Abstract: A substrate processing apparatus includes: a processing unit including a holder that holds a substrate and rotates the substrate, a nozzle that ejects a processing liquid, and a conductive piping unit that supplies the processing liquid to the nozzle; a controller that causes the processing unit to execute a liquid processing in which the substrate is processed by supplying the processing liquid from the nozzle to the substrate that is held and rotated by the holder, and a measuring unit that measures a flowing current generated by the processing liquid flowing through the piping unit. The controller monitors the liquid processing based on a measurement result by the measuring unit.

Abstract: A substrate processing apparatus includes a substrate holder that holds a substrate in a horizontal direction; a rotation driver that rotates the substrate holder; a first processing liquid nozzle that supplies a first processing liquid to a peripheral portion of the substrate; a first gas supply source that supplies a first gas at a first temperature to the peripheral portion of the substrate; and a second gas supply source that supplies a second gas at a second temperature to an inner side of the substrate in a radial direction. The first gas supply source includes a heater that heats the first gas into the first temperature, and a first gas ejection port that supplies the first gas heated by the heater through a conduit, and the second gas supply source includes a second gas ejection port that supplies the second gas through a gas supply pipe.

Abstract: There is provided a substrate processing apparatus including: a rotatable holding part configured to rotate a substrate while holding the substrate; a liquid supply part configured to supply a processing liquid to a peripheral edge portion of the substrate held by the rotatable holding part; a sensor configured to detect a temperature distribution at the peripheral edge portion; and a controller configured to execute an operation of detecting a boundary portion between a region of the peripheral edge portion to which the processing liquid adheres and a region of the peripheral edge portion to which the processing liquid does not adhere, based on the temperature distribution.

Abstract: There is provided a substrate processing apparatus including: a rotatable holding part configured to rotate a substrate while holding the substrate; a liquid supply part configured to supply a processing liquid to a peripheral edge portion of the substrate held by the rotatable holding part; a sensor configured to detect a temperature distribution at the peripheral edge portion; and a controller configured to execute an operation of detecting a boundary portion between a region of the peripheral edge portion to which the processing liquid adheres and a region of the peripheral edge portion to which the processing liquid does not adhere, based on the temperature distribution.

Abstract: A substrate processing apparatus includes a holding device that includes a conductive member and holds a substrate, a conduction path structure that includes a conductive material and positioned such that the conduction path structure is in contact with the holding device, a supply device that supplies a processing liquid to the substrate held by the holding device, and a grounding structure including a variable resistance device that changes a resistance such that the grounding structure has a first end portion connected the conduction path structure and a second end portion connected to a ground potential.

Abstract: A substrate processing apparatus includes: a processing unit including a holder that holds a substrate and rotates the substrate, a nozzle that ejects a processing liquid, and a conductive piping unit that supplies the processing liquid to the nozzle; a controller that causes the processing unit to execute a liquid processing in which the substrate is processed by supplying the processing liquid from the nozzle to the substrate that is held and rotated by the holder, and a measuring unit that measures a flowing current generated by the processing liquid flowing through the piping unit. The controller monitors the liquid processing based on a measurement result by the measuring unit.

Abstract: A substrate processing apparatus includes a substrate holder that holds a substrate in a horizontal direction; a rotation driver that rotates the substrate holder; a first processing liquid nozzle that supplies a first processing liquid to a peripheral portion of the substrate; a first gas supply source that supplies a first gas at a first temperature to the peripheral portion of the substrate; and a second gas supply source that supplies a second gas at a second temperature to an inner side of the substrate in a radial direction. The first gas supply source includes a heater that heats the first gas into the first temperature, and a first gas ejection port that supplies the first gas heated by the heater through a conduit, and the second gas supply source includes a second gas ejection port that supplies the second gas through a gas supply pipe.

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract: A substrate processing apparatus includes a holding device that includes a conductive member and holds a substrate, a conduction path structure that includes a conductive material and positioned such that the conduction path structure is in contact with the holding device, a supply device that supplies a processing liquid to the substrate held by the holding device, and a grounding structure including a variable resistance device that changes a resistance such that the grounding structure has a first end portion connected the conduction path structure and a second end portion connected to a ground potential.

Abstract: A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back

Abstract: A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back

Abstract: A particle can be suppressed from being generated by removing a processing liquid or crystals caused by the processing liquid which adhere to a cover member. A substrate processing apparatus includes a substrate holding unit 3 configured to hold a substrate W; a processing liquid supply unit 7 configured to supply a processing liquid onto the substrate W held in the substrate holding unit 3; and a cover member 5 which has a ring shape and is disposed to face a peripheral portion of the substrate held in the substrate holding unit 3. Further, the cover member 5 is equipped with a heater 701 configured to heat the cover member 5.

Abstract: A cleaning apparatus includes a first substrate-holding portion configured to hold a first area of a back surface of the substrate so that the top surface is kept face up; a second substrate-holding portion configured to hold a second area of the back surface of the substrate, the second area being not overlapped with the first area, and rotate the substrate; a top-surface cleaning nozzle configured to supply a top surface cleaning fluid to a top surface of the substrate; a bevel cleaning nozzle configured to supply a bevel cleaning fluid to a bevel portion of the substrate; a cleaning fluid supplying portion configured to supply a back surface cleaning fluid to the back surface of the substrate held by the first or the second substrate-holding portion; and a cleaning member configured to clean the back surface of the substrate held by the first or the second-substrate holding portion.

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract: A cleaning apparatus includes a first substrate-holding portion configured to hold a first area of a back surface of the substrate so that the top surface is kept face up; a second substrate-holding portion configured to hold a second area of the back surface of the substrate, the second area being not overlapped with the first area, and rotate the substrate; a top-surface cleaning nozzle configured to supply a top surface cleaning fluid to a top surface of the substrate; a bevel cleaning nozzle configured to supply a bevel cleaning fluid to a bevel portion of the substrate; a cleaning fluid supplying portion configured to supply a back surface cleaning fluid to the back surface of the substrate held by the first or the second substrate-holding portion; and a cleaning member configured to clean the back surface of the substrate held by the first or the second-substrate holding portion.

Abstract: A cleaning apparatus includes a first substrate-holding portion configured to hold a first area of a back surface of the substrate so that the top surface is kept face up; a second substrate-holding portion configured to hold a second area of the back surface of the substrate, the second area being not overlapped with the first area, and rotate the substrate; a top-surface cleaning nozzle configured to supply a top surface cleaning fluid to a top surface of the substrate; a bevel cleaning nozzle configured to supply a bevel cleaning fluid to a bevel portion of the substrate; a cleaning fluid supplying portion configured to supply a back surface cleaning fluid to the back surface of the substrate held by the first or the second substrate-holding portion; and a cleaning member configured to clean the back surface of the substrate held by the first or the second-substrate holding portion.

Abstract: Disclosed are a substrate processing apparatus and a substrate processing method configured to perform a processing of a substrate by a processing liquid, in which the processing liquid is supplied to a substrate which rotates to process the substrate. The substrate processing apparatus includes a substrate rotating unit that rotates the substrate, a processing liquid supply unit that supplies the processing liquid to the substrate, a collection cup disposed around the substrate to collect the processing liquid supplied to the substrate, and form an air stream that flows downward from an opening formed at a top of the collection cup through a periphery of an outside of the substrate, and a negative pressure generating unit which is provided at an inside of the collection cup and at an outside of the opening and generates a negative pressure which acts toward the outside of the substrate.

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.