Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

Abstract: A compound semiconductor device includes a substrate; a compound semiconductor layer formed on the substrate; a first insulating film formed on the compound semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode, a source electrode, and a drain electrode, each being formed on the compound semiconductor layer, wherein the gate electrode is formed of a first opening filled with a first conductive material via at least a gate insulator, and the first opening is formed in the first insulating film and configured to partially expose the compound semiconductor layer, and wherein the source electrode and the drain electrode are formed of a pair of second openings filled with at least a second conductive material, and the second openings are formed in at least the second insulating film and the first insulating film and configured to partially expose the compound semiconductor layer.

Abstract: A surface layer portion of a silicon substrate is etched by using a mixed solution which contains ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2) and water (H2O) at a weight ratio of 1:(1.3 to 2.65):(275 to 433). The density of the etch pits which have occurred in a surface of the silicon substrate whose surface layer portion was etched by the etching step is measured. The crystal quality, etc. of the silicon substrate are evaluated before a process for manufacturing semiconductor devices using such silicon substrates, in order to avoid a lowering of the yields of the semiconductor devices.

Abstract: In wafer processes, after at least one layer which constitutes a structural member of a functional semiconductor element is formed on a semiconductor wafer, a brittle, excessive deposition on an edge of the semiconductor wafer is removed by grinding or etching of the wafer edge until the underlying wafer is exposed. The removal of the excessive deposition on the wafer edge reduces dust generation caused from crack and peel-off of the excessive deposition on the wafer edge, even if the wafer edge contacts a jig, and the like. Thus, the reduction in dust generation improves production yields of highly integrated semiconductor devices.

Abstract: An oiler cooler surrounding the head pipe of a motorcycle on three side and is fixed thereto. It is positioned vertically between the top bridge and the bottom bridge and laterally between the pair of left and right front fork pipes which are inserted through the top and bottom bridges. Upon turning, the cooler remains stationary relative to the motorcycle main frame.