Patents by Inventor Yoga Saripalli

Yoga Saripalli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Material with tunable index of refraction
    Patent number: 8900897
    Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: December 2, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Philip Kraus, Thai Cheng Chua, Yoga Saripalli
  • MATERIAL WITH TUNABLE INDEX OF REFRACTION
    Publication number: 20140191262
    Abstract: Devices are described including a component comprising an alloy of AlN and AlSb. The component has an index of refraction substantially the same as that of a semiconductor in the optoelectronic device, and has high transparency at wavelengths of light used in the optoelectronic device. The component is in contact with the semiconductor in the optoelectronic device. The alloy comprises between 0% and 100% AlN by weight and between 0% and 100% AlSb by weight. The semiconductor can be a III-V semiconductor such as GaAs or AlGaInP. The component can be used as a transparent insulator. The alloy can also be doped to form either a p-type conductor or an n-type conductor, and the component can be used as a transparent conductor. Methods of making and devices utilizing the alloy are also disclosed.
    Type: Application
    Filed: January 10, 2013
    Publication date: July 10, 2014
    Applicant: Intermolecular Inc.
    Inventors: Philip Kraus, Thai Cheng Chua, Yoga Saripalli
  • GaN Epitaxy With Migration Enhancement and Surface Energy Modification
    Publication number: 20130313566
    Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.
    Type: Application
    Filed: August 1, 2013
    Publication date: November 28, 2013
    Applicant: Intermolecular, Inc.
    Inventors: Philip A. Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan, Yoga Saripalli
  • GaN epitaxy with migration enhancement and surface energy modification
    Patent number: 8524581
    Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: September 3, 2013
    Assignee: Intermolecular, Inc.
    Inventors: Philip A. Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan, Yoga Saripalli
  • GaN Epitaxy With Migration Enhancement and Surface Energy Modification
    Publication number: 20130171805
    Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.
    Type: Application
    Filed: December 29, 2011
    Publication date: July 4, 2013
    Applicant: Intermolecular Inc.
    Inventors: Philip A. Kraus, Boris Borisov, Thai Cheng Chua, Sandeep Nijhawan, Yoga Saripalli