Abstract: A method of forming an upper electrode in an organic electroluminescent element is provided. A first film made of a material for the upper electrode is formed on an organic functional layer by magnetron sputtering under a first condition. Thereafter, a second film made of the material for the upper electrode is formed on the first film by magnetron sputtering under a second condition different from the first condition. The second film has a lower film stress than the first film.

Abstract: An organic EL element is provided having a pair of electrodes and an organic functional layer disposed therebetween, the pair of electrodes consisting of an upper electrode and a lower electrode. In the pair of electrodes, the upper electrode includes a first layer and a second layer, the first layer being in contact with the organic functional layer and the second layer being in contact with the first layer. Additionally, the first layer has a higher membrane stress than the organic functional layer and the second layer. Furthermore, the first layer has a crystalline structure and the second layer has a non-crystalline structure.

Abstract: An organic EL element is provided having a pair of electrodes and an organic functional layer disposed therebetween, the pair of electrodes consisting of an upper electrode and a lower electrode. In the pair of electrodes, the upper electrode includes a first layer and a second layer, the first layer being in contact with the organic functional layer and the second layer being in contact with the first layer. Additionally, the first layer has a higher membrane stress than the organic functional layer and the second layer. Furthermore, the first layer has a crystalline structure and the second layer has a non-crystalline structure.

Abstract: A method of manufacturing an organic EL element includes: a first step of forming a lower electrode on a substrate; a second step of forming an organic functional layer on the lower electrode; and a third step of forming an upper electrode on the organic functional layer, wherein the third step includes: a first film-forming step of forming a thin film on the organic functional layer by magnetron sputtering, the thin film being formed of material of the upper electrode; and a second film-forming step of forming, after the first film-forming step, another thin film by a film-forming process different from the magnetron sputtering on the thin film formed in the first film-forming step, said another thin film being formed of the material of the upper electrode.

Abstract: Forming an upper electrode included in an organic electroluminescent element includes: forming a first film made of a material for the upper electrode on an organic functional layer by magnetron sputtering under a first condition; and forming a second film made of the material for the upper electrode on the first film by magnetron sputtering under a second condition different from the first condition, the second film having a lower film stress than the first film.

Abstract: A method of manufacturing an organic EL element includes: a first step of forming a lower electrode on a substrate; a second step of forming an organic functional layer on the lower electrode; and a third step of forming an upper electrode on the organic functional layer, wherein the third step includes: a first film-forming step of forming a thin film on the organic functional layer by magnetron sputtering, the thin film being formed of material of the upper electrode; and a second film-forming step of forming, after the first film-forming step, another thin film by a film-forming process different from the magnetron sputtering on the thin film formed in the first film-forming step, said another thin film being formed of the material of the upper electrode.

Abstract: Disclosed is an organic electroluminescent element including: a substrate; and a positive electrode, an organic light-emitting layer, and a laminated negative electrode of two or more layers including a lower negative electrode and an upper negative electrode having different specific resistances from each other, the positive electrode, organic light-emitting layer, and laminated negative electrode sequentially provided on the substrate from the substrate side, and in the organic electroluminescent element, the lower negative electrode and the upper negative electrode include any one of ITO, IZO, GZO, and AZO as the main constituent, and the lower negative electrode is provided closer to the organic light-emitting layer than the upper negative electrode, and the lower negative electrode has a specific resistance higher than the specific resistance of the upper negative electrode adjacent to the lower negative electrode.

Abstract: A plasma processing method capable of processing an object with fine linear portions. The method employs a plate-shaped insulator that is disposed adjacent to a plate-shaped electrode. In the method, a discharge gas containing an inert gas is supplied to a vicinity of an object to be processed from one gas exhaust port located near the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed adjacent the plate-shaped electrode. The exhaust ports are formed on opposite sides of the plate-shaped insulator and are different in distance to the plate-shaped electrode. A discharge control gas is supplied from the other gas exhaust port to the vicinity of the object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the object, by which plasma processing of the processing object is carried out.

Abstract: A plasma processing method includes exhausting the interior of a vacuum chamber while supplying gas into the vacuum chamber while maintaining the interior of the vacuum chamber at a desired pressure. A high-frequency power of 100 kHz to 100 MHz is applied to a coil provided in the vicinity of a dielectric window which faces a substrate placed on a substrate electrode in the vacuum. Plasma is generated in the vacuum chamber to process the substrate or a film on the substrate. Particles which tend to move straight from a surface of the substrate or from a surface of the film on the substrate toward a wall surface of the dielectric window inside the vacuum chamber are kept interrupted by a metal plate.

Abstract: In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed around the plate-shaped electrode and which are formed so as to be surrounded by the plate-shaped insulator and moreover which are different in distance to the plate-shaped electrode from each other, while a discharge control gas is supplied from the other gas exhaust port to the vicinity of the processing object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the processing object, by which plasma processing of the processing object is carried out. Thus, plasma processing method and apparatus capable of processing for desired fine linear portions with high precision are provided.

Abstract: In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed around the plate-shaped electrode and which are formed so as to be surrounded by the plate-shaped insulator and moreover which are different in distance to the plate-shaped electrode from each other, while a discharge control gas is supplied from the other gas exhaust port to the vicinity of the processing object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the processing object, by which plasma processing of the processing object is carried out. Thus, plasma processing method and apparatus capable of processing for desired fine linear portions with high precision are provided.

Abstract: Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, making activated particles emitted from an opening of the microplasma source joined to the space act on the object, and forming a fine linear portion on the object. The fine linear portion is formed on the object while flowing the gas to the neighborhood of the opening along the lengthwise direction of the fine linear portion parallel to the object.

Abstract: Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, making activated particles emitted from an opening of the microplasma source joined to the space act on the object, and forming a fine linear portion on the object. The fine linear portion is formed on the object while flowing the gas to the neighborhood of the opening along the lengthwise direction of the fine linear portion parallel to the object.

Abstract: A plasma processing method includes exhausting the interior of a vacuum chamber while supplying gas into the vacuum chamber, and while maintaining the interior of the chamber at a desired pressure. A high-frequency power of 100 kHz to 100 MHz is applied to a coil provided in the vicinity of a dielectric window provided so as to face a substrate placed on a substrate electrode in the vacuum Thus, plasma is generated in the vacuum chamber to process the substrate or a film on the substrate by the generated plasma while particles which tend to move straight from a surface of the substrate or from a surface of the film on the substrate toward a wall surface of the dielectric window inside the vacuum chamber are kept interrupted by a metal plate.

Abstract: A plasma processing method includes exhausting the interior of a vacuum chamber while supplying gas into the vacuum chamber, and while maintaining the interior of the vacuum chamber at a desired pressure. A high-frequency power of 100 kHz to 100 MHz is applied to a coil provided in the vicinity of a dielectric window provided so as to face a substrate placed on a substrate electrode in the vacuum Thus, plasma is generated in the vacuum chamber to process the substrate or a film on the substrate by the generated plasma while particles which tend to move straight from a surface of the substrate or from a surface of the film on the substrate toward a wall surface of the dielectric window inside the vacuum chamber are kept interrupted by a metal plate.

Abstract: In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed around the plate-shaped electrode and which are formed so as to be surrounded by the plate-shaped insulator and moreover which are different in distance to the plate-shaped electrode from each other, while a discharge control gas is supplied from the other gas exhaust port to the vicinity of the processing object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the processing object, by which plasma processing of the processing object is carried out. Thus, plasma processing method and apparatus capable of processing for desired fine linear portions with high precision are provided.

Abstract: Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, making activated particles emitted from an opening of the microplasma source joined to the space act on the object, and forming a fine linear portion on the object. The fine linear portion is formed on the object while flowing the gas to the neighborhood of the opening along the lengthwise direction of the fine linear portion parallel to the object.

Abstract: A plasma processing method includes exhausting interior of a vacuum chamber while supplying gas into the vacuum chamber, and while controlling the interior of the vacuum chamber to a pressure, applying a high-frequency power of 100 kHz to 100 MHz to a coil provided in a vicinity of a dielectric window provided so as to face a substrate placed on a substrate electrode in the vacuum chamber, and thus generating plasma in the vacuum chamber to process the substrate or a film on the substrate by the generated plasma while particles which tend to move straight from a surface of the substrate or from a surface of the film on the substrate toward a wall surface of the dielectric window inside the vacuum chamber are kept interrupted by a metal plate.