Patents by Inventor Yoko Iwakaji
Yoko Iwakaji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11715776Abstract: According to an embodiment a semiconductor device includes a semiconductor layer including first trenches and second trenches, a first gate electrode in the first trench, a second gate electrode in the second trench, a first gate electrode pad, a second gate electrode pad, a first wiring connecting the first gate electrode pad and the first gate electrode, and a second wiring connecting the second gate electrode pad and the second gate electrode. The semiconductor layer includes a first connection trench. Two first trenches adjacent to each other are connected to each other at end portions by the first connection trench. At least one of the second trenches is provided between the two first trenches. The second gate electrode in the at least one second trench is electrically connected to the second wiring between the two first trenches.Type: GrantFiled: June 4, 2021Date of Patent: August 1, 2023Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Yoko Iwakaji, Tomoko Matsudai, Keiko Kawamura
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Publication number: 20230170405Abstract: A semiconductor device includes a semiconductor part having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the second surface, first to third control electrodes between the first electrode and the semiconductor part. The first to third control electrodes are biased independently from each other. The semiconductor part includes a first layer of a first-conductivity-type, a second layer of a second-conductivity-type, a third layer of the first-conductivity-type and the fourth layer of the second-conductivity-type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The second layer opposes the first to third control electrode with insulating films interposed.Type: ApplicationFiled: January 26, 2023Publication date: June 1, 2023Applicants: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Tomoko Matsudai, Yoko Iwakaji, Takeshi Suwa
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Publication number: 20230121970Abstract: A semiconductor device includes a semiconductor part, a first electrode at a back surface of the semiconductor part; a second electrode at a front surface of the semiconductor part; third and fourth electrodes provided between the semiconductor part and the second electrode. The third and fourth electrodes are arranged in a first direction along the front surface of the semiconductor part. The third electrode is electrically insulated from the semiconductor part by a first insulating film. The third electrode is electrically insulated from the second electrode by a second insulating film. The fourth electrode is electrically insulated from the semiconductor part by a third insulating film. The fourth electrode is electrically isolated from the third electrode. the third and fourth electrodes extend into the semiconductor part. The fourth electrode includes a material having a larger thermal conductivity than a thermal conductivity of a material of the third electrode.Type: ApplicationFiled: December 14, 2022Publication date: April 20, 2023Applicants: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage CorporationInventors: Takeshi Suwa, Tomoko Matsudai, Yoko Iwakaji
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Publication number: 20230086935Abstract: A semiconductor device includes: a first electrode; a first semiconductor layer of first conductivity type provided on the first electrode; a second semiconductor layer of second conductivity type provided on the first semiconductor layer; a second electrode provided on the second semiconductor layer; a first trench reaching the first semiconductor layer from the second semiconductor layer; a first semiconductor region provided in the second semiconductor layer, the first semiconductor region being in contact with the first trench and the first semiconductor region having a higher concentration of impurities of second conductivity type than the second semiconductor layer; and a first insulating film provided in the second semiconductor layer and the first insulating film being in contact with the first semiconductor region.Type: ApplicationFiled: March 4, 2022Publication date: March 23, 2023Inventors: Kaori FUSE, Keiko KAWAMURA, Takako MOTAI, Tomoko MATSUDAI, Yoko IWAKAJI
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Publication number: 20230078785Abstract: A semiconductor device includes a semiconductor part, first and second electrodes and a control electrode. The semiconductor part is provided between the first and second electrode. The semiconductor part includes first and third layers of a first conductivity type, and second, fourth and fifth layers of a second conductivity type. The first layer extends between the first and second electrodes. The second layer is provided between the first layer and the second electrode. The third semiconductor layer is provided between the second layer and the second electrode. The fourth layer is provided between the first layer and the first electrode. The semiconductor part includes an active region and a termination region. The active region includes the control electrode, the second layer, and the third layer. The termination region surrounds the active region. The fifth layer is provided in the first layer in the termination region.Type: ApplicationFiled: January 24, 2022Publication date: March 16, 2023Inventors: Takako MOTAI, Tomoko MATSUDAI, Yoko IWAKAJI, Hiroko ITOKAZU, Kaori FUSE, Keiko KAWAMURA, Kohei OASA
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Publication number: 20230068786Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.Type: ApplicationFiled: October 20, 2022Publication date: March 2, 2023Inventors: Hiroko Itokazu, Tomoko Matsudai, Yoko Iwakaji, Takako Motai
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Patent number: 11594622Abstract: A semiconductor device includes a semiconductor part having a first surface and a second surface opposite to the first surface, a first electrode on the first surface, a second electrode on the second surface, first to third control electrodes between the first electrode and the semiconductor part. The first to third control electrodes are biased independently from each other. The semiconductor part includes a first layer of a first-conductivity-type, a second layer of a second-conductivity-type, a third layer of the first-conductivity-type and the fourth layer of the second-conductivity-type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The second layer opposes the first to third control electrode with insulating films interposed.Type: GrantFiled: July 23, 2021Date of Patent: February 28, 2023Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Tomoko Matsudai, Yoko Iwakaji, Takeshi Suwa
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Patent number: 11575031Abstract: A semiconductor element includes a semiconductor part, first to third electrodes and a control electrode. The first electrode is provided at a front side of the semiconductor part. The second and third electrodes are provided at a back side of the semiconductor part. The control electrode is provided between the semiconductor part and the first electrode. The semiconductor part includes first and third layers of a first conductivity type and second and fourth layers of a second conductivity type. The first layer is provided between the first and second electrodes and between the first and third electrodes. The first layer is connected to the third electrode at the back side. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the second electrode and the first layer.Type: GrantFiled: March 15, 2021Date of Patent: February 7, 2023Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Yoko Iwakaji, Tomoko Matsudai, Hiroko Itokazu, Keiko Kawamura, Kaori Fuse, Takako Motai
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Publication number: 20230031686Abstract: A semiconductor device according to an embodiment includes a first trench, a first gate electrode in the first trench, a second trench, a second gate electrode provided in the second trench, a third trench, a third gate electrode in the third trench, a first electrode pad electrically connected to the first gate electrode, a second electrode pad electrically connected to the second gate electrode, and a third electrode pad electrically connected to the third gate electrode, in which a thickness of a conductive semiconductor region opposed to the third gate electrode is smaller than a thickness of a conductive semiconductor region opposed to the first gate electrode, and in which the thickness of the conductive semiconductor region opposed to the third gate electrode is smaller than a thickness of a conductive type semiconductor region opposed to the second gate electrode.Type: ApplicationFiled: September 6, 2022Publication date: February 2, 2023Inventors: Yoko IWAKAJI, Tomoko MATSUDAI, Ryohei GEJO
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Patent number: 11563113Abstract: A semiconductor device includes a semiconductor layer having first and second surfaces, a first electrode and a first gate electrode along the first surface, and a second electrode and a second gate electrode along the second surface. The layer includes a first type first region, a second type second region between the first region and the first surface and facing the first gate electrode, a first type third region between the second region and the first surface and contacting the first electrode, a second type fourth region between the first region and the second surface, facing the second gate electrode, and contacting the second electrode, and a first type fifth region between the fourth region and the second surface and contacting the second electrode. Transistors including the first and second gate electrodes have different threshold voltages that are both positive or negative.Type: GrantFiled: March 3, 2021Date of Patent: January 24, 2023Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Tomoko Matsudai, Yoko Iwakaji, Hiroko Itokazu
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Patent number: 11563094Abstract: A semiconductor device includes a semiconductor part, a first electrode at a back surface of the semiconductor part; a second electrode at a front surface of the semiconductor part; third and fourth electrodes provided between the semiconductor part and the second electrode. The third and fourth electrodes are arranged in a first direction along the front surface of the semiconductor part. The third electrode is electrically insulated from the semiconductor part by a first insulating film. The third electrode is electrically insulated from the second electrode by a second insulating film. The fourth electrode is electrically insulated from the semiconductor part by a third insulating film. The fourth electrode is electrically isolated from the third electrode. the third and fourth electrodes extend into the semiconductor part. The fourth electrode includes a material having a larger thermal conductivity than a thermal conductivity of a material of the third electrode.Type: GrantFiled: March 9, 2020Date of Patent: January 24, 2023Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Takeshi Suwa, Tomoko Matsudai, Yoko Iwakaji
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Patent number: 11538929Abstract: A semiconductor device includes first and third semiconductor layers of a first conductivity type, and second, fourth and fifth semiconductor layers of a second conductivity type. The first semiconductor layer is provided on the fifth semiconductor layer. The second semiconductor layer is provided on the first semiconductor layer. The third and fourth semiconductor layers are arranged along the second semiconductor layer. In a plane parallel to an upper surface of the second semiconductor layer, the fourth semiconductor layer has a surface area greater than a surface area of the third semiconductor layer. The device further includes first to third electrodes, and first control electrode. The first to third electrodes are electrically connected to the third to fifth semiconductor layers, respectively. The first control electrode is provided in a first trench extending into the first semiconductor layer from an upper surface of the third semiconductor layer.Type: GrantFiled: February 8, 2021Date of Patent: December 27, 2022Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Takeshi Suwa, Tomoko Matsudai, Yoko Iwakaji, Hiroko Itokazu, Takako Motai
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Patent number: 11532704Abstract: A semiconductor device has a cell part and a terminal part set in the device. The terminal part encloses the cell part. The semiconductor device includes a first electrode, a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type, and an insulating layer. The first semiconductor layer is formed above the first electrode. The second semiconductor layer is provided in an upper portion of the first semiconductor layer, and has an impurity concentration profile along a vertical direction including a plurality of peaks. The insulating layer is provided on the second semiconductor layer.Type: GrantFiled: July 29, 2020Date of Patent: December 20, 2022Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Keiko Kawamura, Tomoko Matsudai, Yoko Iwakaji, Kaori Fuse
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Patent number: 11502074Abstract: A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The control electrode is provided in a trench of the semiconductor part between the semiconductor part and the second electrode. The semiconductor part includes first to third layers. The first layer of a first conductivity type extends between the first and second electrodes. The second layer of a second conductivity type is provided between the first layer and the second electrode. The second layer is connected to the second electrode. The third layer of the second conductivity type is provided between the second layer and the control electrode. The third layer includes a second-conductivity-type impurity with a higher concentration than a second-conductivity-type impurity of the second layer. The third layer contacts the second electrode, and is electrically connected to the second electrode.Type: GrantFiled: August 6, 2020Date of Patent: November 15, 2022Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Hiroko Itokazu, Tomoko Matsudai, Yoko Iwakaji, Takako Motai
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Publication number: 20220328666Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a fifth semiconductor region, a first gate electrode, and a second gate electrode. The first gate electrode faces the second semiconductor region via a first insulating film. The second gate electrode faces the second semiconductor region via a second insulating film and faces the second electrode via a third insulating film contacting the second insulating film. The fifth semiconductor region includes a boundary portion that electrically contacts the second electrode. A distance between an upper surface of the fourth semiconductor region and the first electrode is greater than a distance between the boundary portion and the first electrode.Type: ApplicationFiled: September 7, 2021Publication date: October 13, 2022Inventors: Yoko Iwakaji, Tomoko Matsudai, Hiroko Itokazu, Keiko Kawamura
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Publication number: 20220302252Abstract: A semiconductor device of embodiments includes: a transistor region including a semiconductor layer having a first face and a second face opposite to the first face, a first transistor having a first gate electrode provided on a first face side of the semiconductor layer, and a second transistor having a second gate electrode provided on a second face side of the semiconductor layer; and an adjacent region adjacent to the transistor region and including the semiconductor layer and a third transistor having a third gate electrode electrically connected to the second gate electrode and provided on the second face side of the semiconductor layer and the third transistor having an absolute value of a threshold voltage smaller than an absolute value of a threshold voltage of the second transistor.Type: ApplicationFiled: September 10, 2021Publication date: September 22, 2022Inventors: Tomoko MATSUDAI, Yoko IWAKAJI
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Publication number: 20220301982Abstract: A semiconductor device according to an embodiment includes: a first trench and a second trench extending in a first direction; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate wire including a first portion extending in a second direction perpendicular to the first direction and a third portion extending in the second direction; a second gate wire including a first portion extending in the second direction and a third portion extending in the second direction; a first gate electrode pad; and a second gate electrode pad. The first portion of the second gate wire is between the first portion and the third portion of the first gate wire, and the third portion of the first gate wire is between the first portion and the third portion of the second gate wire.Type: ApplicationFiled: September 10, 2021Publication date: September 22, 2022Inventors: Hiroko ITOKAZU, Tomoko MATSUDAI, Yoko IWAKAJI, Keiko KAWAMURA
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Publication number: 20220302288Abstract: This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.Type: ApplicationFiled: September 13, 2021Publication date: September 22, 2022Inventors: Norio YASUHARA, Yoko IWAKAJI, Yusuke KAWAGUCHI, Daiki YOSHIKAWA, Kenichi MATSUSHITA, Shoko HANAGATA, Tomoko MATSUDAI, Hiroko ITOKAZU, Keiko KAWAMURA
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Publication number: 20220293592Abstract: A semiconductor device of embodiments includes: a semiconductor layer including a first trench, a second trench, a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type provided between a first face and the first semiconductor region, between the first trench and the second trench, and in contact with the second trench, a third semiconductor region of a first conductive type provided between the first trench and the second semiconductor region, a fourth semiconductor region of a second conductive type provided between the third semiconductor region and the first face, and a fifth semiconductor region of a second conductive type provided between the second semiconductor region and the first face, spaced from the fourth semiconductor region, in contact with the second trench; a first electrode on a first face side; and a second electrode on a second face side.Type: ApplicationFiled: September 13, 2021Publication date: September 15, 2022Inventors: Tomoko MATSUDAI, Yoko IWAKAJI, Hiroko ITOKAZU
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Publication number: 20220293778Abstract: A semiconductor device includes: a first electrode; a first semiconductor layer located on the first electrode in a diode region; a second semiconductor layer located on the first electrode in an IGBT region; a third semiconductor layer located in the diode region, the boundary region, and the IGBT region and positioned on the first semiconductor layer and the second semiconductor layer; a fourth semiconductor layer located on the third semiconductor layer in the boundary region and the IGBT region; a fifth semiconductor layer located on the third semiconductor layer and the fourth semiconductor layer; a second electrode located in the diode region; a third electrode located in the IGBT region; and a fourth electrode extending from an upper surface of the fifth semiconductor layer toward the third semiconductor layer in the boundary region and electrically insulated from the third electrode.Type: ApplicationFiled: September 9, 2021Publication date: September 15, 2022Inventors: Yoko IWAKAJI, Tomoko MATSUDAI