Patents by Inventor Yohei Oishi
Yohei Oishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10935029Abstract: A motor pump capable of preventing deformation of a resin-made motor casing due to heat while securing a mechanical strength of the motor casing is disclosed. The motor pump includes a motor casing made of resin. The motor stator is disposed in the motor casing. The motor casing includes a partition wall located between the impeller and stator coils, ribs extending radially, and an inner frame connected to an inner edge of the partition wall. The partition wall is fixed to the ribs. The motor casing has guide protrusions formed on an outer surface of the inner frame, and further has recesses formed between the guide protrusions.Type: GrantFiled: February 14, 2019Date of Patent: March 2, 2021Assignee: Ebara CorporationInventors: Takayuki Kuronuma, Yohei Oishi
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Publication number: 20190257319Abstract: A motor pump capable of preventing deformation of a resin-made motor casing due to heat while securing a mechanical strength of the motor casing is disclosed. The motor pump includes a motor casing made of resin. The motor stator is disposed in the motor casing. The motor casing includes a partition wall located between the impeller and stator coils, ribs extending radially, and an inner frame connected to an inner edge of the partition wall. The partition wall is fixed to the ribs. The motor casing has guide protrusions formed on an outer surface of the inner frame, and further has recesses formed between the guide protrusions.Type: ApplicationFiled: February 14, 2019Publication date: August 22, 2019Applicant: Ebara CorporationInventors: Takayuki KURONUMA, Yohei OISHI
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Publication number: 20190203724Abstract: A pump apparatus is provided with a tank in which a handled-fluid having insulating properties is stored, and with a pump that is mounted in the tank. The pump has an impeller in which a magnet is embedded, a motor stator that is disposed at a position opposing the magnet, a pump casing that houses the impeller, and a motor casing that houses the motor stator. The motor casing is open such that a winding of the motor stator is immersed in the handled-fluid.Type: ApplicationFiled: December 19, 2018Publication date: July 4, 2019Inventors: Takayuki KURONUMA, Yohei OISHI
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Patent number: 10262866Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: GrantFiled: January 29, 2018Date of Patent: April 16, 2019Assignees: International Business Machines Corporation, JSR CORPORATIONInventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20180166292Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: ApplicationFiled: January 29, 2018Publication date: June 14, 2018Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: 9916985Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: GrantFiled: May 20, 2016Date of Patent: March 13, 2018Assignees: International Business Machines Corporation, JSR CORPORATIONInventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: 9890300Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: GrantFiled: April 18, 2017Date of Patent: February 13, 2018Assignees: International Business Machines Corporation, JSR CorporationInventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170218229Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: ApplicationFiled: April 18, 2017Publication date: August 3, 2017Inventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: 9646842Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: GrantFiled: May 20, 2016Date of Patent: May 9, 2017Assignees: International Business Machines Corporation, JSR CORPORATIONInventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: 9646841Abstract: A chemical mechanical planarization for a Group III arsenide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. A Group III arsenide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The Group III arsenide material is planarized using at least one slurry composition to form coplanar surfaces of the Group III arsenide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the Group III arsenide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of an arsine gas.Type: GrantFiled: May 20, 2016Date of Patent: May 9, 2017Assignees: International Business Machines Corporation, JSR CorporationInventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170110332Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.Type: ApplicationFiled: May 20, 2016Publication date: April 20, 2017Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170110333Abstract: A chemical mechanical planarization for a Group III arsenide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. A Group III arsenide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The Group III arsenide material is planarized using at least one slurry composition to form coplanar surfaces of the Group III arsenide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the Group III arsenide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of an arsine gas.Type: ApplicationFiled: May 20, 2016Publication date: April 20, 2017Inventors: Henry A. Beveridge, Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Publication number: 20170110334Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.Type: ApplicationFiled: May 20, 2016Publication date: April 20, 2017Inventors: Tatsuyoshi Kawamoto, Mahadevaiyer Krishnan, Yohei Oishi, Dinesh Kumar Penigalapati, Rachel S. Steiner, James A. Tornello, Tatsuya Yamanaka
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Patent number: D906243Type: GrantFiled: July 29, 2019Date of Patent: December 29, 2020Assignee: EBARA CORPORATIONInventors: Yohei Oishi, Takahide Ozawa, Kazuma Nishimura, Takayuki Kuronuma, Akihiro Ochiai, Ryoko Ikegami, Prateek Ninave, Naoki Katayama
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Patent number: D906256Type: GrantFiled: July 29, 2019Date of Patent: December 29, 2020Assignee: EBARA CORPORATIONInventors: Yohei Oishi, Takahide Ozawa, Kazuma Nishimura, Takayuki Kuronuma, Akihiro Ochiai, Ryoko Ikegami, Prateek Ninave, Naoki Katayama
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Patent number: D924800Type: GrantFiled: July 29, 2019Date of Patent: July 13, 2021Assignee: EBARA CORPORATIONInventors: Yohei Oishi, Takahide Ozawa, Kazuma Nishimura, Takayuki Kuronuma, Akihiro Ochiai, Ryoko Ikegami, Prateek Ninave, Naoki Katayama
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Patent number: D925449Type: GrantFiled: July 29, 2019Date of Patent: July 20, 2021Assignee: EBARA CORPORATIONInventors: Yohei Oishi, Takahide Ozawa, Kazuma Nishimura, Takayuki Kuronuma, Akihiro Ochiai, Ryoko Ikegami, Prateek Ninave, Naoki Katayama
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Patent number: D1024963Type: GrantFiled: August 10, 2022Date of Patent: April 30, 2024Assignee: EBARA CORPORATIONInventors: Akihiro Ochiai, Kazuma Nishimura, Yohei Oishi, Takahide Ozawa, Masayuki Nagai, Shin Takahashi, Yuhei Shinchi