Patents by Inventor Yiu-Huen Wong
Yiu-Huen Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7631412Abstract: The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.Type: GrantFiled: October 10, 2007Date of Patent: December 15, 2009Assignee: Agere Systems Inc.Inventors: Bradley Paul Barber, Yiu-Huen Wong
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Patent number: 7328497Abstract: A method is provided for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.Type: GrantFiled: June 6, 2005Date of Patent: February 12, 2008Assignee: Agere Systems Inc.Inventors: Bradley Paul Barber, Yiu-Huen Wong
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Publication number: 20080028584Abstract: The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.Type: ApplicationFiled: October 10, 2007Publication date: February 7, 2008Applicant: AGERE SYSTEMS INC.Inventors: Bradley Barber, Yiu-Huen Wong
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Publication number: 20050224450Abstract: The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.Type: ApplicationFiled: June 6, 2005Publication date: October 13, 2005Inventors: Bradley Barber, Yiu-Huen Wong
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Patent number: 6927125Abstract: The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.Type: GrantFiled: February 11, 2004Date of Patent: August 9, 2005Assignee: Agere Systems Inc.Inventors: Christopher D. W. Jones, Donald W. Murphy, Yiu-Huen Wong
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Publication number: 20040159862Abstract: The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.Type: ApplicationFiled: February 11, 2004Publication date: August 19, 2004Applicant: Agere Systems Guardian Corp.Inventors: Christopher D.W. Jones, Donald W. Murphy, Yiu-Huen Wong
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Patent number: 6740922Abstract: The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.Type: GrantFiled: August 14, 2001Date of Patent: May 25, 2004Assignee: Agere Systems Inc.Inventors: Christopher D. W. Jones, Donald W. Murphy, Yiu-Huen Wong
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Patent number: 6675450Abstract: A method of producing and mounting electronic devices to negate the effects of parasitics on device performance. In one aspect, the substrate surface of the device is coated with a thin, etch-resistant film during fabrication that acts as a barrier to allow removal of substrate material beneath the film, creating a suspended structure upon which the remaining layers of circuitry rest. Alternatively the device is made with a film that is integral to the device, and that acts as the supporting membrane. To mount the device on a carrier or package, solder bumps are applied near the ends of the conductors of the device, and the die is then secured to a carrier or package, and positioned so that leads extending from the conductors mate up with bonding strips on the carrier or package. The solder bumps are then reflowed or melted to establish electrical connection between leads of the device and corresponding bonding strips of the carrier.Type: GrantFiled: October 30, 2000Date of Patent: January 13, 2004Assignee: Agere Systems Guardian Corp.Inventors: Linus Albert Fetter, Yiu-Huen Wong, Michael George Zierdt
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Patent number: 6674291Abstract: The effects of electromigration have been shown to lead to damage of metal electrodes of electronic devices such as thin film resonator (TFR) devices in only a few hours, for a test input power that is within the operational range of these devices. It has been determined that this failure is sensitive to the frequency of the input power. The present invention provides a method and apparatus for determining high power reliability in electronic devices, so as to enable an accurate determination of the failure time of the electronic device, and hence projected lifetime. This determination is independent from the frequency of an input power applied to the electronic device as part of the method for testing the device. Based on the above results, a TFR device has been developed, which includes a protective or electromigration-reducing layer such as titanium being deposited atop an electrode of the device.Type: GrantFiled: September 26, 2000Date of Patent: January 6, 2004Assignee: Agere Systems Guardian Corp.Inventors: Bradley Paul Barber, Peter Ledel Gammel, Juan A. Herbsommer, Hugo F. Safar, Yiu-Huen Wong
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Patent number: 6635519Abstract: In the thin film resonator, a piezoelectric membrane is disposed over a substrate. A first support structure defines a space over the substrate and supports the edges of the piezoelectric membrane such that the piezoelectric membrane is disposed over this space. A further support structure is disposed within the space to the piezoelectric membrane.Type: GrantFiled: January 10, 2002Date of Patent: October 21, 2003Assignee: Agere Systems, Inc.Inventors: Bradley Paul Barber, Peter Ledel Gammel, Yiu-Huen Wong
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Patent number: 6603241Abstract: A reflector stack or acoustic mirror arrangement for an acoustic device is described which may attain the highest possible impedance mismatch between alternating higher and lower impedance reflecting layers of the stack, so as to maximize bandwidth. The arrangement may also reduce manufacturing costs by requiring fewer layers for the device, as compared to conventional acoustic mirrors. The thinner reflecting stack is accordingly fabricated in reduced time to lower cost, by incorporating materials providing a larger acoustic impedance mismatch than those currently obtainable. The bandwidth of the resulting acoustic resonator device may be widened, particularly when a low density material such as aerogel, CVD SiO2 and/or sputter deposited SiO2 is applied as topmost layer in the reflector stack/acoustic mirror arrangement of the device.Type: GrantFiled: May 23, 2000Date of Patent: August 5, 2003Assignee: Agere Systems, Inc.Inventors: Bradley Paul Barber, Harold Alexis Huggins, Ronald Eugene Miller, Donald Winslow Murphy, Yiu-Huen Wong
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Publication number: 20030129785Abstract: In the thin film resonator, a piezoelectric membrane is disposed over a substrate. A first support structure defines a space over the substrate and supports the edges of the piezoelectric membrane such that the piezoelectric membrane is disposed over this space. A further support structure is disposed within the space to the piezoelectric membrane.Type: ApplicationFiled: January 10, 2002Publication date: July 10, 2003Inventors: Bradley Paul Barber, Peter Ledel Gammel, Yiu-Huen Wong
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Publication number: 20030036244Abstract: The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.Type: ApplicationFiled: August 14, 2001Publication date: February 20, 2003Inventors: Christopher D.W. Jones, Donald W. Murphy, Yiu-Huen Wong
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Publication number: 20030030078Abstract: An MOS transistor comprising a substrate, a source, a drain, and a gate, wherein the gate comprises aluminum nitride. Aluminum nitride is epitaxially grown on the silicon substrate at a substrate temperature of about 600° C. and subsequently annealed at a substrate temperature of about 950° C.Type: ApplicationFiled: October 7, 2002Publication date: February 13, 2003Inventors: Michael J. Manfra, Loren N. Pfeiffer, Kenneth W. West, Yiu-Huen Wong
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Patent number: 6495409Abstract: An MOS transistor comprising a substrate, a source, a drain, and a gate, wherein the gate comprises aluminum nitride. Aluminum nitride is epitaxially grown on the silicon substrate at a substrate temperature of about 600° C. and subsequently annealed at a substrate temperature of about 950° C.Type: GrantFiled: December 23, 1999Date of Patent: December 17, 2002Assignee: Agere Systems Inc.Inventors: Michael J. Manfra, Loren N. Pfeiffer, Kenneth W. West, Yiu-Huen Wong
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Publication number: 20020185936Abstract: The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.Type: ApplicationFiled: July 10, 2002Publication date: December 12, 2002Inventors: Bradley Paul Barber, Yiu-Huen Wong
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Publication number: 20020119622Abstract: The present invention provides a method of manufacturing a capacitor on a semiconductor wafer. The method comprises placing a metal nitride film, such as a tantalum nitride film, on a substrate of a semiconductor wafer. A first electrode and a dielectric layer are created from the metal nitride film by subjecting the metal nitride film to a plasma oxidation process, which forms a blended interface between the first electrode and the dielectric layer. To complete the capacitor, a second electrode is formed over the dielectric. Interconnections with other semiconductor devices may also be formed on the wafer to create an operative integrated circuit.Type: ApplicationFiled: February 27, 2001Publication date: August 29, 2002Inventors: Michael L. Steigerwald, Yiu-Huen Wong, Susan M. Zahurak
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Patent number: 6440852Abstract: An integrated circuit includes a substrate, and at least one copper interconnection layer adjacent the substrate. The interconnection layer further comprises copper lines, each comprising at least an upper surface portion including at least one copper fluoride compound. The copper fluoride compound preferably comprises at least one of cuprous fluoride and cupric fluoride. The compounds of copper and fluoride are relatively stable and provide a reliable and long term passivation for the underlying copper. In accordance with one particularly advantageous embodiment of the invention, the dielectric layer may comprise a fluorosilicate glass (FSG) layer. Accordingly, during formation of the FSG layer, the upper surface of the copper reacts with the fluorine to form the copper fluoride compound which then acts as the passivation layer for the underlying copper. In other embodiments, the dielectric layer may comprise an oxide or air, for example.Type: GrantFiled: July 30, 1999Date of Patent: August 27, 2002Assignee: Agere Systems Guardian Corp.Inventors: Martin G. Meder, Sailesh Mansinh Merchant, Michael Louis Steigerwald, Yiu-Huen Wong
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Patent number: 6420202Abstract: A process for configuring a thin film resonator to advantageously shape a desired acoustic mode of the resonator such that the electrical and acoustic performance of the resonator is enhanced. As a result of the contouring or shaping, a minimum amount of acoustic energy occurs near the edge of the resonator, from which energy may leak or at which undesired waves may be created by a desired mode. The process is used during batch-fabrication of thin-film resonators which are used in high frequency RF filtering or frequency control applications. Utilizing photolithography, the shaping can be achieved in a manner derived from the known methods used to manufacture lens arrays. Using the process, the lateral motion of acoustic waves within the resonator may be controlled and the acoustic energy of the sound wave positioned at a desired location within the resonator.Type: GrantFiled: May 16, 2000Date of Patent: July 16, 2002Assignee: Agere Systems Guardian Corp.Inventors: Bradley Paul Barber, Peter Ledel Gammel, Harold A. Huggins, Yiu-Huen Wong
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Patent number: 6349454Abstract: A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation take from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. Also provided is a method of making a TFR in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.Type: GrantFiled: July 29, 1999Date of Patent: February 26, 2002Assignee: Agere Systems Guardian Corp.Inventors: Michael James Manfra, Loren Neil Pfeiffer, Kenneth William West, Yiu-Huen Wong