Patents by Inventor Yoginder Anand

Yoginder Anand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reduced parasitic capacitance semiconductor devices
    Patent number: 6310394
    Abstract: Semiconductor devices comprise a substrate having a semiconductor disposed thereon with a layer of dielectric material, less than 10 microns thick, disposed about the semiconductor; the dielectric layer has a bond pad disposed on its upper surface a via lined with an electrically conductive material and extending between the bond pad and the semiconductor form an electrically conductive path between the semiconductor device and the bond pad.
    Type: Grant
    Filed: August 25, 1998
    Date of Patent: October 30, 2001
    Assignee: Tyco Electronics
    Inventors: Yoginder Anand, Percy Bomi Chinoy
  • Reduced parasitic capacitance semiconductor devices
    Patent number: 5883422
    Abstract: A semiconductor device structure having a semiconductor device on a substrate with a layer of benzocyclobutane (BCB) disposed about the device with a via between the top surface of the BCB and the device is disclosed. A bond pad is in contact with the via and is connected to a bond ribbon.
    Type: Grant
    Filed: August 16, 1996
    Date of Patent: March 16, 1999
    Assignee: The Whitaker Corporation
    Inventors: Yoginder Anand, Percy Bomi Chinoy
  • Semiconductor diode
    Patent number: 5329151
    Abstract: The disclosed improved GaAs majority carrier rectifying barrier diodes comprise a p.sup.+ region between semiconductor regions that comprise n-doped material. Exemplary structures are n.sup.+ -i-p.sup.+ -i-n.sup.+ and n.sup.+ -n-p.sup.+ -n-n.sup.+. The improvement comprises use of carbon as the p-dopant and results in readily manufacturable reliable devices.
    Type: Grant
    Filed: April 9, 1993
    Date of Patent: July 12, 1994
    Assignee: AT&T Bell Laboratories
    Inventors: Yoginder Anand, Roger J. Malik
  • Zero-bias Schottky barrier detector diodes
    Patent number: 3968272
    Abstract: Metal-silicide-silicon Schottky barrier diodes are made by a process which yields the characteristic of low barrier height, in the region of 0.15 volt, suitable for use without dc bias as a detector at microwave frequencies. Low barrier height metals, such as palladium, platinum and hafnium are processed through heat treatment steps which reduce the barrier height below that which is typical of point contact diodes.
    Type: Grant
    Filed: January 25, 1974
    Date of Patent: July 6, 1976
    Assignee: Microwave Associates, Inc.
    Inventor: Yoginder Anand