Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part. The first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type.

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device capable of reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract: According to a data processing device for correcting an image signal which (i) is made up of plural pieces of pixel data and (ii) is externally supplied to a liquid crystal driving panel, a correction circuit includes an interpolation section for (i) obtaining first pixel data to be corrected and second pixel data which is for use in driving one of the plurality of data signal lines at timing earlier than timing at which the one of the plurality of data signal lines is driven in response to the first pixel data and (ii) correcting the first pixel data in accordance with a relationship between the second pixel data and the first pixel data. This provides a data processing device which can carry out a correction so that, in a case where a previously applied voltage have an effect on the charging states of respective pixels connected to a certain data signal line, such an effect is cancelled.

Abstract: In the present application are disclosed a method for enhancing or improving the flavor of foods or drinks in general with the use of a non-volatile thiazolidine compound alone or a non-volatile flavor compound and/or a reaction flavor concurrently with the non-volatile thiazolidine compound, a simple and effective method for improving the flavor of a retort food by suppressing the flavor-deterioration upon heat sterilization or the unpleasant odor at the time of eating, and a simple and effective method for improving the flavor of a soybean-incorporated food product by suppressing the unpleasant, weed-like odor peculiar to soybean.

Abstract: The present invention relates to a method for producing a cysteine-rich food material by maintaining a food material containing ?-glutamylcysteine at a ratio of at least 1 wt % to the solid content thereof at a temperature ranging from 50 to 120° C. and at a pH ranging from 1 to 7. This process is conducted in the absence of a sugar and in the presence of water. The present invention also relates to a method for producing a cysteine-rich food material by reacting the food material with a ?-glutamyl peptide hydrolase at a pH ranging from 3 to 9 and at a temperature ranging from 15 to 70° C. in the present of water. Further, the present invention relates to a method for producing a flavor-enhancing material for use in food, food products obtained by these processes, and yeast cells or extracts for use in food products.

Abstract: Disclosed in this application are a method for producing a food material containing cysteinylglycine at a high content, which comprises the step of (a) maintaining a starting food material containing glutathione in a ratio of 1% by weight or more based on the solid content at a temperature of 50 to 120° C. and a pH of 1 to 7 in the presence of water, or (b) treating the food material with a ?-glutamylpeptide hydrolase at a temperature of 15 to 70° C. and a pH of 3 to 9 in the presence of water, whereby a food material rich in cysteinylglycine is allowed to result, as well as a method for producing a food flavor (or savor) enhancer, which comprises the steps of (a) adding a sugar to cysteinylglycine or a food material containing cysteinylglycine in a ratio of 0.5% by weight or more based on the solid content, and (b) heating the resulting mixture at a temperature of 70 to 180° C.

Abstract: The object of the present invention is to provide Koji mold aminopeptidases capable of efficiently hydrolyzing persistent peptides and also genes encoding the aminopeptidases. The present invention provides Aspergillus nidulans aminopeptidase and nucleic acid molecules encoding it. In particular, the present invention provides a protein having an amino acid sequence represented by amino acid Nos. 1 to 519 in SEQ ID NO: 2, or a protein containing the substitution, deletion, insertion, addition or inversion of one or more amino acids in said sequence, and which protein has an activity of catalyzing the reaction for releasing an amino acid at an N-terminal of a peptide, and nucleic acid molecules encoding them.

Abstract: Herein is disclosed a flavor precursor composition comprising as an active ingredient a flavor precursor compound (flavor precursor compound A) in which a volatile flavor compound having a mercapto group in the molecule and a non-volatile compound having a mercapto group in the molecule are bound to form a disulfide structure, or a flavor precursor compound (flavor precursor compound B) which is an organic compound represented by Formula (1) shown below in which R1H is a non-volatile compound and R2H is a volatile compound having in the molecule a furan ring structure (including a structure where part or all of the carbon—carbon double bonds thereof are hydrogenated) or a thiophene ring structure (including a structure where part or all of the carbon—carbon double bonds thereof are hydrogenated), said Formula (1) being: R1—(S)n—R2 ??(1) which composition can preserve, and release, the flavor effectively and can be used in the fields of fragrances and foods.

Abstract: The present invention provides a process for preparing a solid pigment composition for pigment ink comprising the steps of (a) dissolving polyvinyl alcohol in water, and dispersing pigments in the resulting solution; (b) adding aldehyde derivatives to the resulting pigment dispersion and allowing the polyvinyl alcohol to react with the aldehyde derivatives to prepare polyvinyl acetal; and (c) drying the acetalated pigment dispersion. The pigment ink resulted from the process, employs water-soluble solvents (for example, alcohol solvent, glycol solvent or other non-toxic solvents), contains sufficient amount of pigments, has low concentration with good pigment dispersion and storage stability, and shows good writing or recording ability with improved color-development.

Abstract: An xDSL transceiver comprising a transmission unit for transmitting a DMT-modulated signal through a subscriber line as a transmission path and a receiving unit for receiving the DMT-modulated signal from the subscriber line. The xDSL transceiver further comprises an echo signal suppression unit for suppressing the echo signal from the transmission unit to the receiving unit by matching the phase between the frame of the transmission signal and the frame of the receiving signal.