and another surface layer that are arranged in sequence from top to bottom. The surface layer includes 3-5 layers of first bamboo mesh fabric laid one on top of another. The transition layer includes 3-8 layers of second bamboo mesh fabric laid one on top of another. The core layer includes 3-8 layers of third bamboo mesh fabric laid one on top of another. The first bamboo mesh fabric, the second bamboo mesh fabric and the third bamboo mesh fabric are made of bamboo fibers.

Abstract: A substrate processing system for a substrate processing chamber includes a gas delivery system configured to direct process gases toward a substrate support in the substrate processing chamber and a controller. During processing of a substrate arranged on the substrate support the controller is configured to calculate, based on at least one of a position of an edge ring of the substrate support and characteristics of the process gases directed toward the substrate support, a distribution of etch by-product material redeposited onto the substrate during processing and, in response to the calculated distribution, generate control signals to cause an actuator to selectively adjust a position of the edge ring relative to the substrate and cause the gas delivery system to selectively adjust a flow of the process gases.

Abstract: Provided are a method, a device and a system for presenting information. The method includes: acquiring at least one preset information presentation time point in a video to be played and a pre-stored presentation information set associated with video content at the information presentation time point, where the presentation information set corresponds to the information presentation time point in a one-to-one manner; selecting to-be-presented information from the presentation information set corresponding to the information presentation time point based on historical browsing information, to obtain the to-be-presented information corresponding to the information presentation time point; and sending the to-be-presented information corresponding to the information presentation time point to a terminal.

Abstract: A substrate support in a substrate processing system includes an inner portion and an outer portion. The inner portion is positioned below a gas distribution device configured to direct first process gases toward the inner portion. The outer portion includes an edge ring positioned around an outer perimeter of the inner portion to at least partially surround the inner portion and a substrate arranged on the inner portion. The edge ring is configured to be raised and lowered relative to the inner portion, and to direct second process gases toward the inner portion. A controller determines distribution of material deposited on the substrate during processing and, based on the determined distribution, selectively adjusts a position of the edge ring and selectively adjusts flow of at least one of the first process gases and the second process gases.

Abstract: A substrate processing system includes a multi-zone cooling apparatus to provide cooling for all or substantially all of a window in a substrate processing chamber. In one aspect, the apparatus includes one or more plenums to cover all or substantially all of a window in a substrate processing chamber, including under an energy source for transformer coupled plasma in the substrate processing chamber. One or more air amplifiers and accompanying conduits provide air to the one or more plenums to provide air flow to the window. The conduits are connected to plenum inlets at various distances from the center, to direct airflow throughout the window and thus address center hot, middle hot, and edge hot conditions, depending on the processes being carried out in the chamber. In one aspect, the one or more plenums include a central air inlet, to direct air toward the center portion of the window, to address center hot conditions.

Abstract: A substrate is positioned on a substrate support structure within a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode within the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequency signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate.

Abstract: To reduce the time for testing an application, a software testing system can identify and select test scripts that are targeted toward program code in the application which has been modified since a previous test. The software testing system performs a training phase in which each test script in a set of scripts is performed. The system monitors an application during performance of each test script to identify which program code of the application is executed or invoked during testing. The system associates each test script with an indication of which program code the test script executed. During a subsequent test, the system determines program code of the application that was modified. The system identifies test scripts that were previously determined to execute program code corresponding to the modified program code. The system performs the identified test scripts to test the modified program code of the application.

Abstract: A substrate is positioned on a substrate support structure within a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode within the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequency signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate.

Abstract: Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic etching without alternating between chemistries used to etch material on a substrate. A well-controlled etch front allows a synergistic effect of reactive radicals and inert ions to perform the etching, such that material is etched when the substrate is modified by reactive radicals and removed by inert ions, but not etched when material is modified by reactive radicals but no inert ions are present, or when inert ions are present but material is not modified by reactive radicals.

Abstract: A substrate support in a substrate processing system includes an inner portion and an outer portion. The inner portion is positioned below a gas distribution device configured to direct first process gases toward the inner portion. The outer portion includes an edge ring positioned around an outer perimeter of the inner portion to at least partially surround the inner portion and a substrate arranged on the inner portion. The edge ring is configured to be raised and lowered relative to the inner portion, and to direct second process gases toward the inner portion. A controller determines distribution of material deposited on the substrate during processing and, based on the determined distribution, selectively adjusts a position of the edge ring and selectively adjusts flow of at least one of the first process gases and the second process gases.

Abstract: A method for reducing sidewall roughness in an etch layer below a first mask with sidewall roughness in a processing chamber is provided. Sidewalls of the first mask are smoothed, comprising, flowing a processing gas into the processing chamber and forming the processing gas into an in situ plasma in the processing chamber with sufficient energy to sputter and smooth sidewall roughness of the first patterned mask. The etch layer is etched through the first patterned mask.

Abstract: Provided are a method, a device and a system for presenting information. The method includes: acquiring at least one preset information presentation time point in a video to be played and a pre-stored presentation information set associated with video content at the information presentation time point, where the presentation information set corresponds to the information presentation time point in a one-to-one manner; selecting to-be-presented information from the presentation information set corresponding to the information presentation time point based on historical browsing information, to obtain the to-be-presented information corresponding to the information presentation time point; and sending the to-be-presented information corresponding to the information presentation time point to a terminal.