Abstract: A method for fabricating an array substrate, the array substrate, a display panel, and a thin film transistor are provided. The thin film transistor includes a gate electrode, an active layer, a source electrode, a drain electrode, and an interlayer insulating layer. The active layer is disposed corresponding to the gate electrode. The source electrode and the drain electrode are disposed at both sides of the active layer and electrically connected to the active layer. The interlayer insulating layer is disposed between the active layer and the source electrode, and between the active layer and the drain electrode. The interlayer insulating layer is provided with step-shaped contact holes. The source electrode and the drain electrode are filled in the contact holes and electrically connected to the active layer.

Abstract: The present disclosure discloses a pixel circuit and a display panel. The pixel circuit comprises a second wire, a first light-emitting control unit, a driving unit, and a compensation unit. A control terminal of the first light-emitting control unit and a control terminal of the compensation unit share the second wire, which can save a wire quantity of the pixel circuit, thereby improving display resolution; at the same time, a control terminal of the driving unit is only equipped with the compensation unit, which reduces a leakage path of the control terminal of the driving unit.

Abstract: A method for fabricating an array substrate, the array substrate, and a thin film transistor are provided. The thin film transistor includes a gate electrode, an active layer, a source electrode, a drain electrode, and an interlayer insulating layer. The active layer is disposed corresponding to the gate electrode. The source electrode and the drain electrode are disposed at both sides of the active layer and electrically connected to the active layer. The interlayer insulating layer is disposed between the active layer and the source electrode, and between the active layer and the drain electrode. The interlayer insulating layer is provided with step-shaped contact holes. The source electrode and the drain electrode are filled in the contact holes and electrically connected to the active layer.

Abstract: The present application provides a display panel and a fabrication method thereof. In the display panel, a bonding module covers a display area and an extension area, and a bonding conductive layer of the bonding module is electrically connected to an external driving chip. A display module covers the display area and the extension area, the display module comprises a thin film transistor array structure, and the thin film transistor array structure comprises a source-drain conductive layer. A portion of the source-drain conductive layer in the extension area is electrically connected to the bonding conductive layer by a through hole.

Abstract: A method for fabricating an array substrate, the array substrate, and a thin film transistor are provided. The thin film transistor includes a gate electrode, an active layer, a source electrode, a drain electrode, and an interlayer insulating layer. The active layer is disposed corresponding to the gate electrode. The source electrode and the drain electrode are disposed at both sides of the active layer and electrically connected to the active layer. The interlayer insulating layer is disposed between the active layer and the source electrode, and between the active layer and the drain electrode. The interlayer insulating layer is provided with step-shaped contact holes. The source electrode and the drain electrode are filled in the contact holes and electrically connected to the active layer.

Abstract: The present application provides a display panel and a fabrication method thereof. In the display panel, a bonding module covers a display area and an extension area, and a bonding conductive layer of the bonding module is electrically connected to an external driving chip. A display module covers the display area and the extension area, the display module comprises a thin film transistor array structure, and the thin film transistor array structure comprises a source-drain conductive layer. A portion of the source-drain conductive layer in the extension area is electrically connected to the bonding conductive layer by a through hole.

Abstract: Disclosed in the present invention are a method for manufacturing a thin-film transistor, an array substrate, and a display device. The method includes: forming a buffer layer on a substrate; forming a polysilicon layer on the buffer layer; performing a patterning process on the polysilicon layer, to form an active layer; depositing a gate insulating layer on the active layer; depositing a gate metal layer on the gate insulating layer, and performing dry etching on the gate metal layer by using the patterning process and by using a gas containing CO as an etching gas, to form a gate; performing ion implantation on the active layer by using the gate as a mask, to form a source region and a drain region; and depositing a passivation layer on the gate, forming through holes in the gate insulating layer and the passivation layer, and manufacturing a source and a drain.

Abstract: The present invention provides an array substrate and a manufacturing method thereof. The array substrate includes a base, a first thin film transistor (TFT), and a second TFT. The first TFT includes a first active layer, a gate insulating layer disposed on the active layer, and a first gate disposed on the first gate insulating layer. The second TFT includes a second active layer disposed on the first gate insulating layer. The first gate and the second active layer are made of a same material, and are integrally formed.

Abstract: A display panel, a manufacturing method thereof, and a display device are provided. In the display panel, a conversion terminal layer is formed on a first substrate to form a conversion terminal, a first opening is formed at a position on the first substrate corresponding to the conversion terminal, and a data line formed from a source/drain layer is connected to the conversion terminal by a first through-hole. Therefore, when a driver chip is connected to the display panel, the driver chip can be connected to the data line of the source/drain layer by the conversion terminal layer.

Abstract: Disclosed in the present invention are a method for manufacturing a thin-film transistor, an array substrate, and a display device. The method includes: forming a buffer layer on a substrate; forming a polysilicon layer on the buffer layer; performing a patterning process on the polysilicon layer, to form an active layer; depositing a gate insulating layer on the active layer; depositing a gate metal layer on the gate insulating layer, and performing dry etching on the gate metal layer by using the patterning process and by using a gas containing CO as an etching gas, to form a gate; performing ion implantation on the active layer by using the gate as a mask, to form a source region and a drain region; and depositing a passivation layer on the gate, forming through holes in the gate insulating layer and the passivation layer, and manufacturing a source and a drain.

Abstract: The disclosure relates to oligonucleotide compounds (oligomers) that target Myc mRNA in a cell, leading to reduced expression of Myc. Reduction of Myc expression is beneficial for the treatment of certain disorders, such as hyperproliferative disorders (e.g., cancer). The disclosure provides therapeutic compositions comprising oligomers and methods for modulating the expression of Myc using said oligomers, including methods of treatment.

Abstract: The disclosure relates to oligonucleotide compounds (oligomers) that target Myc mRNA in a cell, leading to reduced expression of Myc. Reduction of Myc expression is beneficial for the treatment of certain disorders, such as hyperproliferative disorders (e.g., cancer). The disclosure provides therapeutic compositions comprising oligomers and methods for modulating the expression of Myc using said oligomers, including methods of treatment.

Abstract: The present invention relates to oligomer compounds (oligomers) for the treatment and prevention of acute myeloid leukemia, which target GLI2 mRNA in a cell, leading to reduced expression of GLI2.

Abstract: The invention relates to oligomer compounds (oligomers), which target beta-catenin mRNA in a cell, leading to reduced expression of beta-catenin. Reduction of beta-catenin expression is beneficial for a range of medical disorders, such as hyperproliferative disorders, such as cancers. The invention provides therapeutic compositions comprising oligomers and methods for modulating the expression of beta-catenin using said oligomers, including methods of treatment for hyperproliferative disorders including cancers such as multiple myeloma.

Abstract: The invention provides the combination use of antisense oligomers targeting androgen receptor mRNA and androgen receptor binding inhibitors that reduce androgen receptor activity for the treatment of androgen receptor related medical disorders, such as cancers, particularly prostate cancers and breast cancers.

Abstract: The invention provides the combination use of antisense oligomers targeting androgen receptor mRNA and androgen receptor binding inhibitors that reduce androgen receptor activity for the treatment of androgen receptor related medical disorders, such as cancers, particularly prostate cancers and breast cancers.

Abstract: The present invention relates to oligomer compounds (oligomers) for the treatment and prevention of acute myeloid leukemia, which target GLI2 mRNA in a cell, leading to reduced expression of GLI2.

Abstract: One aspect of the invention provides methods for treating cancers which are resistant to treatment with a protein tyrosine kinase inhibitor by co-treatment with the protein tyrosine kinase inhibitor and one or more antisense oligomers that reduce the expression of HER3 and/or HER2 and/or EGFR. Another aspect of the invention provides methods for treating cancers by co-treatment with an inhibitor of HER2 and one or more antisense oligomers that reduce the expression of HER3.

Abstract: The invention relates to pharmaceutical compositions for and methods of treatment with HER3-targeted combination therapy. The invention relates to pharmaceutical compositions comprising an oligomer which targets HER3 (and optionally one or more of HER2 and EGFR) mRNA in a cell, leading to reduced expression of HER3 and optionally HER2 and/or EGFR, and a small molecule protein tyrosine kinase inhibitor of one or more receptor tyrosine kinases, leading to inhibition of signaling and/or internalization of receptor dimers into the cell. The combination therapy is beneficial for a range of medical disorders, such hyperproliferative disorders (e.g., cancer). The invention provides methods of treating hyperproliferative disorders with a combination of an oligomer and a protein tyrosine kinase inhibitor.

Abstract: The invention provides the combination use of antisense oligomers targeting androgen receptor mRNA and androgen receptor binding inhibitors that reduce androgen receptor activity for the treatment of androgen receptor related medical disorders, such as cancers, particularly prostate cancers and breast cancers.