Abstract: To provide a technology for performing surface treatment on rolling elements without leaving undyed portions or scratches. A rolling element jig that is a jig to be used when surface treatment is performed on a rolling element, the rolling element jig including a jig main body having a contact surface in contact with a surface of the rolling element, wherein the contact surface includes a first contact surface and a second contact surface that are disposed at opposite positions in the jig main body and support the rolling element at two points, and the first contact surface and the second contact surface are formed as curved surfaces.

Abstract: An apparatus for SIC single crystal has an induction heating control unit such that frequency f (Hz) of alternating current to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a crucible side wall by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SIC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1?T)×D2/R>1.5??(1) where, D1 is defined by Formula (2) and D2 by Formula (3): D1=503292×(1/(f×?c×?c))1/2??(2) D2=503292×(1/(f×?s×?s))1/2??(3); ?c is electric conductivity (S/m) of the sidewall, ?s is electric conductivity (S/m) of the SiC solution; ?c is relative permeability of the sidewall, and ?s is relative permeability of the SIC solution.

Abstract: A method of production of a SiC single crystal uses the solution method to prevent the formation of defects due to seed touch, i.e., causing a seed crystal to touch the melt, and thereby cause growth of a SiC single crystal reduced in defect density. According to the method, a SiC seed crystal touches a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal. The method includes making the SiC seed crystal touch the melt, and then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.

Abstract: This invention provides a method for manufacturing a nanocomposite thermoelectric conversion material in which phonon-scattering particles having a specific shape are dispersed, reducing thermal conductivity and increasing thermoelectric conversion performance.

Abstract: A manufacturing apparatus for SiC single crystal has a control unit to control induction heating such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a side wall of a crucible by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SiC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1?T)×D2/R>1??(1) where, D1 is defined by Formula (2), and D2 by Formula (3): D1=503292×(1/(f×?c×?c))1/2??(2) D2=503292×(1/(f×?s×?s))1/2??(3); ?c is electric conductivity (S/m) of the sidewall, ?s is electric conductivity (S/m) of the SiC solution; ?c is relative permeability of the sidewall, and ?s relative permeability of the SiC solution.

Abstract: The present invention provides a method of production of an SiC single crystal using the solution method which prevents the formation of defects due to seed tough, i.e., causing a seed crystal to touch the melt, and thereby causes growth of an Si single crystal reduced in defect density. The method of the present invention is a method of production of an SiC single crystal by causing an SiC seed crystal to touch a melt containing Si in a graphite crucible to thereby cause growth of the SiC single crystal on the SiC seed crystal, characterized by making the SiC seed crystal touch the melt, then making the melt rise in temperature once to a temperature higher than the temperature at the time of touch and also higher than the temperature for causing growth.

Abstract: 2'-Deoxy-3',5'-di-O-alkylcarbonyl-5-fluorouridine derivatives possessing strong anti-tumor activity with weak toxicity and represented by the general formula: ##STR1## wherein R stands for an alkyl group, an alkoxy group or a halogen atom, m for zero or an integer of 1-3, and n for an integer of 1-14, with the proviso that when m is 2 or 3, R's may be the same or different and that when m is 2 and the adjacent two R's are alkoxy groups, the two alkyl moieties of the alkoxy groups may be combined to form together with the two adjacent oxa bridging members an alkylenedioxy group as a whole. These derivatives are prepared by acylating a 2'-deoxy-3',5'-di-O-alkylcarbonyl-5-fluorouridine with corresponding benzoyl halides and are useful as active ingredients for anti-tumor agents, especially for oral administration.