Abstract: A shielding member, wherein the shielding member is formed of at least one of structure which has a non-flat plate shape having an inclined surface, and the inclined surface is located on a side of a substrate support part when the shielding member is disposed in a single crystal growth device, wherein the single crystal growth device comprising: a crystal growth container; a source storage part that is positioned at a lower inner part of the crystal growth container; the substrate support part, wherein the support part is disposed above the source storage part and supports a substrate to make the substrate face the source storage part; and a heating device that is disposed on an outer circumference of the crystal growth container, wherein the shielding member is disposed between the source storage part and the substrate support part, and wherein a single crystal of a source is grown on the substrate by sublimating the source from the source storage part.

Abstract: A shielding member includes a plurality of shielding plates, in which the plurality of shielding plates are arranged without gaps therebetween in a plan view from a crystal installation part, and the shielding member is disposed between a source material accommodation part and the crystal installation part, in an apparatus for growing single crystals, wherein the apparatus includes a container for crystal growth that has the source material accommodation part at an inner bottom part, and has the crystal installation part that faces the source material accommodation part, and includes a heating part that is configured to heat the container for crystal growth, in which a single crystal of the source material is grown on a crystal installed in the crystal installation part by subliming the source material from the source material accommodation part.

Abstract: The present invention provides a heat-insulating shield member, wherein the heat-insulating shield member is arranged and used between a SiC source housing (3) and a substrate support (4) in a single crystal manufacturing apparatus (10), wherein the single crystal manufacturing apparatus (10) comprises a crystal growth container (2) and a heating member (5) arranged on an outer periphery of the crystal growth container (2), wherein the crystal growth container (2) includes the SiC source housing (3) disposed at a lower portion of the apparatus, and the substrate support (4) which is arranged above the SiC source housing (3) and supports a substrate (S) used for crystal growth so as to face the SiC source housing (3), and wherein the single crystal manufacturing apparatus (10) is configured to grow a single crystal (W) from a SiC source (M) on the substrate (S) by sublimating the SiC source (M) from the SiC source housing (3).

Abstract: The present invention provides a crucible and a SiC single crystal growth apparatus capable of improving the efficiency of using source materials. The crucible includes a lid and a container. The container includes a bottom facing the lid. The bottom includes a recess which is recessed towards the lid.

Abstract: A silicon carbide single crystal is grown by a method comprising: a single crystal growth step of growing a silicon carbide single crystal so as to not close a gap between a side surface of the silicon carbide single crystal growing on a silicon carbide seed crystal, and an inner-side surface of a guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step of terminating crystal growth by temperature lowering; and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, Pin?Pout, between partial pressure Pin of Si2C in a source gas in the vicinity of an inlet of the gap and partial pressure Pout of Si2C in a source gas in the vicinity of an outlet of the gap at 0.18 torr or less.

Abstract: A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.

Abstract: A method of processing a SiC single crystal includes a measuring step of measuring a shape of an atomic arrangement plane of the SiC single crystal along at least a first direction passing through a center in plan view and a second direction orthogonal to the first direction; and a surface processing step of processing a first plane serving as an attachment plane of the SiC single crystal, in which the surface processing step includes a grinding step of grinding the first plane, and in the grinding step, a difference is given to a surface state between the first plane and a second plane facing the first plane, and the atomic arrangement plane is flattened by Twyman's effect.

Abstract: A method of measuring a SiC ingot includes a measuring step of measuring a curving direction of an atomic arrangement plane of a SiC single crystal at least along a first direction passing through a center in plan view and a second direction intersecting with the first direction to obtain a shape of the atomic arrangement plane; and a crystal growth step of performing crystal growth using the SiC single crystal as a seed crystal, in which in a case where the shape of the atomic arrangement plane measured in the measuring step is a saddle type, a crystal growth condition in the crystal growth step is set such that a convexity of a second growth front at the end of crystal growth becomes larger than a convexity of a first growth front when an amount of crystal growth in the center of the seed crystal is 7 mm.

Abstract: The present invention provides a method including: a temperature raising step of raising a temperature in a crystal growing furnace with a silicon carbide raw material and a silicon carbide seed crystal arranged therein to a crystal growing temperature; a single crystal growing step of maintaining the crystal growing temperature and causing a silicon carbide single crystal to grow on the silicon carbide seed crystal; and a temperature lowering step of lowering the temperature in the crystal growing furnace from the crystal growing temperature to stop growth of the silicon carbide single crystal, in which the method further comprises, between the single crystal growing step and the temperature lowering step, a temperature lowering preparation step of maintaining the temperature in the crystal growing furnace at the crystal growing temperature and causing concentration of nitrogen gas in the crystal growing furnace to increase to be higher than concentration of nitrogen gas in the temperature raising step and i