Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes an insulating substrate, a semiconductor chip, a plate member, and a cooler. The insulating substrate includes insulating ceramics serving as an insulating plate, and conductive plates provided on opposite surfaces of the insulating ceramics. The semiconductor chip is provided on an upper surface of the insulating substrate. The plate member is bonded to a lower surface of the insulating substrate. The cooler is bonded to a lower surface of the plate member. At least one of bonding between a lower surface of the insulating substrate and the plate member and bonding between a lower surface of the plate member and the cooler is performed via a bonding member composed mainly of tin. Also, a cyclic stress of the plate member is smaller than a tensile strength of the bonding member.

Abstract: An insulated circuit board includes an insulated substrate, a first electrode, and a second electrode. A thin portion is formed in a corner portion, the corner portion being a region occupying, with regard to directions along outer edges from a vertex of at least one of the first and second electrodes in plan view, a portion of a length of the outer edges, and the thin portion has a thickness smaller than that of a region other than the thin portion. The thin portion in at least one of the first and second electrodes has a planar shape surrounded by first and second sides orthogonal to each other as portions of the outer edges from the vertex, and a curved portion away from the vertex of the first and second sides.

Abstract: An insulated circuit board includes an insulated substrate, a first electrode, and a second electrode. A thin portion is formed in a corner portion, the corner portion being a region occupying, with regard to directions along outer edges from a vertex of at least one of the first and second electrodes in plan view, a portion of a length of the outer edges, and the thin portion has a thickness smaller than that of a region other than the thin portion. The thin portion in at least one of the first and second electrodes has a planar shape surrounded by first and second sides orthogonal to each other as portions of the outer edges from the vertex, and a curved portion away from the vertex of the first and second sides.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes an insulating substrate, a semiconductor chip, a plate member, and a cooler. The insulating substrate includes insulating ceramics serving as an insulating plate, and conductive plates provided on opposite surfaces of the insulating ceramics. The semiconductor chip is provided on an upper surface of the insulating substrate. The plate member is bonded to a lower surface of the insulating substrate. The cooler is bonded to a lower surface of the plate member. At least one of bonding between a lower surface of the insulating substrate and the plate member and bonding between a lower surface of the plate member and the cooler is performed via a bonding member composed mainly of tin. Also, a cyclic stress of the plate member is smaller than a tensile strength of the bonding member.