Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

Abstract: Methods and related systems for forming an EUV-sensitive layer. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse and a second precursor pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises two or more acyl halide functional groups. The second precursor pulse comprises exposing the substrate to a second precursor. In some embodiments, the second precursor comprises two or more hydroxyl functional groups.

Abstract: Gas-phase methods of forming radiation-sensitive, patternable material and systems for forming the material. Exemplary methods include gas-phase formation of a layer comprising a polymeric material that forms the radiation-sensitive, patternable material on a surface of the substrate. Portions of the layer comprising the polymeric material can be exposed to radiation or active species to form exposed and unexposed regions. Material can be selectively deposed onto the exposed or unexposed portions and/or one of the exposed and unexposed regions can be selectively removed. One or more method steps can be performed within a reaction chamber and/or a reactor system.

Abstract: Methods for patterning and forming structures, as well as related structures and systems are disclosed. The methods comprise forming a liner on sidewalls of a patterned resist. The patterned resist comprises a first metal, and the liner comprises a second metal.

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (??) of greater than 2×106 cm2/mol.

Abstract: Methods of forming patterned features and structures including the patterned features are disclosed. Exemplary methods include selectively forming a surface energy modified surface on a sidewall of structures and/or forming a surface-energy tunable layer on a surface of the substrate. The surface energy modified surface can be formed by depositing material and/or by treating the sidewall surface and/or by treating a surface adjacent the sidewall surface.

Abstract: Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include gas-phase formation of a layer comprising an oxalate compound on a surface of the substrate. Portions of the layer comprising the oxalate compound can be exposed to radiation or active species that form exposed and unexposed portions. Material can be selectively deposed onto the exposed or the unexposed portions.

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.

Abstract: According to an aspect of the disclosed technology, a method for forming a gate of a semiconductor device is disclosed. The method includes depositing a sacrificial material to form a preliminary sacrificial gate fill structure, etching back an upper surface of the preliminary sacrificial gate fill structure to obtain a final sacrificial gate fill structure, and replacing the sacrificial material of the final sacrificial gate fill structure with a conductive gate fill material by a conversion reaction, thereby forming a gate electrode of the semiconductor device. By replacing the sacrificial material with a conductive gate fill material rather than depositing and subsequently etching a conductive gate fill layer, surface of the conductive gate fill material is made relatively smooth.