Patents by Inventor Yoav Lavi

Yoav Lavi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050225807
    Abstract: Embodiments of the current invention provide for systems and methods for correcting shading effects in image sensors. More specifically, but not by way of limitation, embodiments of the current invention provide methods and systems for dynamically correcting shading effects for digitally converted outputs from individual pixels on a pixel array in the image sensor, wherein the shading correction may be calculated according to a function of an elliptical-type equation from the radial location of the pixel on the pixel array. In embodiments of the present invention, the correction is performed at the Bayer domain before demosaicing processing to provide for accuracy of shading correction and low power consumption.
    Type: Application
    Filed: April 6, 2005
    Publication date: October 13, 2005
    Applicant: TransChip, Inc.
    Inventors: Eugene Fainstain, Shlomo Polonsky, Miriam Fraenkel, Yoav Lavi
  • Patent number: 6950977
    Abstract: A system and method for improving error detection and correction for transmitted data. An iterative error detection method is used to determine a relative likelihood that decoded data is an accurate representation of the original data. An independent error correction unit operates on the decoded data and a result from the independent error correction unit is injected into the iterative error detection method to improve the reliability of the error detection method.
    Type: Grant
    Filed: March 15, 2002
    Date of Patent: September 27, 2005
    Assignee: 3G.com, Inc.
    Inventors: Yoav Lavi, Alon Boner
  • Patent number: 6934732
    Abstract: A correlator circuit for calculating the correlation between a signal sequence and a binary reference sequence. A unique method of calculating the correlation value between the two sequences provides for the reduction in necessary computations and, as a result, a reduction in the amount of time expended in calculating the correlation is realized.
    Type: Grant
    Filed: February 4, 2002
    Date of Patent: August 23, 2005
    Assignee: 3G. Com, Inc.
    Inventor: Yoav Lavi
  • Publication number: 20020166095
    Abstract: A system and method for improving error detection and correction for transmitted data. An iterative error detection method is used to determine a relative likelihood that decoded data is an accurate representation of the original data. An independent error correction unit operates on the decoded data and a result from the independent error correction unit is injected into the iterative error detection method to improve the reliability of the error detection method.
    Type: Application
    Filed: March 15, 2002
    Publication date: November 7, 2002
    Applicant: 3G.com, Inc.
    Inventors: Yoav Lavi, Alon Boner
  • Publication number: 20020138532
    Abstract: A correlator circuit for calculating the correlation between a signal sequence and a binary reference sequence. A unique method of calculating the correlation value between the two sequences provides for the reduction in necessary computations and, as a result, a reduction in the amount of time expended in calculating the correlation is realized.
    Type: Application
    Filed: February 4, 2002
    Publication date: September 26, 2002
    Applicant: 3G.com, Inc.
    Inventor: Yoav Lavi
  • Patent number: 6453407
    Abstract: A method for executing instructions in a data processor and improvements to data processor design, which combine the advantages of regular processor architecture and Very Long Instruction Word architecture to increase execution speed and ease of programming, while reducing power consumption. Instructions each consisting of a number of operations to be performed in parallel are defined by the programmer, and their corresponding execution unit controls are generated at compile time and loaded prior to program execution into a dedicated array in processor memory. Subsequently, the programmer invokes reference instructions to call these defined instructions, and passes parameters from regular instructions in program memory. As the regular instructions propogate down the processor's pipeline, they are replaced by the appropriate controls fetched from the dedicated array in processor memory, which then go directly to the execution unit for execution.
    Type: Grant
    Filed: February 10, 1999
    Date of Patent: September 17, 2002
    Assignee: Infineon Technologies AG
    Inventors: Yoav Lavi, Amnon Rom, Robert Knuth, Rivka Blum, Meny Yanni, Haim Granot, Anat Hershko, Georgiy Shenderovitch, Elliot Cohen, Eran Weingatren
  • Patent number: 6396896
    Abstract: A circuit for providing a function of a plurality of consecutive bits in a shift register is provided. The circuit includes a 2-input logic gate having a first input terminal connected to receive a bit being shifted into the shift register, and a second input terminal coupled to receive a bit being shifted out of the shift register. The circuit further includes a sequential logic device having an input terminal coupled to an output terminal of the 2-input logic gate, an output terminal that provides the function, and a control terminal coupled to receive a control signal for resetting the sequential logic device. In one embodiment, the 2-input logic gate is an exclusive OR gate, and the sequential logic device is a toggle flip-flop. In this embodiment, the function is a logical exclusive OR of the consecutive bits in the shift register. The function is implemented by initializing an output signal of the sequential logic device when the consecutive bits of the shift register have a predetermined value.
    Type: Grant
    Filed: April 28, 2000
    Date of Patent: May 28, 2002
    Assignee: 3G.com Inc.
    Inventor: Yoav Lavi
  • Patent number: 6339540
    Abstract: Five architectures for the implementation of virtual ground non-volatile content-addressable memory are provided. Three of the architectures are applicable to 2-bit non-volatile memory transistors having separate programming capability for two current directions (i.e., drain-to-source and source-to-drain. Another architecture is applicable to any floating gate memory transistor, including 1-bit and 2-bit non-volatile memory transistors. In general, an array of non-volatile memory transistors is arranged in a plurality of horizontal rows and vertical columns. Words are stored in selected columns of the array. Horizontal compare lines are coupled to receive a comparand word, with each compare line being coupled to the gates of the memory transistors in a row of the array. The vertically aligned source/drain regions of the memory transistors are coupled to form word lines. Sense amplifiers are coupled to selected word lines.
    Type: Grant
    Filed: December 5, 2000
    Date of Patent: January 15, 2002
    Assignee: Tower Semiconductor Ltd.
    Inventor: Yoav Lavi
  • Publication number: 20010021126
    Abstract: An electrically erasable programmable read only memory block is provided which includes a plurality of rows of 2-bit non-volatile memory cells. Each of the memory cells has a first charge trapping region for storing a first bit and a second charge trapping region for storing a second bit. Each pair of adjacent memory cells in each row are coupled to share a common diffusion bit line. A plurality of metal bit lines are coupled to the diffusion bit lines through high voltage select transistors. In one embodiment, there are half as many metal bit lines as diffusion bit lines.
    Type: Application
    Filed: May 10, 2001
    Publication date: September 13, 2001
    Applicant: Tower Semiconductor Ltd.
    Inventors: Yoav Lavi, Ishai Nachumovsky
  • Patent number: 6256231
    Abstract: A structure and method for implementing an EEPROM using 2-bit non-volatile memory cells. Each memory cell has a first charge trapping region for storing a first bit and a second charge trapping region for storing a second bit. The memory cells are arranged in one or more rows, with a word line coupling the gates of all of the memory cells in each row. Diffusion bit lines couple the first charge trapping region of each memory cell with the second charge trapping region of an adjacent memory cell. When the first charge trapping region of a memory cell is erased, the second charge trapping region of the adjacent memory cell is incidentally erased. This incidental erasure is effectively avoided by: (1) reading the bit stored in the second charge trapping region, (2) writing this bit to a storage device, (3) performing the erase operation, and then (4) restoring the bit from the storage device to the second charge trapping region of the adjacent memory cell.
    Type: Grant
    Filed: February 4, 1999
    Date of Patent: July 3, 2001
    Assignee: Tower Semiconductor Ltd.
    Inventors: Yoav Lavi, Ishai Nachumovsky
  • Patent number: 6108240
    Abstract: A method and apparatus for erasing a single floating gate transistor in an array of floating gate transistors is provided. A selected floating gate transistor, which is located in a first row and a first column of the array, is erased as follows. A low voltage V.sub.LOW (e.g., 0 Volts) is applied to the gate of each transistor in the first row of the array. An erase voltage V.sub.ERASE (e.g., 8 Volts) is applied to the drain of each transistor in the first column of the array. An intermediate voltage V.sub.INT (e.g., 3 Volts) is applied to the source of each transistor in the array, as well as to the drain of each transistor of the array that is not in the first column. Under these conditions, only the selected floating gate transistor is erased. Other floating gate transistors in the first column are not erased because the gate-to-drain voltages of these transistors are limited by the intermediate voltage V.sub.INT applied to their gates.
    Type: Grant
    Filed: February 4, 1999
    Date of Patent: August 22, 2000
    Assignee: Tower Semiconductor Ltd.
    Inventors: Yoav Lavi, Oleg Dadashev
  • Patent number: 4697241
    Abstract: Apparatus for verifying the design of a logic circuit composed of a plurality of interconnected logic elements comprises a plurality of hardware gates, each of which is programmable so as to correspond to and emulate an element in said logic circuit. Each hardware gate has an output and at least two inputs. A selectively operable interconnection system is provided for establishing a connection between the output of any hardware gate and an input of any hardware gate. A multiplexing system is also provided for operating the interconnection system and determining which, and when, each connection is made between the output of any hardware gate and an input of any hardware gate.
    Type: Grant
    Filed: March 1, 1985
    Date of Patent: September 29, 1987
    Assignee: Simulog, Inc.
    Inventor: Yoav Lavi
  • Patent number: 4377855
    Abstract: A content-addressable memory (CAM) has an array of four-transistor memory cells arranged in rows corresponding to stored words and columns corresponding to a selected search word. Complementary column lines couple signals associated with the bits of the search word to the memory cells associated with all of the stored words in parallel. The memory cells of each row are coupled to a common sense line and cause a current to flow on the sense line in response to the search word not matching the data word associated with that row.Writing is accomplished by discharging one of the sense lines and applying signals representative of the desired word to be stored to the column lines. Since the ground lines are not unique to any row, they can be shared between adjacent rows or columns as best suits the layout of the circuit.A status bit is associated with each stored word and is used to selectively activate the sense amplifier associated with each row.
    Type: Grant
    Filed: November 6, 1980
    Date of Patent: March 22, 1983
    Assignee: National Semiconductor Corporation
    Inventor: Yoav Lavi