Abstract: A power apparatus includes: an input shaft; an output shaft; a connecting mechanism; a first driving mechanism; a second driving mechanism of which an output end is fixedly connected with the input shaft; a first transmission component sleeved on the input shaft; a second transmission component sleeved on the output shaft; a third transmission component sleeved on the input shaft; a fourth transmission component sleeved on the output shaft; a changeover mechanism causing the first transmission component to rotate with rotation of the input shaft, the first transmission component rotating to drive the second transmission component to rotate, the output shaft rotating with the rotation of the second transmission component; or causing the third transmission component to rotate with rotation of the input shaft, the third transmission component rotating to drive the fourth transmission component to rotate, the output shaft rotating with the rotation of the fourth transmission component.

Abstract: A storage unit of a computer includes: a product configuration information holding unit; a component-vulnerability correspondence holding unit indicating security holes; an asset information holding unit that stores asset values of the respective component of the product; a security countermeasure classification holding unit that stores defense target components for the respective security countermeasures and coefficients of countermeasure effects; and an attack map holding unit that stores attack maps indicating attack paths. A processing unit executes a program, to form: an information collection processing unit; an attack map creation processing unit that creates an attack map for each product; and a vulnerability evaluation processing unit that calculates priority order among countermeasures from threat levels of security holes of the respective components on the basis of the asset values.

Abstract: A golf club has a head including a base layer and a compounded transfer layer. The base layer has a coupling face. The compounded transfer layer is formed on the coupling face of the base layer. The compounded transfer layer has a dye layer and a protection layer. The dye layer is sandwiched between the base layer and the protection layer.

Abstract: A golf club having a head is disclosed. The head comprises a base layer and a compounded transfer layer. The base layer has a coupling face. The compounded transfer layer is formed on the coupling face of the base layer. The compounded transfer layer has a dye layer and a protection layer. The dye layer is sandwiched between the base layer and the protection layer.

Abstract: A method and system for connection routing based on link utilization. A link utilization limit is accessed at a node of a network. The link utilization limit is compared to a utilization of a link coupled to the node. If the utilization of the link is greater than the link utilization limit, then the link is excluded from a virtual circuit.

Abstract: An illumination device and a manufacture method thereof are provided. The illumination device includes a base, an illumination chip, and a sealant. The base has a surrounding side wall which encloses a containing space. The illumination chip is disposed within the containing space while the sealant fills the containing space and covers the illumination chip. The sealant has an outer surface which includes a center concave and a circular convex surrounding the center concave. The center concave is formed as a part of a spherical surface with no singular point. The connection between the center concave and the circular convex forms a circular ridge.

Abstract: A method and system for connection routing based on link utilization. A link utilization limit is accessed at a node of a network. The link utilization limit is compared to a utilization of a link coupled to the node. If the utilization of the link is greater than the link utilization limit, then the link is excluded from a virtual circuit.

Abstract: A method and system for connection routing based on link utilization. A link utilization limit is accessed at a node of a network. The link utilization limit is compared to a utilization of a link coupled to the node. If the utilization of the link is greater than the link utilization limit, then the link is excluded from a virtual circuit.

Abstract: A deposition method for filling recesses in a substrate is described. In the method, the substrate is exposed to an energized deposition gas comprising first and second components, to deposit a first layer of a material in the recess, and thereafter, the ratio of the first component to the second component is reduced, to deposit a second layer of the material over the first layer in the recess. The deposition method may be used to fill recesses in a substrate and smoothen out reentrant cavities in a silicon nitride liner, in the fabrication of polysilicon gates in a substrate.

Abstract: In a method of filling a trench in a substrate, a substrate is placed in a process zone, the substrate comprising a trench. A first deposition process is performed by providing a first gas into the process zone, maintaining first process conditions to deposit a first silicon oxide material in the trench in the substrate, and exhausting the first gas. Thereafter, a second deposition process is performed by providing a second gas into the process zone, maintaining second process conditions to deposit a second silicon oxide material to fill the trench and optionally overfill the trench, and exhausting the second gas. The multiple process deposition process allows the trench to be filled and overfilled with different types of silicon oxide materials to render the trench filling process more economical.

Abstract: In a method of filling a trench in a substrate, a substrate is placed in a process zone, the substrate comprising a trench. A first deposition process is performed by providing a first gas into the process zone, maintaining first process conditions to deposit a first silicon oxide material in the trench in the substrate, and exhausting the first gas. Thereafter, a second deposition process is performed by providing a second gas into the process zone, maintaining second process conditions to deposit a second silicon oxide material to fill the trench and optionally overfill the trench, and exhausting the second gas. The multiple process deposition process allows the trench to be filled and overfilled with different types of silicon oxide materials to render the trench filling process more economical.

Abstract: A deposition method for filling recesses in a substrate is described. In the method, the substrate is exposed to an energized deposition gas comprising first and second components, to deposit a first layer of a material in the recess, and thereafter, the ratio of the first component to the second component is reduced, to deposit a second layer of the material over the first layer in the recess. The deposition method may be used to fill recesses in a substrate and smoothen out reentrant cavities in a silicon nitride liner, in the fabrication of polysilicon gates in a substrate.