Abstract: A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: Some examples described herein provide for a heterogeneous integration module (HIM) that includes a thermal management apparatus. In an example, an apparatus (e.g., a HIM) includes a wiring substrate, a first component, a second component, and a thermal management apparatus. The first component and the second component are communicatively coupled together via the wiring substrate. The thermal management apparatus is in thermal communication with the first component and the second component. The thermal management apparatus has a first thermal energy flow path for dissipating thermal energy generated by the first component and has a second thermal energy flow path for dissipating thermal energy generated by the second component. The first thermal energy flow path has a lower thermal resistivity than the second thermal energy flow path.

Abstract: Chip packages and methods for fabricating the same are provided which utilize a first heat spreader interfaced with a first integrated circuit (IC) die and a second heat spreader separately interfaced with a second IC die. The separate heat spreaders allow the force applied to the first IC die to be controlled independent of the force applied to the second IC die.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: An example method for clock and data recovery (CDR) includes generating, in a set of slicers of a receiver, in addition to a data signal and a first error signal, at least one additional error signal. The method further includes receiving, at a frequency detector (FD) of a CDR unit of the receiver, the data signal, the first error signal, and the at least one additional error signal, and processing them to generate a FD output. The method still further includes multiplying the FD output by a user-defined FD gain, and adding the FD output, as multiplied by the FD gain, in a frequency path of the CDR unit.

Abstract: A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

Abstract: An example method for clock and data recovery (CDR) includes generating, in a set of slicers of a receiver, in addition to a data signal and a first error signal, at least one additional error signal. The method further includes receiving, at a frequency detector (FD) of a CDR unit of the receiver, the data signal, the first error signal, and the at least one additional error signal, and processing them to generate a FD output. The method still further includes multiplying the FD output by a user-defined FD gain, and adding the FD output, as multiplied by the FD gain, in a frequency path of the CDR unit.

Abstract: Some examples described herein provide for a heterogeneous integration module (HIM) that includes a thermal management apparatus. In an example, an apparatus (e.g., a HIM) includes a wiring substrate, a first component, a second component, and a thermal management apparatus. The first component and the second component are communicatively coupled together via the wiring substrate. The thermal management apparatus is in thermal communication with the first component and the second component. The thermal management apparatus has a first thermal energy flow path for dissipating thermal energy generated by the first component and has a second thermal energy flow path for dissipating thermal energy generated by the second component. The first thermal energy flow path has a lower thermal resistivity than the second thermal energy flow path.

Abstract: An improved chip package, and methods for fabricating the same are provided that utilize two tier packaging of an optical die and another die commonly disposed over a substrate. In one example, a chip package is provided that includes an optical die, a core die, and an electrical/optical interface die are all disposed over a common substrate. In one example, a first routing region is provided between the core and electrical/optical interface dies, a second routing region is provided between the electrical/optical interface die and the optical dies, and a third routing region is disposed between the substrate and the core and electrical/optical interface dies.

Abstract: A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: Examples described herein provide for an isolation design for an inductor of a stacked integrated circuit device. An example is a multi-chip device comprising a chip stack comprising: a plurality of chips, neighboring pairs of the plurality of chips being bonded together, each chip comprising a semiconductor substrate, and a front side dielectric layer on a front side of the semiconductor substrate; an inductor disposed in a backside dielectric layer of a first chip of the plurality of chips, the backside dielectric layer being on a backside of the semiconductor substrate of the first chip opposite from the front side of the semiconductor substrate of the first chip; and an isolation wall extending from the backside dielectric layer of the first chip to the front side dielectric layer, the isolation wall comprising a through substrate via of the first chip, the isolation wall being disposed around the inductor.

Abstract: A method relates generally to comparison of a communications system modelled with a behavioral model and implemented with a circuit realization. In this method, operation of the communications system is simulated with the behavioral model on a computing device to obtain a first pulse response. The simulating includes first equalizing first data with a first equalizer of the behavioral model to obtain the first pulse response. The circuit realization is operated to obtain a second pulse response. The operating includes: second equalizing second data corresponding to the first data with a second equalizer of the circuit realization to obtain the second pulse response. The second pulse response from the circuit realization is loaded to memory of the computing device. The first pulse is loaded to the memory of the computing device. The first pulse response and the second pulse response are compared with one another by the computing device.

Abstract: Examples described herein provide for an isolation design for an inductor of a stacked integrated circuit device. An example is a multi-chip device comprising a chip stack comprising: a plurality of chips, neighboring pairs of the plurality of chips being bonded together, each chip comprising a semiconductor substrate, and a front side dielectric layer on a front side of the semiconductor substrate; an inductor disposed in a backside dielectric layer of a first chip of the plurality of chips, the backside dielectric layer being on a backside of the semiconductor substrate of the first chip opposite from the front side of the semiconductor substrate of the first chip; and an isolation wall extending from the backside dielectric layer of the first chip to the front side dielectric layer, the isolation wall comprising a through substrate via of the first chip, the isolation wall being disposed around the inductor.

Abstract: Examples described herein generally relate to a temperature-locked loop for optical elements. In an example, a device includes a controller and a digital-to-analog converter (DAC). The controller includes a DC-controllable transimpedance stage (DCTS), a slicer circuit, and a processor. The DCTS is configured to be coupled to a photodiode. An input node of the slicer circuit is coupled to an output node of the DCTS. The processor has an input node coupled to an output node of the slicer circuit. The DAC has an input node coupled to an output node of the processor and is configured to be coupled to a heater. The processor is configured to control (i) the DCTS to reduce a DC component of a signal on the output node of the DCTS and (ii) an output voltage on the output node of the DAC, both based on a signal output by the slicer circuit.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: Apparatus and associated methods relate to implementing an analog auxiliary clock and data recovery (CDR) path to provide a high bandwidth CDR in a transceiver that supports both PAM4 and NRZ signaling. In an illustrative example, the auxiliary CDR path may include a phase-frequency detector (PFD)-based phase-locked loop (PLL) and a phase detector (PD)-based PLL. When the PFD-based PLL is locked to a reference clock signal of the transceiver, the PFD-based PLL may be then disabled and the PD-based PLL may be then enabled. Implementing the auxiliary CDR path may advantageously enable the transceiver to implement much larger parts per million (ppm) acquisition and tracking, and thus enable the transceiver to advantageously support new standards such as Peripheral Component Interconnect Express (PCIe) 5.0 and PCIe 6.0, for example.

Abstract: Apparatus and associated methods relating to reducing lock time include pre-calibrating and storing phase-locked loop (PLL) and/or injection-locked oscillator (ILO) adaptation values during startup and loading the pre-calibrated values during rate change. In an illustrative example, an integrated circuit may include a controllable frequency circuit operable at frequencies within each of a plurality of frequency bands. A data store may store operational settings associated with each frequency of the plurality of frequency bands. A state machine may be coupled to the controllable frequency circuit and the data store configured to select a predetermined frequency band in response to a command signal, retrieve, from the data store, operational settings associated with the predetermined frequency band, and, apply the retrieved operational settings to the controllable frequency circuit.

Abstract: Apparatus and associated methods relating to reducing lock time include pre-calibrating and storing phase-locked loop (PLL) and/or injection-locked oscillator (ILO) adaptation values during startup and loading the pre-calibrated values during rate change. In an illustrative example, an integrated circuit may include a controllable frequency circuit operable at frequencies within each of a plurality of frequency bands. A data store may store operational settings associated with each frequency of the plurality of frequency bands. A state machine may be coupled to the controllable frequency circuit and the data store configured to select a predetermined frequency band in response to a command signal, retrieve, from the data store, operational settings associated with the predetermined frequency band, and, apply the retrieved operational settings to the controllable frequency circuit.