Patents by Inventor Yohei Tanno
Yohei Tanno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11892828Abstract: Personal dependency related to fault tree construction is reduced, and the reliability of an operating machine is improved by improving the accuracy of a fault diagnosis.Type: GrantFiled: January 30, 2019Date of Patent: February 6, 2024Assignee: Hitachi, Ltd.Inventors: Yohei Tanno, Yuuki Shimizu
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Patent number: 10989220Abstract: A casing of a turbo machine includes a casing body having an inner space; an intake nozzle which is disposed on the casing body and through which a fluid is taken into the casing body; and a straightening vane disposed in the intake nozzle and having opposite ends located in a diameter direction of the intake nozzle. Only one of the opposite ends of the straightening vane is joined to an inner surface of the intake nozzle.Type: GrantFiled: November 14, 2017Date of Patent: April 27, 2021Assignee: Hitachi, Ltd.Inventors: Yohei Tanno, Tomohiro Naruse, Takeshi Kazama, Ryuhei Tsukahara
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Publication number: 20210041863Abstract: Personal dependency related to fault tree construction is reduced, and the reliability of an operating machine is improved by improving the accuracy of a fault diagnosis.Type: ApplicationFiled: January 30, 2019Publication date: February 11, 2021Inventors: Yohei TANNO, Yuuki SHIMIZU
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Publication number: 20190219065Abstract: A casing of a turbo machine includes a casing body having an inner space; an intake nozzle which is disposed on the casing body and through which a fluid is taken into the casing body; and a straightening vane disposed in the intake nozzle and having opposite ends located in a diameter direction of the intake nozzle. Only one of the opposite ends of the straightening vane is joined to an inner surface of the intake nozzle.Type: ApplicationFiled: November 14, 2017Publication date: July 18, 2019Inventors: Yohei TANNO, Tomohiro NARUSE, Takeshi KAZAMA, Ryuhei TSUKAHARA
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Patent number: 8695433Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.Type: GrantFiled: January 4, 2013Date of Patent: April 15, 2014Assignee: Hitachi, Ltd.Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno
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Patent number: 8365609Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.Type: GrantFiled: July 6, 2011Date of Patent: February 5, 2013Assignee: Hitachi, Ltd.Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno
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Patent number: 8186228Abstract: A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.Type: GrantFiled: February 10, 2011Date of Patent: May 29, 2012Assignee: Hitachi, Ltd.Inventors: Hiroyuki Ohta, Hiromi Shimazu, Yohei Tanno
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Publication number: 20110259112Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.Type: ApplicationFiled: July 6, 2011Publication date: October 27, 2011Applicant: Hitachi Ltd.Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno
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Patent number: 7992448Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.Type: GrantFiled: February 20, 2007Date of Patent: August 9, 2011Assignee: Hitachi, Ltd.Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno
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Publication number: 20110128113Abstract: A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.Type: ApplicationFiled: February 10, 2011Publication date: June 2, 2011Inventors: Hiroyuki OHTA, Hiromi Shimazu, Yohei Tanno
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Patent number: 7893810Abstract: A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.Type: GrantFiled: August 24, 2007Date of Patent: February 22, 2011Assignee: Hitachi, Ltd.Inventors: Hiroyuki Ohta, Hiromi Shimazu, Yohei Tanno
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Patent number: 7836755Abstract: In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.Type: GrantFiled: November 21, 2007Date of Patent: November 23, 2010Assignee: Hitachi, Ltd.Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno, Mari Uchida, Naoto Saito
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Patent number: 7793551Abstract: The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.Type: GrantFiled: August 1, 2008Date of Patent: September 14, 2010Assignee: Hitachi Construction Machinery Co., Ltd.Inventors: Hiromi Shimazu, Yohei Tanno, Hiroyuki Ohta, Ryuji Takada, Takayuki Shimodaira
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Patent number: 7584668Abstract: A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.Type: GrantFiled: August 7, 2007Date of Patent: September 8, 2009Assignee: Hitachi, Ltd.Inventors: Hiroyuki Ohta, Hiromi Shimazu, Yohei Tanno, Yoshihisa Kiyotoki, Kenji Onodera, Kenji Araki
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Publication number: 20090031819Abstract: The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.Type: ApplicationFiled: August 1, 2008Publication date: February 5, 2009Inventors: Hiromi Shimazu, Yohei Tanno, Hiroyuki Ohta, Ryuji Takada, Takayuki Shimodaira
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Publication number: 20080121024Abstract: In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.Type: ApplicationFiled: November 21, 2007Publication date: May 29, 2008Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno, Mari Uchida, Naoto Saito
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Publication number: 20080079531Abstract: A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.Type: ApplicationFiled: August 24, 2007Publication date: April 3, 2008Inventors: Hiroyuki OHTA, Hiromi SHIMAZU, Yohei TANNO
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Publication number: 20080034882Abstract: A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.Type: ApplicationFiled: August 7, 2007Publication date: February 14, 2008Inventors: Hiroyuki Ohta, Hiromi Shimazu, Yohei Tanno, Yoshihisa Kiyotoki, Kenji Onodera, Kenji Araki
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Publication number: 20070228500Abstract: A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a <100> direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a <110> direction.Type: ApplicationFiled: February 20, 2007Publication date: October 4, 2007Applicant: Hitachi, Ltd.Inventors: Hiromi Shimazu, Hiroyuki Ohta, Yohei Tanno