Abstract: The present disclosure discloses a quantum dot and a preparation method thereof, the method comprises a plurality of following steps: preparing a quantum dot solution; preparing an ion-containing organic ligand precursor; adding the ion-containing organic ligand precursor into the quantum dot solution, and making a surface-modification to the quantum dots, before obtaining the quantum dots having the surfaces modified; or providing a quantum dot solution; providing an ion-containing organic ligand precursor; mixing the ion-containing organic ligand precursor and the quantum dot solution, to make a ligand exchanging, before centrifuging and obtaining the quantum dots having the ligand exchanged.

Abstract: Disclosed are a crosslinked nanoparticle film and a preparation method therefor, and a thin film optoelectronic device. The preparation method comprises: dispersing nanoparticles in a solvent and uniformly mixing same, so as to obtain a nanoparticle solution; and using the nanoparticle solution to prepare a nanoparticle thin film by means of a solution method, and introducing a gas combination to promote a crosslinking reaction, so as to obtain a crosslinked nanoparticle thin film. By introducing a gas combination during film formation of nanoparticles, the present disclosure promotes the crosslinking among particles, and thus increases the electrical coupling among particles, lowers the potential barrier of carrier transmission, and increases the carrier mobility, thereby greatly improving the electrical properties of the thin film.

Abstract: Disclosed in the present disclosure is a preconfigured reverse drive method applied in a video displaying process. The method comprises the steps of: pre-obtaining display content of several frames behind lit pixels in a video by means of content loading; and adding a reverse drive signal before each forward drive signal used for driving the display content of the several frames, to suppress electric charge concentration on pixel in a video display panel in advance. The reverse drive signal changes the potential barrier of the detect potential well, removes electric charges confined and concentrated in the potential well, and reduces the density of confined electric charges. Thus, the video display brightness is improved, and the service life of the video display panel is prolonged.

Abstract: An alloy nanomaterial, a preparation method therefor, and a semiconductor device. The alloy nanomaterial comprises N alloy nanostructured units arranged in sequence in a radial direction, wherein N is larger than or equal to 2. The alloy nanostructured units comprise type A1 and type A2. Type A1 or type A2 is a gradient alloy component structure in which energy level width increases or decreases from inside out in the radial direction, respectively. In alloy nanomaterial, distribution of alloy nanostructured units is: alloy nanostructured units of type A1 and type A2 are alternately distributed, and the energy levels of adjacent alloy nanostructured units are continuous. The alloy nanomaterial not only achieves higher luminous efficiency, but satisfies comprehensive performance requirements of a QLED device and a corresponding display technology for alloy nanomaterial, and is an ideal material applicable to QLED and display technology.

Abstract: Provided is a quantum dot surface ligand exchange method. The method comprises the steps: pre-treating proton-containing ligands using a deprotonating agent to obtain deprotonated ligands; mixing a pre-prepared quantum dot solution having original ligands with the deprotonated ligands, after stirring for a predetermined amount of time at room temperature, a ligand exchange reaction occurring, and after washing, obtaining a quantum dot having the deprotonated ligands on the surface. The quantum dot ligand exchange method has a high reaction rate and is easy to operate; after the ligand exchange, the deprotonated ligands firmly bind to cations on the surface of the quantum dot, and after the ligand exchange, the quantum dot provides a stable colloidal solution, and has good solubility and high luminous efficiency.

Abstract: Disclosed are quantum dot solid-state film, method for preparing same, and quantum dot light-emitting diode. Method comprises: providing quantum dot solution, preparing quantum dot material solid-state film on substrate; before being immersed in surface modifier solution to obtain quantum dot material solid-state film modified by a surface modifier; providing a metal nanoparticle seed solution, using solution method to deposit nanoparticle on quantum dot material solid-state film modified by surface modifier to obtain a quantum dot material solid-state film with the surface having adsorbed a layer of metal nanoparticle seed; before being immersed in a metal nano wire precursor solution, nanoparticle to perform a metal nano wire growth, finally obtaining a quantum dot solid-state film. The quantum dot solid-state film obtained using method of invention can effectively and rapidly transmit electrical charges, improving overall performance of device.

Abstract: The present invention provides a quantum dot (QD) composite material, a preparation method, and a semiconductor device. The method includes synthesizing a first compound at a predetermined position, synthesizing a second compound on the surface of the first compound, the second compound and the first compound having a same alloy composition or having different alloy compositions, and forming the QD composite material through a cation exchange reaction between the first compound and the second compound. The light-emission peak wavelength of the QD composite material experiences one or more of a blue-shift, a red-shift, and no-shift. The method uses the QD successive ionic layer adsorption and reaction (SILAR) synthesis method to precisely control layer-by-layer QD growth and the QD one-step synthesis method to form a composition-gradient transition shell.

Abstract: The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes a number of N QD structural units arranged sequentially along a radial direction of the QD material, where N?1. Each QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface of the QD material. Moreover, the energy level widths of adjacent QD structural units are continuous. The present invention provides a QD material having a gradient alloy composition along the radial direction from the center to the surface. The disclosed QD material not only achieves higher QD light-emitting efficiency, but also meets the comprehensive requirements of semiconductor devices and corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

Abstract: The present invention provides a QD material, a preparation method, and a semiconductor device. The QD material includes at least one QD structural unit arranged sequentially along a radial direction of the QD material. Each QD structural unit has a gradient alloy composition structure with a changing energy level width along the radial direction or a homogeneous alloy composition structure with a constant energy level width along the radial direction. The disclosed QD material not only achieves higher light-emission efficiency of QD material, but also meets the comprehensive requirements of semiconductor devices and the corresponding display technologies on QD materials. Therefore, the disclosed QD material is a desired QD light-emitting material suitable for semiconductor devices and display technologies.

Abstract: A quantum dot for emitting light under electrical stimulation has a center of a first composition and a surface of a second composition. The second composition is different than the first composition. An intermediate region extends between the center and surface and has a continuous composition gradient between the center and the surface. The quantum dot is synthesized in one pot method by controlling the rate and extent of a reaction by controlling the following parameters: (i) type and quantity of reactant, (ii) reaction time, and (iii) reaction temperature.

Abstract: A quantum dot for emitting light under electrical stimulation has a center of a first composition and a surface of a second composition. The second composition is different than the first composition. An intermediate region extends between the center and surface and has a continuous composition gradient between the center and the surface. The quantum dot is synthesized in a one pot method by controlling the rate and extent of a reaction by controlling the following parameters: (i) type and quantity of reactant, (ii) reaction time, and (iii) reaction temperature.

Abstract: A method for synthesizing a quantum dot light emitting diode by providing a glass substrate. A QD-LED stack is formed upon the glass substrate. This QD-LED stack is diffused with an active reagent. The QD-LED stack is encapsulated with a curable resin. The curable resin is cured with UV light.

Abstract: A method for synthesizing a quantum dot light emitting diode by providing a glass substrate. A QD-LED stack is formed upon the glass substrate. This QD-LED stack is diffused with an active reagent. The QD-LED stack is encapsulated with a curable resin. The curable resin is cured with UV light.

Abstract: A quantum dot for emitting light under electrical stimulation has a center of a first composition and a surface of a second composition. The second composition is different than the first composition. An intermediate region extends between the center and surface and has a continuous composition gradient between the center and the surface. The quantum dot is synthesized in a one pot method by controlling the rate and extent of a reaction by controlling the following parameters: (i) type and quantity of reactant, (ii) reaction time, and (iii) reaction temperature.