Abstract: An anechoic chamber and a construction method thereof are provided, the anechoic chamber includes a top surface, being a polygon; trapezoid surfaces, corresponding to edges of top surface, upper edge lengths of trapezoid surface being equal to edge lengths of top surface, trapezoid surfaces being connected to edges of top surface through the upper edges, the trapezoid surfaces being sequentially connected along a circumferential direction of top surface, and being at angle to the top surface; rectangular surfaces, corresponding to the trapezoid surfaces, upper edge lengths of rectangular surface being equal to lower edge lengths of trapezoid surface, rectangular surfaces being connected to the trapezoid surfaces through the upper edges, the rectangular surfaces being sequentially connected along a circumferential direction of the lower edges of trapezoid surfaces, and being perpendicular to the top surface; and an absorbing material, disposed on the top surface, the trapezoid surfaces and the rectangular surf

Abstract: An anechoic chamber and a construction method thereof are provided, the anechoic chamber includes a top surface, being a polygon; trapezoid surfaces, corresponding to edges of top surface, upper edge lengths of trapezoid surface being equal to edge lengths of top surface, trapezoid surfaces being connected to edges of top surface through the upper edges, the trapezoid surfaces being sequentially connected along a circumferential direction of top surface, and being at angle to the top surface; rectangular surfaces, corresponding to the trapezoid surfaces, upper edge lengths of rectangular surface being equal to lower edge lengths of trapezoid surface, rectangular surfaces being connected to the trapezoid surfaces through the upper edges, the rectangular surfaces being sequentially connected along a circumferential direction of the lower edges of trapezoid surfaces, and being perpendicular to the top surface; and an absorbing material, disposed on the top surface, the trapezoid surfaces and the rectangular surf

Abstract: Invalid data is prevented from being input to a machine-learned information processing device from outside. An information processing device functioning as a firewall for a machine learning server is provided. The information processing device includes an input data check unit and an output data check unit. The input data check unit includes an input data analysis unit and an input data filtering unit. The output data check unit includes an output data analysis unit and an output data filtering unit. The input data analysis unit is configured to analyze input data to be input to the machine learning server. The input data filtering unit is configured to filter out less valid data from the input data. The output data analysis unit is configured to analyze output data outputted from the machine learning server. The output data filtering unit is configured to filter out less valid data from the output data.

Abstract: A thin-film forming apparatus is provided capable of forming a thin-film by bringing ions of some degree in plasma into contact with the thin-film. This thin-film forming apparatus comprises a plasma generator disposed at a position corresponding to an opening of a vacuum chamber for producing plasma in the vacuum chamber, a base plate holder for holding a substrate in the vacuum chamber, and an ion quencher disposed between the plasma generator and the base plate holder. When the plasma generator is projected directly onto the base plate holder, the projection image of plasma generator shielded by the ion quencher has an area smaller than the residual image of plasma generator projected onto the base plate holder.

Abstract: A thin film deposition apparatus comprising gas introducer for introducing a reactive gas into the vacuum container, and plasma generator for generating a plasma of the reactive gas within the vacuum container. An insulator is deposited on the inner wall surface of the vacuum container. The gas introducer introduces a reactive gas and an inert gas into a region where a plasma is generated by the plasma generator.

Abstract: A method of forming a thin film of the present invention comprises: an optical characteristic adjusting step of repeatedly conveying a substrate holder between a zone to perform an intermediate thin film forming step and a zone to perform a film composition converting step while controlling a conveying speed of the substrate holder for holding a substrate, and adjusting a film composition of a finally formed thin film to form the thin film having an optical characteristic value of a region where a hysteresis phenomenon occurs.

Abstract: A thin film deposition apparatus of the present invention includes a vacuum container for maintaining a vacuum therein, gas introducer for introducing a reactive gas into the vacuum container, and plasma generator for generating a plasma of the reactive gas within the vacuum container. A wall surface within the vacuum container is coated with pyrolytic boron nitride. The plasma generator comprises a dielectric wall provided on an outer wall of the vacuum container, the first antenna having a spiral shape, the second antenna having a spiral shape, and the conductor wire for connecting the first and second antennas to an RF power supply, antenna fixing mechanism and position adjustor for antennas.

Abstract: The present invention is drawn to an apparatus for forming a thin film. The apparatus includes a vacuum chamber; a vacuum apparatus connected to the vacuum chamber; a holder placed in the vacuum chamber, which holder holds a substrate and is rotated by means of a rotating mechanism; a plasma CVD apparatus; and a sputtering apparatus, wherein the plasma CVD apparatus and the sputtering apparatus are placed in a single vacuum chamber and a thin film having an medium refractive index is formed on the substrate held by the holder, by means of the plasma CVD apparatus and the sputtering apparatus. The method making use of such an apparatus is also disclosed.