Abstract: The present invention relates to: a jig for semiconductor production which is used for a CVD device in a semiconductor production process and contains a jig base and an SiC coating film formed on the jig base, in which the SiC coating film has a surface area ratio (surface area S2/surface area S1) between an apparent surface area S1 as calculated on the assumption that the surface is flat and free from unevenness and an actual surface area S2, of from 1.4 to 3.2; and a method for producing the jig for semiconductor production.

Abstract: The present invention relates to: a jig for semiconductor production which is used for a CVD device in a semiconductor production process and contains a jig base and an SiC coating film formed on the jig base, in which the SiC coating film has a surface area ratio (surface area S2/surface area S1) between an apparent surface area S1 as calculated on the assumption that the surface is flat and free from unevenness and an actual surface area S2, of from 1.4 to 3.2; and a method for producing the jig for semiconductor production.

Abstract: A semiconductor heat treatment member having a CVD-SiC film, which can reduce the frequency of cleaning steps and significantly improves the throughput of wafer process, is provided. A semiconductor heat treatment member is provided, which has a characteristic that when a Fourier amplitude spectrum of a cross-sectional profile of the CVD-SiC film deposited on the semiconductor heat treatment member obtained by observing the CVD-SiC film by a laser microscope with a magnification of from 400 to 600×, is integrated in ranges of 0.01???0.02 and 0.05???0.2, to obtain integral values of I1 and I2, respectively, then, I1 is at least 0.9 and 12 is at least 1.6.

Abstract: A method for joining high-purity ceramic parts useful as parts for semi-conductor production apparatus, in particular, ceramic jigs used in the production of semi-conductors. Two related joining methods are described. First, high purity ceramic parts made of silicon carbide are placed in contact with each other and a layer of silicon carbide is coated around the two SiC pieces by chemical vapor deposition (CVD). This vapor deposited coating serves to bind the parts tightly together. In a second procedure, the ceramic elements are placed next to each other at a spaced distance, preferably from 10–1,000 um. The space between the two ceramic elements is filled with SiC using a vapor deposition (CVD) technique. The resultant structure is such that the outer layers of the ceramic elements are continuously integrated with each other via SiC the ceramic material vapor deposited in the space. Combinations of the first and second procedures are taught.

Abstract: The present invention has an object to provide a joining method, whereby high-purity ceramic parts can be simply joined, a high strength joint durable even under a high temperature environment, is possible, and the method is applicable also to a complex shape.

Abstract: A highly corrosion-resistant silicon carbide product consisting of a sintered body having a content of .alpha.-form silicon carbide of at least 90 wt %, wherein the content of iron is at most 1 ppm, the content of aluminum is at most 5 ppm, and the content of calcium is at most 3 ppm.